MMVL409T1 Preferred Device Silicon Tuning Diode These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Surface Mount Package • Device Marking: X5 http://onsemi.com VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 20 Vdc IF Peak Forward Current 200 mAdc Max Unit 1 2 THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C 200 mW 1.57 mW/°C Thermal Resistance Junction to Ambient 635 °C/W Junction and Storage Temperature 150 °C PLASTIC SOD–323 CASE 477 *FR–4 Minimum Pad 1 CATHODE 2 ANODE ORDERING INFORMATION Device MMVL409T1 Package Shipping SOD–323 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 January, 2000 – Rev. 1 1 Publication Order Number: MMVL409T1/D MMVL409T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Symbol Min Typ Max Unit V(BR)R 20 — — Vdc IR — — 0.1 µAdc TCC — 300 — ppm/°C Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMVL409T1 Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min Nom Max Min Min Max 26 29 32 200 1.5 1.9 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc. TYPICAL CHARACTERISTICS 1000 32 Q, FIGURE OF MERIT C T, DIODE CAPACITANCE (pF) 40 f = 1.0 MHz TA = 25°C 24 16 100 8 0 1 2 3 10 20 30 100 1000 f, FREQUENCY (MHz) Figure 1. Diode Capacitance Figure 2. Figure of Merit C t , DIODE CAPACITANCE (NORMALIZED) VR = 15 Vdc 2.0 1.0 0.6 0.2 0.1 0.06 0.02 0.01 0.006 -40 10 VR, REVERSE VOLTAGE (VOLTS) 20 10 6.0 0.002 0.001 -60 10 100 100 60 I R , REVERSE CURRENT (nA) VR = 3 Vdc TA = 25°C -20 0 +20 +40 +60 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 +80 +100 +120 +140 VR = 3.0 Vdc f = 1.0 MHz TA, AMBIENT TEMPERATURE (°C) -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (°C) Figure 3. Leakage Current Figure 4. Diode Capacitance http://onsemi.com 2 +100 +125 MMVL409T1 PACKAGE DIMENSIONS SOD–323 PLASTIC PACKAGE CASE 477–02 ISSUE A K A D 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. B DIM A B C D E H J K E C J MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE H NOTE 3 0.63mm 0.025 1.60mm 0.063 2.85mm 0.112 mm inches SOD–323 Soldering Footprint http://onsemi.com 3 0.83mm 0.033 MMVL409T1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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