ONSEMI NCV4269D2R2

NCV4269
5.0 V Micropower 150 mA
LDO Linear Regulator with
DELAY, Adjustable RESET,
and Sense Output
The NCV4269 is a 5.0 V precision micropower voltage regulator
with an output current capability of 150 mA.
The output voltage is accurate within ±2.0% with a maximum
dropout voltage of 0.5 V at 100 mA. Low quiescent current is a feature
drawing only 240 mA with a 1.0 mA load. This part is ideal for any and
all battery operated microprocessor equipment.
Microprocessor control logic includes an active reset output RO
with delay and a SI/SO monitor which can be used to provide an early
warning signal to the microprocessor of a potential impending reset
signal. The use of the SI/SO monitor allows the microprocessor to
finish any signal processing before the reset shuts the microprocessor
down.
The active Reset circuit operates correctly at an output voltage as
low as 1.0 V. The Reset function is activated during the power up
sequence or during normal operation if the output voltage drops
outside the regulation limits.
The reset threshold voltage can be decreased by the connection of an
external resistor divider to the RADJ lead. The regulator is protected
against reverse battery, short circuit, and thermal overload conditions.
The device can withstand load dump transients making it suitable for
use in automotive environments. The device has also been optimized
for EMC conditions.
•
•
•
•
•
•
•
5.0 V ± 2.0% Output
Low 240 mA Quiescent Current
Active Reset Output Low Down to VQ = 1.0 V
Adjustable Reset Threshold
150 mA Output Current Capability
Fault Protection
♦ +60 V Peak Transient Voltage
♦ −40 V Reverse Voltage
♦ Short Circuit
♦ Thermal Overload
Early Warning through SI/SO Leads
Internally Fused Leads in SO−14 and SO−20L Packages
Integrated Pullup Resistor at Logic Outputs (To Use External
Resistors, Select the NCV4279)
Very Low Dropout Voltage
Electrical Parameters Guaranteed Over Entire Temperature Range
NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
Pb−Free Packages are Available
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 10
MARKING
DIAGRAMS
8
SO−8
D SUFFIX
CASE 751
8
1
4269
ALYW
G
1
8
8
1
SO−8
EXPOSED PAD
D SUFFIX
CASE 751AC
V4269
ALYW
G
1
14
SO−14
D SUFFIX
CASE 751A
14
1
NCV4269
AWLYWWG
1
20
20
Features
•
•
•
•
•
•
http://onsemi.com
1
NCV4269
AWLYYWWG
1
SO−20L
DW SUFFIX
CASE 751D
A
WL, L
YY, Y
WW, W
G, G
1
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb Free
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
Publication Order Number:
NCV4269/D
NCV4269
I
Q
Error
Amplifier
Current and
Saturation
Control
Reference
and Trim
RSO
RRO
RO
D
or
Reference
SO
RADJ
+
SI
−
GND
Figure 1. Block Diagram
PIN CONNECTIONS
1
I
1
8
SI
RADJ
D
GND
GND
GND
GND
RO
Q
SO
RO
RADJ
D
GND
SO−8
1
20
SI
I
NC
GND
GND
GND
GND
NC
Q
SO
RADJ
D
NC
GND
GND
GND
GND
NC
NC
RO
14
SI
I
GND
GND
GND
Q
SO
SO−14
SO−20L
PACKAGE PIN DESCRIPTION
Package Pin Number
SO−8
SO−14
SO−20L
Pin Symbol
3
1
1
RADJ
4
2
2
D
5
3, 4, 5, 6,
10, 11, 12
4, 5, 6, 7, 14,
15, 16, 17
GND
−
−
3, 8, 9, 13, 18
NC
No connection to these pins from the IC.
6
7
10
RO
Reset Output; The Open−Collector Output has a 20 kW Pullup Resistor to
Q. Leave Open if Not Used.
7
8
11
SO
Sense Output; This Open−Collector Output is Internally Pulled Up by
20 kW pullup resistor to Q. If not used, keep open.
8
9
12
Q
5 V Output; Connect to GND with a 10 mF Capacitor, ESR < 10 W.
1
13
19
I
Input; Connect to GND Directly at the IC with a Ceramic Capacitor.
2
14
20
SI
Function
Reset Threshold Adjust; if not used to connect to GND.
Reset Delay; To Set Time Delay, Connect to GND with Capacitor
Ground
Sense Input; If not used, Connect to Q.
http://onsemi.com
2
NCV4269
MAXIMUM RATINGS (TJ = −40°C to 150°C)
Parameter
Input to Regulator
Symbol
Min
Max
Unit
VI
II
−40
Internally Limited
45
Internally Limited
V
Input Transient to Regulator
VI
−
60
V
Sense Input
VSI
ISI
−40
−1
45
1
V
mA
VRADJ
IRADJ
−0.3
−10
7
10
V
mA
Reset Delay
VD
ID
−0.3
Internally Limited
7
Internally Limited
V
Ground
Iq
50
−
mA
Reset Output
VRO
IRO
−0.3
Internally Limited
7
Internally Limited
V
Sense Output
VSO
ISO
−0.3
Internally Limited
7
Internally Limited
V
Regulated Output
VQ
IQ
−0.5
−10
7.0
−
V
mA
TJ
TSTG
−
−50
150
150
°C
°C
VI
TJ
−
−40
45
150
V
°C
Reset Threshold Adjust
Junction Temperature
Storage Temperature
Input Voltage Operating Range
Junction Temperature Operating Range
Lead Temperature Soldering and MSL
Parameter
Symbol
Value
MSL, 20−Lead LS Temperature 265°C Peak (Note 3)
MSL
3
MSL, 20−Lead, LS Temperature 240°C Peak (Note 4)
MSL
1
MSL, 8−Lead, 14−Lead, LS Temperature 265°C Peak (Note 3)
MSL
1
MSL, 8−Lead EP, LS Temperature 260°C
MSL
2
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series incorporates ESD protection and exceeds the following ratings:
Human Body Model (HBM) ≤ 2.0 kV per JEDEC standard: JESD22–A114.
Machine Model (MM) ≤ 200 V per JEDEC standard: JESD22–A115.
2. Latchup Current Maximum Rating: ≤ 150 mA per JEDEC standard: JESD78.
3. +5°C/−0°C, 40 Sec Max−at−Peak, 60 − 150 Sec above 217°C.
4. +5°C/−0°C, 30 Sec Max−at−Peak, 60 − 150 Sec above 183°C.
THERMAL CHARACTERISTICS
Characteristic
Test Conditions (Typical Values)
Unit
Junction−to−Pin 4 ( Y − JL4, YL4)
53.8
°C/W
Junction−to−Ambient Thermal Resistance (RqJA, qJA)
170.9
°C/W
Junction−to−Pin 8 ( Y − JL8, YL8)
23.7
°C/W
Junction−to−Ambient Thermal Resistance (RqJA, qJA)
71.4
°C/W
Junction−to−Pad ( Y − JPad)
7.7
°C/W
Junction−to−Pin 4 ( Y − JL4, YL4)
18.4
°C/W
Junction−to−Ambient Thermal Resistance (RqJA, qJA)
111.6
°C/W
Junction−to−Pin 4 ( Y − JL4, YL4)
21.8
°C/W
Junction−to−Ambient Thermal Resistance (RqJA, qJA)
95.3
°C/W
SO−8 Package (Note 5)
SO−8 EP Package (Note 5)
SO−14 Package (Note 5)
SO−20 Package (Note 5)
5. 2 oz copper, 50 mm2 copper area, 1.5 mm thick FR4
http://onsemi.com
3
NCV4269
ELECTRICAL CHARACTERISTICS (TJ = −40°C ≤ TJ ≤ 125°C, VI = 13.5 V unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
Output Voltage
VQ
1 mA v IQ v 100 mA 6 V v VI v 16 V
4.90
5.00
5.10
V
Current Limit
IQ
−
150
200
500
mA
Current Consumption; Iq = II – IQ
Iq
IQ = 1 mA, RO, SO High
−
240
250
mA
Current Consumption; Iq = II – IQ
Iq
IQ = 10 mA, RO, SO High
−
250
450
mA
Current Consumption; Iq = II – IQ
Iq
IQ = 50 mA, RO, SO High
−
2.0
3.0
mA
Dropout Voltage
Vdr
VI = 5 V, IQ = 100 mA
−
0.25
0.5
V
Load Regulation
DVQ
IQ = 5 mA to 100 mA
−
10
20
mV
Line Regulation
DVQ
VI = 6 V to 26 V IQ = 1 mA
−
10
30
mV
VRT
−
4.50
4.65
4.80
V
VRAD,JTH
VQ > 3.5 V
1.26
1.35
1.44
V
Reset Pullup Resistance
RSO,INT
−
10
20
40
kW
Reset Output Saturation Voltage
VRO,SAT
VQ < VRT, RRO, INT
−
0.1
0.4
V
Upper Delay Switching Threshold
VUD
−
1.4
1.8
2.2
V
Lower Delay Switching Threshold
VLD
−
0.3
0.45
0.60
V
VD,SAT
VQ < VRT
−
−
0.1
V
Charge Current
ID
VD = 1 V
3.0
6.5
9.5
mA
Delay Time L ³ H
td
CD = 100 nF
17
28
−
ms
Delay Time H ³ L
tt
CD = 100 nF
−
1.0
−
ms
Sense Threshold High
VSI,High
−
1.24
1.31
1.38
V
Sense Threshold Low
VSI,Low
−
1.16
1.20
1.28
V
Sense Output Saturation Voltage
VSO,Low
VSI < 1.20 V; VQ > 3 V; RSO
−
0.1
0.4
V
Sense Resistor Pullup
RSO,INT
−
10
20
40
kW
ISI
−
−1.0
0.1
1.0
mA
REGULATOR
RESET GENERATOR
Reset Switching Threshold
Reset Adjust Switching Threshold
Saturation Voltage on Delay Capacitor
INPUT VOLTAGE SENSE
Sense Input Current
http://onsemi.com
4
NCV4269
II
I
CI
470 nF
1000 mF
IQ
Q
CQ
22 mF
RADJ1
ISI
VI
SI
D
GND
ID
VSI
RADJ
SO
RO
Iq
VRO
IRADJ
VQ
VSO
VRADJ
VD
CD
100 nF
RADJ2
Figure 2. Measuring Circuit
VI
t
< tRR
VQ
VRT
t
dV
I
+ D
dt
CD
VD
VUD
VLD
t
td
tRR
VRO
VROSAT
t
Power−on−Reset
Thermal
Shutdown
Voltage Dip
at Input
Undervoltage
Figure 3. Reset Timing Diagram
http://onsemi.com
5
Secondary
Spike
Overload
at Output
NCV4269
Sense Input Voltage
VSI,HIGH
VSI,LOW
t
Sense Output Voltage
tPDSOLH
tPDSOHL
HIGH
LOW
t
Figure 4. Sense Timing Diagram
TYPICAL PERFORMANCE CHARACTERISTICS
16
3.2
VI = 13.5 V
VD = 1.0 V
2.8
12
2.4
10
2.0
VD, (V)
ID, (mA)
14
8
1.2
4
0.8
2
0.4
0
40
80
120
0
−40
160
VUD
1.6
6
0
−40
VI = 13.5 V
VLD
0
40
80
120
TJ, (°C)
TJ, (°C)
Figure 5. Charge Current ID vs. Temperature TJ
Figure 6. Switching Voltage VUD and VLD vs.
Temperature TJ
http://onsemi.com
6
160
NCV4269
TYPICAL PERFORMANCE CHARACTERISTICS
500
1.7
1.6
400
1.5
300
VRAD,JTH, (V)
Vdr, (mV)
TJ = 125°C
TJ = 25°C
200
TJ = −40°C
1.4
1.3
1.2
1.1
100
1.0
0
0
30
60
90
120
150
0.9
−40
180
40
120
160
IQ, (mA)
Figure 7. Drop Voltage Vdr vs. Output Current IQ
Figure 8. Reset Adjust Switching Threshold,
VRAD,JTH vs. Temperature TJ
35
12
30
10
8
15
VQ (V)
20
RL = 33 W
RL = 100 W
10
0
0
10
6
RL = 50 W
4
RL = 200 W
RL = 50 W
5
2
20
30
40
0
0
50
2
4
VI, (V)
10
5.2
VI = 13.5 V
5.1
VI = 13.5 V
1.4
5.0
VQ, (V)
VSI, High
1.3
VSI, Low
4.9
1.2
4.8
1.1
4.7
1.0
−40
8
Figure 10. Output Voltage VQ vs. Input Voltage VI
1.6
1.5
6
VI, (V)
Figure 9. Current Consumption Iq vs. Input
Voltage VI
VSI, (V)
80
TJ, (°C)
25
Iq, (mA)
0
0
40
80
120
4.6
−40
160
TJ, (°C)
0
40
80
120
160
TJ, (°C)
Figure 11. Sense Threshold VSI vs. Temperature TJ
Figure 12. Output Voltage VQ vs. Temperature TJ
http://onsemi.com
7
NCV4269
TYPICAL PERFORMANCE CHARACTERISTICS
350
12
300
10
TJ = 25°C
8
200
Iq, (mA)
IQ, (mA)
250
TJ = 125°C
150
6
4
100
2
50
0
0
10
20
30
40
0
0
50
20
40
80
60
100
120
VI, (V)
IQ, (mA)
Figure 13. Output Current Limit IQ vs. Input
Voltage VI
Figure 14. Current Consumption Iq vs. Output
Current IQ
1.6
1.4
VI = 13.5 V
TJ = 25°C
7
VI = 13.5 V
TJ = 25°C
TJ = 125°C
6
1.2
5
IQ = 100 mA
Iq, (mA)
Iq, (mA)
1.0
0.8
0.6
4
3
2
0.4
0.2
1
0.0
0
0
6
10
20
40
30
50
IQ = 50 mA
IQ = 10 mA
8
10
12
14
16
20
22
VI, (V)
Figure 15. Current Consumption Iq vs.
Output Current IQ
Figure 16. Quiescent Current Iq vs.
Input Voltage VI
250
200
26
Stable Region for
0.1 mF to 10 mF
ESR (W)
10
IQ = 100 mA
150
24
Unstable Region
for all caps
100
TJ = 25°C
Iq, (mA)
18
IQ, (mA)
1
Unstable Region
for 0.1 mF ONLY
100
50
6
8
10
12
14
16
18
20
22
24
0.1
0
26
25
50
Stable Region for
1 mF to 10 mF
75
100
125
150
VI, (V)
OUTPUT CURRENT IN MILLIAMPS
Figure 17. Quiescent Current Iq vs. Input Voltage VI
Figure 18. Output Stability, Capacitance ESR
vs. Output Load Current
http://onsemi.com
8
NCV4269
TYPICAL THERMAL CHARACTERISTICS
200
180
160
qJA (°C/W)
140
120
100
80
60
40
20
0
0
100
200
300
400
500
600
700
COPPER HEAT−SPREADER AREA (mm2)
SO−8 Std Package NCV4269, 1.0 oz
SO−8 Std Package NCV4269, 2.0 oz
SO−14 w/6 Thermal Leads NCV4269, 1.0 oz
SO−14 w/6 Thermal Leads NCV4269, 2.0 oz
SO−20 w/8 Thermal Leads NCV4269, 1.0 oz
SO−20 w/8 Thermal Leads NCV4269, 2.0 oz
Figure 19. Junction−to−Ambient Thermal Resistance (qJA) vs. Heat Spreader Area
1000
R(t) (°C/W)
100
10
1
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (s)
Single Pulse (SO−8 Std Package) PCB = 50 mm2, 2.0 oz
Single Pulse (SO−8 EP Package)
Single Pulse (SO−14 w/6 Thermal Leads) PCB = 50 mm2, 2.0 oz
Single Pulse (SO−20 w/8 Thermal Leads) PCB = 50 mm2, 2.0 oz
YLA (SO−8)
YLA (SO−14)
YLA (SO−20)
Figure 20. R(t) vs. Pulse Time
http://onsemi.com
9
1
10
100
1000
NCV4269
APPLICATION DESCRIPTION
OUTPUT REGULATOR
If the reset adjust option is not needed, the RADJ pin
should be connected to GND causing the reset threshold to
go to its default value (typically 4.65 V).
The output is controlled by a precision trimmed reference.
The PNP output has base drive quiescent current control for
regulation while the input voltage is low, preventing over
saturation. Current limit and voltage monitors complement
the regulator design to give safe operating signals to the
processor and control circuits.
RESET DELAY (D)
The reset delay circuit provides a delay (programmable by
capacitor CD) on the reset output lead RO. The delay lead D
provides charge current ID (typically 6.5 mA) to the external
delay capacitor CD during the following times:
1. During Powerup (once the regulation threshold has
been exceeded).
2. After a reset event has occurred and the device is
back in regulation. The delay capacitor is set to
discharge when the regulation (VRT, reset
threshold voltage) has been violated. When the
delay capacitor discharges to VLD, the reset signal
RO pulls low.
RESET OUTPUT (RO)
A reset signal, Reset Output, RO, (low voltage) is
generated as the IC powers up. After the output voltage VQ
increases above the reset threshold voltage VRT, the delay
timer D is started. When the voltage on the delay timer VD
passes VUD, the reset signal RO goes high. A discharge of
the delay timer VD is started when VQ drops and stays below
the reset threshold voltage VRT. When the voltage of the
delay timer VD drops below the lower threshold voltage VLD
the reset output voltage VRO is brought low to reset the
processor.
The reset output RO is an open collector NPN transistor
with an internal 20 kW pullup resistor connected to the
output Q, controlled by a low voltage detection circuit. The
circuit is functionally independent of the rest of the IC,
thereby guaranteeing that RO is valid for VQ as low as 1.0 V.
SETTING THE DELAY TIME
The delay time is set by the delay capacitor CD and the
charge current ID. The time is measured by the delay
capacitor voltage charging from the low level of VDSAT to
the higher level VUD. The time delay follows the equation:
td + [CD (VUD * VDSAT)]ńID
Example:
Using CD = 100 nF.
Use the typical value for VDSAT = 0.1 V.
Use the typical value for VUD = 1.8 V.
Use the typical value for Delay Charge Current ID = 6.5 mA.
RESET ADJUST (RADJ)
The reset threshold VRT can be decreased from a typical
value of 4.65 V to as low as 3.5 V by using an external
voltage divider connected from the Q lead to the pin RADJ,
as shown in Figure 21. The resistor divider keeps the voltage
above the VRADJ,TH (typical 1.35 V) for the desired input
voltages, and overrides the internal threshold detector.
Adjust the voltage divider according to the following
relationship:
VRT + VRADJ, TH @ (RADJ1 ) RADJ2) ń RADJ2
I
CI*
td + [100 nF (1.8 * 0.1 V)] ń 6.5 mA + 26.2 ms (eq. 3)
(eq. 1)
Q
VDD
CQ**
10 mF
RADJ1
0.1 mF
RADJ
RADJ2
NCV4269
D
Microprocessor
VBAT
RSI1
SI
RSI2
CD
RO
SO
(eq. 2)
I/O
GND
*CI required if regulator is located far from the power supply filter.
** CQ required for Stability. Cap must operate at minimum temperature expected.
Figure 21. Application Diagram
http://onsemi.com
10
I/O
NCV4269
SENSE INPUT (SI) / SENSE OUTPUT (SO) VOLTAGE
MONITOR
instability. The aluminum electrolytic capacitor is the least
expensive solution, but, if the circuit operates at low
temperatures (−25°C to −40°C), both the value and ESR of
the capacitor will vary considerably. The capacitor
manufacturer’s data sheet usually provides this information.
The value for the output capacitor CQ shown in Figure 21
should work for most applications; however, it is not
necessarily the optimized solution. Stability is guaranteed at
values CQ = 10 mF and an ESR = 10 W within the operating
temperature range. Actual limits are shown in a graph in the
typical data section.
An on−chip comparator is available to provide early
warning to the microprocessor of a possible reset signal. The
output is from an open collector driver with an internal
20 kW pull up resistor to output Q. The reset signal typically
turns the microprocessor off instantaneously. This can cause
unpredictable results with the microprocessor. The signal
received from the SO pin will allow the microprocessor time
to complete its present task before shutting down. This
function is performed by a comparator referenced to the
band gap voltage. The actual trip point can be programmed
externally using a resistor divider to the input monitor SI
(Figure 21). The values for RSI1 and RSI2 are selected for a
typical threshold of 1.20 V on the SI Pin.
CALCULATING POWER DISSIPATION IN A SINGLE
OUTPUT LINEAR REGULATOR
The maximum power dissipation for a single output
regulator (Figure 21) is:
SIGNAL OUTPUT
PD(max) + [VI(max) * VQ(min)] IQ(max) ) VI(max) Iq (eq. 4)
Figure 22 shows the SO Monitor timing waveforms as a
result of the circuit depicted in Figure 21. As the output
voltage (VQ) falls, the monitor threshold (VSILOW), is
crossed. This causes the voltage on the SO output to go low
sending a warning signal to the microprocessor that a reset
signal may occur in a short period of time. TWARNING is the
time the microprocessor has to complete the function it is
currently working on and get ready for the reset
shutdown signal.
where:
VI(max) is the maximum input voltage,
VQ(min) is the minimum output voltage,
IQ(max) is the maximum output current for the application,
and Iq is the quiescent current the regulator consumes at
IQ(max).
Once the value of PD(max) is known, the maximum
permissible value of RqJA can be calculated:
RqJA = (150°C – TA) / PD
VQ
(eq. 5)
The value of RqJA can then be compared with those in the
package section of the data sheet. Those packages with
RqJA’s less than the calculated value in equation 2 will keep
the die temperature below 150°C. In some cases, none of the
packages will be sufficient to dissipate the heat generated by
the IC, and an external heatsink will be required. The current
flow
and
voltages
are
shown
in
the
Measurement Circuit Diagram.
SI
VSILOW
VRO
HEATSINKS
A heatsink effectively increases the surface area of the
package to improve the flow of heat away from the IC and
into the surrounding air.
Each material in the heat flow path between the IC and the
outside environment will have a thermal resistance. Like
series electrical resistances, these resistances are summed to
determine the value of RqJA:
SO
TWARNING
Figure 22. SO Warning Waveform Time Diagram
RqJA + RqJC ) RqCS ) RqSA
STABILITY CONSIDERATIONS
The input capacitor CI in Figure 21 is necessary for
compensating input line reactance. Possible oscillations
caused by input inductance and input capacitance can be
damped by using a resistor of approximately 1.0 W in series
with CI.
The output or compensation capacitor helps determine
three main characteristics of a linear regulator: startup delay,
load transient response and loop stability.
The capacitor value and type should be based on cost,
availability, size and temperature constraints. A tantalum or
aluminum electrolytic capacitor is best, since a film or
ceramic capacitor with almost zero ESR can cause
(eq. 6)
where:
RqJC = the junction−to−case thermal resistance,
RqCS = the case−to−heat sink thermal resistance, and
RqSA = the heat sink−to−ambient thermal resistance.
RqJC appears in the package section of the data sheet. Like
RqJA, it too is a function of package type. RqCS and RqSA are
functions of the package type, heatsink and the interface
between them. These values appear in data sheets of
heatsink manufacturers. Thermal, mounting, and
heatsinking considerations are discussed in the
ON Semiconductor application note AN1040/D, available
on the ON Semiconductor website.
http://onsemi.com
11
NCV4269
ORDERING INFORMATION
Device
Output Voltage
Package
NCV4269D1
Shipping †
SO−8
NCV4269D1G
SO−8
(Pb−Free)
NCV4269D1R2
SO−8
98 Units/Rail
2500 Tape & Reel
NCV4269D1R2G
SO−8
(Pb−Free)
NCV4269PDG
SO−8 EP
(Pb−Free)
98 Units/Rail
NCV4269PDR2G
SO−8 EP
(Pb−Free)
2500 Tape & Reel
NCV4269D2
NCV4269D2G
SO−14
5.0 V
SO−14
(Pb−Free)
NCV4269D2R2
55 Units/Rail
SO−14
NCV4269D2R2G
SO−14
(Pb−Free)
NCV4269DW
2500 Tape & Reel
SO−20L
NCV4269DWG
SO−20L
(Pb−Free)
NCV4269DWR2
SO−20L
NCV4269DWR2G
SO−20L
(Pb−Free)
38 Units/Rail
1000 Tape & Reel
†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
12
NCV4269
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
0.25 (0.010)
S
B
1
M
Y
M
4
K
−Y−
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
13
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8 _
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
NCV4269
PACKAGE DIMENSIONS
SOIC−8 EP
CASE 751AC−01
ISSUE B
2X
NOTES:
1. DIMENSIONS AND TOLERANCING PER
ASME Y14.5M, 1994.
2. DIMENSIONS IN MILLIMETERS (ANGLES
IN DEGREES).
3. DIMENSION b DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE
0.08 MM TOTAL IN EXCESS OF THE “b”
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
4. DATUMS A AND B TO BE DETERMINED
AT DATUM PLANE H.
0.10 C A−B
D
8
E1
2X
0.10 C D
PIN ONE
LOCATION
DETAIL A
D
A
5
ÉÉÉ
ÉÉÉ
ÉÉÉ
1
F
EXPOSED
PAD
5
8
G
E
h
2X
0.20 C
4
e
4
8X b
0.25 C A−B D
B
1
BOTTOM VIEW
A
END VIEW
TOP VIEW
0.10 C
A2
0.10 C
SEATING
PLANE
C
b1
GAUGE
PLANE
SIDE VIEW
ÇÇ
ÉÉ
ÉÉ
ÇÇ
ÉÉ
ÇÇ
c
H
A
8X
A
A1
L
0.25
(L1)
DETAIL A
q
c1
(b)
SECTION A−A
SOLDERING FOOTPRINT*
2.72
0.107
1.52
0.060
7.0
0.275
Exposed
Pad
4.0
0.155
2.03
0.08
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
14
DIM
A
A1
A2
b
b1
c
c1
D
E
E1
e
L
L1
F
G
h
q
MILLIMETERS
MIN
MAX
1.35
1.75
0.00
0.10
1.35
1.65
0.31
0.51
0.28
0.48
0.17
0.25
0.17
0.23
4.90 BSC
6.00 BSC
3.90 BSC
1.27 BSC
0.40
1.27
1.04 REF
2.24
3.20
1.55
2.51
0.25
0.50
0_
8_
NCV4269
PACKAGE DIMENSIONS
SO−14
D SUFFIX
CASE 751A−03
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
−A−
14
8
−B−
1
P 7 PL
0.25 (0.010)
7
G
M
B
M
F
R X 45 _
C
−T−
SEATING
PLANE
D 14 PL
0.25 (0.010)
M
T B
J
M
K
S
A
S
http://onsemi.com
15
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337
0.344
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.228
0.244
0.010
0.019
NCV4269
−PACKAGE
DIMENSIONS
SO−20L
DW SUFFIX
CASE 751D−05
ISSUE G
q
A
20
X 45 _
h
H
M
E
0.25
10X
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
11
B
M
D
1
10
20X
B
B
0.25
M
T A
S
B
S
L
A
18X
e
A1
SEATING
PLANE
C
T
DIM
A
A1
B
C
D
E
e
H
h
L
q
MILLIMETERS
MIN
MAX
2.35
2.65
0.10
0.25
0.35
0.49
0.23
0.32
12.65
12.95
7.40
7.60
1.27 BSC
10.05
10.55
0.25
0.75
0.50
0.90
0_
7_
SMART REGULATOR is a registered trademark of Semiconductor Components Industries, LLC (SCILLIC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
16
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCV4269/D