DTC114EXV3T1 Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SC−89 package which is designed for low power surface mount applications. • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape & Reel Lead−Free Solder Plating (Pure Sn) http://onsemi.com NPN SILICON DIGITAL TRANSISTORS PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current 3 2 1 SC−89 CASE 463C STYLE 1 MARKING DIAGRAM 3 xx D 1 2 xx = Specific Device Code (See Marking Table on page 2) D = Date Code Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 0 1 Publication Order Number: DTC114EXV3T1/D DTC114EXV3T1 Series DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping† DTC114EXV3T1 DTC124EXV3T1 DTC144EXV3T1 DTC114YXV3T1 DTC114TXV3T1 DTC143TXV3T1 8A 8B 8C 8D 94 8F 10 22 47 10 10 4.7 10 22 47 47 ∞ ∞ 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25°C Derate above 25°C Max Unit 200 1.6 mW mW/°C 600 °C/W 300 2.4 mW mW/°C RθJA 400 °C/W TJ, Tstg −55 to +150 °C PD Thermal Resistance, Junction−to−Ambient (Note 1) RθJA Total Device Dissipation, FR−4 Board (Note 2) @ TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 × 1.0 Inch Pad. http://onsemi.com 2 DTC114EXV3T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 mAdc Collector−Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 60 100 140 140 350 350 − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 10 22 47 10 10 4.7 13 28.6 61.1 13 13 6.1 kΩ R1/R2 0.8 1.0 1.2 0.17 − 0.21 − 0.25 − OFF CHARACTERISTICS DTC114EXV3T1 DTC124EXV3T1 DTC144EXV3T1 DTC114YXV3T1 DTC114TXV3T1 DTC143TXV3T1 ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTC114EXV3T1 DTC124EXV3T1 DTC144EXV3T1 DTC114YXV3T1 DTC114TXV3T1 DTC143TXV3T1 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 1.0 mA) DTC143TXV3T1/DTC114TXV3T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) VOL DTC114EXV3T1 DTC124EXV3T1 DTC114YXV3T1 DTC114TXV3T1 DTC143TXV3T1 DTC144EXV3T1 Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) DTC143TXV3T1 DTC114TXV3T1 Input Resistor DTC114EXV3T1 DTC124EXV3T1 DTC144EXV3T1 DTC114YXV3T1 DTC114TXV3T1 DTC143TXV3T1 Resistor Ratio DTC114EXV3T1/DTC124EXV3T1/ DTC144EXV3T1 DTC114YXV3T1 DTC143TXV3T1/DTC114TXV3T1 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. http://onsemi.com 3 Vdc Vdc DTC114EXV3T1 Series PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 RθJA = 600°C/W 0 −50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 1. Derating Curve 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 Figure 2. Normalized Thermal Response http://onsemi.com 4 10 100 1000 DTC114EXV3T1 Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTC114EXV3T1 TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 25°C −25°C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 3. VCE(sat) versus IC Figure 4. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C TA=−25°C 10 1 0.1 0.01 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 9 Figure 6. Output Current versus Input Voltage Figure 5. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 7. Input Voltage versus Output Current http://onsemi.com 5 50 10 DTC114EXV3T1 Series 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTC124EXV3T1 IC/IB = 10 25°C TA=−25°C 0.1 75°C 0.01 0.001 0 20 −25°C 100 1 100 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. VCE(sat) versus IC Figure 9. DC Current Gain 4 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 2 1 75°C 25°C TA=−25°C 10 1 0.1 0.01 VO = 5 V 0 0 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 10. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 11. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75°C 25°C 10 50 40 VCE = 10 V 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 12. Input Voltage versus Output Current http://onsemi.com 6 DTC114EXV3T1 Series 10 1000 IC/IB = 10 1 25°C TA=−25°C 0.01 0 25°C −25°C 10 50 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 100 75°C 0.1 VCE = 10 V hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTC144EXV3T1 10 IC, COLLECTOR CURRENT (mA) 1 Figure 13. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=−25°C 10 1 0.1 0.01 0.2 0 25°C 75°C 0.6 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) VO = 5 V 0.001 50 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 16. Output Current versus Input Voltage Figure 15. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) Figure 14. DC Current Gain f = 1 MHz IE = 0 V TA = 25°C 0.8 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 17. Input Voltage versus Output Current http://onsemi.com 7 50 DTC114EXV3T1 Series 1 300 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTC114YXV3T1 TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 200 −25°C 150 100 50 0 80 TA=75°C VCE = 10 250 2 1 4 6 Figure 18. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25°C 3 TA=75°C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25°C −25°C 10 VO = 5 V 1 50 Figure 20. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 Figure 21. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 19. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 22. Input Voltage versus Output Current http://onsemi.com 8 50 10 DTC114EXV3T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM µP OR OTHER LOGIC Figure 23. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 24. Open Collector Inverter: Inverts the Input Signal Figure 25. Inexpensive, Unregulated Current Source http://onsemi.com 9 DTC114EXV3T1 Series PACKAGE DIMENSIONS SC−89 CASE 463C−03 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. A −X− 3 1 B −Y− S 2 K DIM A B C D G H J K L M N S G 2 PL D 0.08 (0.003) M 3 PL X Y N M C J −T− SEATING PLANE MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF −−− −−− 10 _ −−− −−− 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 STYLE 1: PIN 1. BASE 2. EMITTER 3. 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