BC490, BC490A, BC490B High Current Transistors PNP Silicon • Device Marking: 490 Device Marking: 490A Device Marking: 490B http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –80 Vdc Collector-Base Voltage VCBO –80 Vdc Emitter-Base Voltage VEBO –4.0 Vdc Collector Current — Continuous IC –1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C –55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W Operating and Storage Junction Temperature Range TJ, Tstg 2 BASE 3 EMITTER 1 2 3 THERMAL CHARACTERISTICS Characteristic CASE 29 TO–92 STYLE 17 ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 June, 2001 – Rev. 1 1 Package Shipping BC490 TO–92 5000 Units/Box BC490A TO–92 5000 Units/Box BC490AZL1 TO–92 2000/Ammo Pack BC490BZL1 TO–92 2000/Ammo Pack Publication Order Number: BC490/D BC490, BC490A, BC490B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) V(BR)CEO –80 — — Vdc Collector–Base Breakdown Voltage (IC = –100 Adc, IE = 0) V(BR)CBO –80 — — Vdc Emitter–Base Breakdown Voltage (IE = –10 Adc, IC = 0) V(BR)EBO –4.0 — — Vdc ICBO — — –100 nAdc 40 60 100 160 15 — — 140 — — — 400 250 400 — — — –0.25 –0.5 –0.5 — — — –0.9 –1.0 –1.2 — fT — 150 — MHz Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cob — 9.0 — pF Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cib — 110 — pF OFF CHARACTERISTICS Collector Cutoff Current (VCB = –60 Vdc, IE = 0) ON CHARACTERISTICS* DC Current Gain (IC = –10 mAdc, VCE = –2.0 Vdc) (IC = –100 mAdc, VCE = –2.0 Vdc) hFE — BC490 BC490A BC490B (IC = –1.0 Adc, VCE = –5.0 Vdc) Collector–Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) (IC = –1.0 Adc, IB = –100 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) (IC = –1.0 Adc, IB = –100 mAdc) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. TURN-OFF TIME TURN-ON TIME 100 +10 V 0 tr = 3.0 ns RB Vin 5.0 µF +VBB VCC +40 V -1.0 V 5.0 µs 100 RL VCC +40 V 100 OUTPUT RB Vin 5.0 µF *CS < 6.0 pF 5.0 µs tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 100 RL OUTPUT *CS < 6.0 pF 200 100 VCE = -2.0 V TJ = 25°C 70 100 70 50 30 TJ = 25°C Cibo 50 C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) BC490, BC490A, BC490B 30 20 10 Cobo 7.0 20 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) 5.0 -0.1 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current–Gain — Bandwidth Product -50 -100 Figure 3. Capacitance 1.0 k 700 500 ts 300 t, TIME (ns) 200 100 70 50 td @ VBE(off) = -0.5 V tf VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 30 20 tr 10 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) -500 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Switching Time 1.0 0.7 0.5 D = 0.5 0.2 0.1 0.3 0.2 0.1 0.07 0.05 P(pk) 0.01 t1 0.02 SINGLE PULSE 0.03 SINGLE PULSE ZθJC(t) = r(t) • RθJC ZθJA(t) = r(t) • RθJA 0.02 0.01 1.0 2.0 5.0 10 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–469) TJ(pk) – TC = P(pk) ZJC(t) TJ(pk) – TA = P(pk) ZJA(t) 20 50 100 200 t, TIME (ms) 500 1.0k Figure 5. Thermal Response http://onsemi.com 3 2.0k 5.0k 10k 20k 50k 100 BC490, BC490A, BC490B -1.0 k -700 1.0 100 µs TJ = 25°C 0.8 -300 1.0 s -200 -100 -70 -50 1.0 ms TC = 25°C TA = 25°C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -30 -20 VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) -500 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 BC490 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -10 -1.0 VBE(on) @ VCE = 1.0 V 0 0.5 1.0 2.0 1.0 500 200 500 -0.8 RθVB, TEMPERATURE COEFFICIENT (mV/°C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 Figure 7. “On” Voltages Figure 6. Active Region, Safe Operating Area TJ = 25°C -1.2 0.8 0.6 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 50 mA IC = 10 mA 100 mA 250 mA 500 mA -1.6 -2.0 0.4 -2.4 0.2 0 0.05 RθVB for VBE 0.1 0.2 1.0 2.0 10 0.5 5.0 IC, COLLECTOR CURRENT (mA) 20 -2.8 0.5 50 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) Figure 9. Base–Emitter Temperature Coefficient Figure 8. Collector Saturation Region 400 hFE , DC CURRENT GAIN TJ = 125°C 200 VCE = -1.0 V 25°C -55°C 100 80 60 40 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 10. DC Current Gain http://onsemi.com 4 -50 -70 -100 -200 -300 -500 BC490, BC490A, BC490B VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25°C VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 0 -0.5 -1.0 VCE(sat) @ IC/IB = 10 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 TJ = 25°C -0.8 -0.6 IC = -10 mA -50 mA 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA) -1.6 RθVB for VBE -2.4 -1.0 -2.0 -500 mA -10 -20 Figure 12. Collector Saturation Region -1.2 -2.8 -0.5 -250 mA -0.2 -0.8 -2.0 -100 mA -0.4 Figure 11. “On” Voltages RθVB, TEMPERATURE COEFFICIENT (mV/°C) V, VOLTAGE (VOLTS) -0.8 -1.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 Figure 13. Base–Emitter Temperature Coefficient http://onsemi.com 5 -50 BC490, BC490A, BC490B PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER http://onsemi.com 6 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- BC490, BC490A, BC490B Notes http://onsemi.com 7 BC490, BC490A, BC490B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). 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