MMVL809T1 Silicon Tuning Diode This device is designed for 900 MHz frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • • • • http://onsemi.com Controlled and Uniform Tuning Ratio Surface Mount Package Available in 8 mm Tape and Reel Pb−Free Package is Available 4.5 − 6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Rating Symbol Value Continuous Reverse Voltage VR 20 Vdc Peak Forward Current IF 20 mAdc 1 CATHODE Unit 2 ANODE 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit 200 1.57 mW mW/°C RqJA 635 °C/W TJ, Tstg 150 °C 1 PD PLASTIC SOD−323 CASE 477 STYLE 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad MARKING DIAGRAM 5K M G G 5K = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMVL809T1 SOD−323 3000 / Tape & Reel MMVL809T1G SOD−323 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 2 1 Publication Order Number: MMVL809T1/D MMVL809T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Reverse Breakdown Voltage (IR = 10 mAdc) Symbol Min Typ Max Unit V(BR)R 20 − − Vdc IR − − 50 nAdc Reverse Voltage Leakage Current (VR = 15 Vdc) Ct, Diode Capacitance VR = 2.0 Vdc, f = 1.0 MHz pF Device MMVL809T1 Q, Figure of Merit VR = 3.0 Vdc f = 500 MHz CR, Capacitance Ratio C2/C8 (Note 2) f = 1.0 MHz Min Typ Max Typ Min Max 4.5 5.3 6.1 75 1.8 2.6 2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc. TYPICAL CHARACTERISTICS 10 1000 CT , DIODE CAPACITANCE (pF) 9 Q, FIGURE OF MERIT 8 7 6 5 4 3 VR = 3 Vdc TA = 25°C 100 2 1 0 0.5 1 2 3 4 5 8 10 10 0.1 15 f, FREQUENCY (GHz) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT , DIODE CAPACITANCE (NORMALIZED) R S , SERIES RESISTANCE (MHz) VR = 3.0 Vdc f = 1.0 MHz 800 600 0 10 VR, REVERSE VOLTAGE (VOLTS) 1000 400 1.0 0.2 0.4 0.6 0.8 1.0 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 −75 1.2 VR = 3.0 Vdc f = 1.0 MHz f, FREQUENCY (GHz) −50 −25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (°C) Figure 3. Series Resistance Figure 4. Diode Capacitance http://onsemi.com 2 +100 +125 MMVL809T1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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