SPICE MODEL: MMDT2907V MMDT2907V Lead-free Green NEW PRODUCT DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMDT2222V) A Ultra-Small Surface Mount Package SOT-563 Lead Free By Design/RoHS Compliant (Note 1) B C "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability D Mechanical Data · · · · · · · · G Dim Min Max Typ A 0.15 0.30 0.25 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D Case: SOT-563, Molded Plastic Case Material: Molded Plastic, "Green" Molding Compound, UL Flammability Classification Rating 94V-0 M K Moisture sensitivity: Level 1 per J-STD-020C H Terminal Connections: See Diagram L Terminals: Finish ¾ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.56 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 ¾ All Dimensions in mm Marking & Type Code Information: See Last Page C1 B2 E2 E1 B1 C2 Ordering Information: See Last Page Weight: 0.003 grams (approx.) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5.0 V IC -600 mA Tj, TSTG -55 to +150 °C Symbol Value Unit Pd 150 mW RqJA 833 °C/W Collector Current - Continuous Operating and Storage and Temperature Range Thermal Characteristics @ TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30564 Rev. 4 - 2 1 of 4 www.diodes.com MMDT2907V ã Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -60 ¾ V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 ¾ V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -10mA, IC = 0 OFF CHARACTERISTICS (Note 4) Collector Cutoff Current ICBO ¾ -10 nA mA VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125°C Collector Cutoff Current ICEX ¾ -50 nA VCE = -30V, VEB(OFF) = -0.5V IBL ¾ -50 nA VCE = -30V, VEB(OFF) = -0.5V hFE 75 100 100 100 50 ¾ ¾ ¾ 300 ¾ ¾ IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.4 -1.6 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) ¾ -1.3 -2.6 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo ¾ 8.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo — 30 pF VEB = -2.0V, f = 1.0MHz, IC = 0 fT 200 ¾ MHz Turn-On Time toff ¾ 45 ns Delay Time td ¾ 10 ns Rise Time tr ¾ 40 ns Turn-Off Time toff ¾ 100 ns Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain -10V -10V -10V -10V -10V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -20V, IC = -50mA, f = 100MHz SWITCHING CHARACTERISTICS Notes: VCC = -30V, IC = -150mA, IB1 = -15mA 4. Short duration test pulse used to minimize self-heating effect. DS30564 Rev. 4 - 2 2 of 4 www.diodes.com MMDT2907V 30 200 CT, CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) 35 150 100 25 20 Cibo 15 10 Cobo 50 5 0 0 -50 0 50 100 150 0 2 6 8 10 12 14 16 18 20 -0.6 -1.6 IC = -300mA IC = -10mA VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) -1.4 IC = -100mA -1.2 4 VR, REVERSE VOLTS (V) Fig. 2 Typical Capacitance Characteristics TA, AMBIENT TEMPERATURE (° C) Fig. 1, Derating Curve - Total VCE, COLLECTOR-EMITTER VOLTAGE (V) NEW PRODUCT 250 IC = -1mA IC = -30mA -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.001 IC = 10 IB -0.5 -0.4 -0.3 TA = 150°C TA = 25°C -0.2 -0.1 TA = -50°C 0 -0.01 -0.1 -1 -100 -10 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region DS30564 Rev. 4 - 2 3 of 4 www.diodes.com -1 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Collector Emitter Saturation Voltage vs. Collector Current MMDT2907V -1.0 TA = 150°C hFE, DC CURRENT GAIN (NORMALIZED) VCE = -5V VBE(ON), BASE EMITTER VOLTAGE (V) VCE = -5V 100 TA = 25°C TA = -50°C 10 -0.9 TA = -50°C -0.8 -0.7 -0.6 TA = 25°C -0.5 -0.4 TA = 150°C -0.3 -0.2 1 -10 -1 -100 -0.1 -1000 IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs Collector Current -10 -1 -100 IC, COLLECTOR CURRENT (mA) Fig. 6, Base Emitter Voltage vs. Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) NEW PRODUCT 1000 VCE = -5V 100 10 1 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs. Collector Current Ordering Information Notes: (Note 5) Device Packaging Shipping MMDT2907V-7 SOT-563 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KAU = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September KAU YM Date Code Key Year 2004 2005 2006 2007 2008 2009 Code R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30564 Rev. 4 - 2 4 of 4 www.diodes.com MMDT2907V