MMVL105GT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ratio • Device Marking: 4E http://onsemi.com 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 30 Vdc IF Peak Forward Current 200 mAdc 1 THERMAL CHARACTERISTICS Symbol PD RqJA TJ, Tstg Characteristic Max Unit 2 PLASTIC SOD–323 CASE 477 Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C 200 mW 1.57 mW/°C Thermal Resistance Junction to Ambient 635 °C/W Junction and Storage Temperature 150 °C *FR–4 Minimum Pad 1 CATHODE 2 ANODE ORDERING INFORMATION Device Package Shipping MMVL105GT1 SOD–323 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 January, 2000 – Rev. 1 1 Publication Order Number: MMVL105GT1/D MMVL105GT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Min Typ Max Unit V(BR)R 30 — Vdc IR — 50 nAdc Reverse Voltage Leakage Current (VR = 28 Vdc) CT VR = 25 Vdc, f = 1.0 MHz pF Device Type MMVL105GT1 Q VR = 3.0 Vdc f = 50 MHz CR C3/C25 f = 1.0 MHz Min Max Typ Min Max 1.5 2.8 250 4.0 6.5 TYPICAL CHARACTERISTICS 20 1000 Q, FIGURE OF MERIT 14 12 10 8.0 6.0 f = 1.0 MHz TA = 25°C 4.0 VR = 3 Vdc TA = 25°C 100 2.0 0 0.3 0.5 1.0 2.0 3.0 10 5.0 10 20 30 10 100 VR, REVERSE VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT , DIODE CAPACITANCE (NORMALIZED) CT , DIODE CAPACITANCE (pF) 18 16 1.04 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 –75 –50 –25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (°C) Figure 3. Diode Capacitance http://onsemi.com 2 +100 +125 1000 MMVL105GT1 PACKAGE DIMENSIONS SOD–323 PLASTIC PACKAGE CASE 477–02 ISSUE A K A D 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. B DIM A B C D E H J K E C J MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE H NOTE 3 0.63 mm 0.025ȀȀ 1.60 mm 0.063ȀȀ 2.85 mm 0.112ȀȀ ǒ mm Ǔ inches SOD–323 Soldering Footprint http://onsemi.com 3 0.83 mm 0.033ȀȀ MMVL105GT1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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