ONSEMI MMVL3401T1

MMVL3401T1
Preferred Device
Silicon Pin Diode
This device is designed primarily for VHF band switching
applications but is also suitable for use in general–purpose switching
circuits. Supplied in a Surface Mount package.
• Rugged PIN Structure Coupled with Wirebond Construction
for Optimum Reliability
• Low Capacitance  0.7 pF Typ at VR = 20 Vdc
• Very Low Series Resistance at 100 MHz  0.34 Ohms (Typ)
@ IF = 10 mAdc
• Device Marking: 4D
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SILICON PIN
SWITCHING DIODE
MAXIMUM RATINGS
Symbol
1
Rating
Value
Unit
2
VR
Continuous Reverse Voltage
20
Vdc
IF
Peak Forward Current
20
mAdc
Max
Unit
PLASTIC
SOD–323
CASE 477
THERMAL CHARACTERISTICS
Symbol
PD
RJA
TJ, Tstg
Characteristic
Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
200
mW
1.57
mW/°C
Thermal Resistance Junction to Ambient
635
°C/W
Junction and Storage Temperature
150
°C
1
CATHODE
*FR–4 Minimum Pad
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping
MMVL3401T1
SOD–323
3000 / Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2001
January, 2000 – Rev. 1
1
Publication Order Number:
MMVL3401T1/D
MMVL3401T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
35
—
—
Vdc
Diode Capacitance
(VR = 20 Vdc)
CT
—
—
1.0
pF
Series Resistance (Figure 5)
(IF = 10 mAdc, f = 100 MHz)
RS
—
—
0.7
Ω
Reverse Leakage Current
(VR = 25 Vdc)
IR
—
—
0.1
µAdc
Reverse Breakdown Voltage
(IR = 10 µAdc)
TYPICAL CHARACTERISTICS
50
1.4
1.2
I F , FORWARD CURRENT (mA)
R S , SERIES RESISTANCE (OHMS)
1.6
TA = 25°C
1.0
0.8
0.6
0.4
40
30
TA = 25°C
20
10
0.2
0
0
2.0
4.0
6.0
8.0
10
12
14
0
0.5
16
0.7
0.8
0.9
1.0
+100
+140
IF, FORWARD CURRENT (mA)
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Series Resistance
Figure 2. Forward Voltage
100
20
40
10
7.0
5.0
I R , REVERSE CURRENT ( µA)
C T , DIODE CAPACITANCE (pF)
0.6
TA = 25°C
2.0
1.0
0.7
0.5
10
4.0
VR = 25 Vdc
1.0
0.4
0.1
0.04
0.01
0.004
0.2
+3.0
0
-3.0 -6.0 -9.0
-12
-15
-18
-21
-24
0.001
-60
-27
VR, REVERSE VOLTAGE (VOLTS)
-20
0
+20
+60
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Diode Capacitance
Figure 4. Leakage Current
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2
MMVL3401T1
PACKAGE DIMENSIONS
SOD–323
PLASTIC PACKAGE
CASE 477–02
ISSUE A
K
A
D
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
B
DIM
A
B
C
D
E
H
J
K
E
C
J
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
1.60
1.80 0.063
0.071
1.15
1.35 0.045
0.053
0.80
1.00 0.031
0.039
0.25
0.40 0.010
0.016
0.15 REF
0.006 REF
0.00
0.10 0.000
0.004
0.089
0.177 0.0035 0.0070
2.30
2.70 0.091
0.106
STYLE 1:
PIN 1. CATHODE
2. ANODE
H
NOTE 3
0.63mm
0.025
1.60mm
0.063
2.85mm
0.112
mm inches
SOD–323
Soldering Footprint
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3
0.83mm
0.033
MMVL3401T1
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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4
MMVL3401T1/D