ONSEMI NTMFS4897NFT1G

NTMFS4897NF
Power MOSFET
30 V, 171 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Includes Schottky Diode
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Device
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V(BR)DSS
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
RDS(ON) MAX
2.0 mW @ 10 V
30 V
Parameter
Gate−to−Source Voltage
N−CHANNEL MOSFET
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
29
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.74
W
Continuous Drain
Current RqJA v
10 sec
TA = 25°C
ID
47
A
Power Dissipation
RqJA, t v 10 sec
TA = 25°C
PD
7.3
W
TA = 25°C
ID
17
A
Continuous Drain
Current RqJA
(Note 2)
TA = 85°C
Steady
State
12
TA = 25°C
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
PD
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
96.2
W
TA = 25°C
IDM
288
A
TA = 25°C
IDmaxpkg
100
A
TJ,
TSTG
−55 to
+150
°C
IS
120
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 50 Apk, L = 0.3 mH, RG = 25 W)
EAS
375
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
ID
TC = 85°C
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
0.95
W
A
171
123
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2010
June, 2010 − Rev. 1
MARKING
DIAGRAM
D
TA = 85°C
tp=10ms
S
34
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
D
G
21
TA = 85°C
171 A
3.0 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Drain−to−Source Voltage
ID MAX
1
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
4897NF
AYWWG
G
D
D
D
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4897NFT1G
SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4897NFT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Publication Order Number:
NTMFS4897NF/D
NTMFS4897NF
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
1.3
Junction−to−Ambient – Steady State (Note 1)
RqJA
45.7
Junction−to−Ambient – Steady State (Note 2)
RqJA
132.1
Junction−to−Ambient − t v 10 sec
RqJA
17.2
Unit
°C/W
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 1.0 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
V
28.5
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 1.0 mA
60
mV/°C
500
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
2.0
4
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.5
gFS
ID = 22 A
1.3
ID = 20 A
1.3
ID = 20 A
2.0
ID = 18 A
2.0
VDS = 15 V, ID = 15 A
90
mV/°C
2.0
3.0
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
495
Total Gate Charge
QG(TOT)
40.2
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
5660
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 23 A
1150
6.4
15.3
pF
nC
13.4
QG(TOT)
VGS = 10 V, VDS = 15 V,
ID = 23 A
83.6
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
26
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
24
36
13
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4897NF
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
15.7
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
21.2
ns
44.6
14.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.35
TJ = 125°C
0.26
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 2.0 A
0.70
V
39.1
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 23 A
20.1
ns
19
QRR
34
nC
Source Inductance
LS
0.66
nH
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
0.20
1.5
0.7
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
2.0
W
NTMFS4897NF
TJ = 25°C
ID, DRAIN CURRENT (A)
VGS = 4.0 V
4.2 V thru 10 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
0
1
2
4
3
5
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
VDS = 10 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
1
2.5
2
1.5
3.5
3
4
5
4.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0.0035
0.010
ID = 20 A
TJ = 25°C
0.008
TJ = 25°C
0.0030
0.0025
0.006
VGS = 4.5 V
0.0020
0.0015
0.004
VGS = 10 V
0.0010
0.002
0
0.0005
2
3
4
5
6
7
8
9
10
1.6
1.5
1.4
10 30
70
90
110 130 150 170 190 210
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.0E−01
ID = 20 A
VGS = 10 V
VGS = 0 V
TJ = 150°C
1.0E−02
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
50
ID, DRAIN CURRENT (A)
1.8
1.7
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TYPICAL PERFORMANCE CURVES
TJ = 125°C
1.0E−03
1.0E−04
TJ = 25°C
1.0E−05
1.0E−06
−25
0
25
50
75
100
125
150
5
TJ, JUNCTION TEMPERATURE (°C)
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4897NF
8000
VGS = 0 V
C, CAPACITANCE (pF)
7000
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL PERFORMANCE CURVES
TJ = 25°C
6000
Ciss
5000
4000
3000
2000
0
Coss
Crss
1000
0
8
4
12
16
20
24
28
11
QT
10
9
8
7
6
5
Qgs
4
ID = 30 A
TJ = 25°C
VDD = 15 V
VGS = 30 A
3
2
1
0
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
tf
100
tr
td(on)
10
1
1
10
RG, GATE RESISTANCE (W)
20
15
10
5
0
100
VGS = 0 V
TJ = 25°C
25
0.1
10 ms
100 ms
10
1 ms
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.01
0.1
0.3
0.4
0.5
0.6
0.7
0.8
Figure 10. Diode Forward Voltage vs. Current
dc
10
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
I D, DRAIN CURRENT (A)
100
VGS = 30 V
Single Pulse
TC = 25°C
0.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1000
80
30
td(off)
VDD = 15 V
ID = 15 A
VGS = 10 V
40
50
20
30
60
70
QG, TOTAL GATE CHARGE (nC)
10
Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Charge
Figure 7. Capacitance Variation
1000
Qgd
400
ID = 50 A
350
300
250
200
150
100
50
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
150
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTMFS4897NF
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P (SO8 FL)
CASE 488AA−01
ISSUE C
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
6
2X
0.20 C
5
4X
E1
1
2
3
q
E
2
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
0.10 C
SIDE VIEW
8X
C A B
0.05
c
3X
4X
1.270
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
e/2
L
1
4
K
0.750
4X
1.000
0.965
1.330
2X
0.905
2X
E2
L1
0.495
M
4.530
3.200
0.475
5
6
G
MILLIMETERS
MIN
NOM
MAX
1.10
0.90
1.00
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
−−−
4.22
6.15 BSC
5.50
5.80
6.10
3.45
−−−
4.30
1.27 BSC
0.51
0.61
0.71
0.51
−−−
−−−
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
SOLDERING FOOTPRINT*
DETAIL A
b
0.10
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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NTMFS4897NF/D