VN0300L Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDSS 60 V Drain–Gate Voltage VDGR 60 V Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) VGS VGSM ± 20 ± 40 Vdc Vpk ID 200 mA Pulsed Drain Current IDM 500 mA Power Dissipation @ TC = 25°C Derate above 25°C PD 350 2.8 mW mW/°C TJ, Tstg – °C Continuous Drain Current Operating and Storage Temperature 200 mAMPS 60 VOLTS RDS(on) = 1.2 Ω N–Channel D G S THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 312.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/16” from case for 10 seconds TL 300 °C TO–92 CASE 29 Style 22 12 MARKING DIAGRAM & PIN ASSIGNMENT 3 VN0300L YWW 1 Source 3 Drain 2 Gate Y WW = Year = Work Week ORDERING INFORMATION Device Package Shipping VN0300L TO–92 1000 Units/Box VN0300LRLRA TO–92 2000 Tape & Reel VN0300LRLRE TO–92 2000 Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 2 1 Publication Order Number: VN0300L/D VN0300L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 30 – V – – 10 500 STATIC CHARACTERISTICS Drain–Source Breakdown Voltage (VDS = 0, ID = 10 µA) µA Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TA = 125°C) IDSS Gate–Body Leakage (VDS = 0, VGS = ±30 V) IGSS – ±100 nA VGS(th) 0.8 2.5 V ID(on) 1.0 – A – – 3.3 1.2 gfs 200 – mS Ciss – 100 pF Coss – 95 pF Crss – 25 pF ton – 30 ns toff – 30 ns Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) On–State Drain Current (Note 1.) (VDS = VGS, ID = 1.0 mA) Drain–Source On Resistance (Note 1.) (VGS = 5.0 V, ID = 0.3 A) (VGS = 10 V, ID = 1.0 A) Ω rDS(on) Forward Transconductance (Note 1.) (VDS = 10 V, ID = 0.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 15 Vdc, Vd VGS = 0 0, f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn–On Time Turn–Off Time (VDD = 25 Vdc, ID = 1.0 A, RL = 24 Ω, RG = 25 Ω) 1. Pulse Test; Pulse Width < 300 s, Duty Cycle 2.0%. http://onsemi.com 2 VN0300L PACKAGE DIMENSIONS TO–92 CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C SECTION X–X 1 N N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN http://onsemi.com 3 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- VN0300L ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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