ONSEMI NSS1C201MZ4T3G

NSS1C201MZ4
100 V, 2.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e 2 PowerEdge family of low V CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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100 VOLTS, 2.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
COLLECTOR
3
1
BASE
Feature
2
EMITTER
• These are Pb−Free Devices
MARKING
DIAGRAM
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
100
Vdc
Collector-Base Voltage
VCBO
140
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
2.0
A
ICM
3.0
A
Rating
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
Characteristic
SOT−223
CASE 318E
STYLE 1
A
Y
W
1C201
G
AYW
1C201G
1
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
800
mW
6.5
mW/°C
4
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
155
°C/W
C
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
2
W
15.6
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
64
°C/W
Top View Pinout
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 3)
710
mW
ORDERING INFORMATION
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 7.6 mm2, 1 oz. copper traces.
2. FR−4 @ 645 mm2, 1 oz. copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 0
1
PIN ASSIGNMENT
B
C
E
1
2
3
Device
Package
Shipping†
NSS1C201MZ4T1G
SOT−223
(Pb−Free)
1000/
Tape & Reel
NSS1C201MZ4T3G
SOT−223
(Pb−Free)
4000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C201MZ4/D
NSS1C201MZ4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
100
Vdc
Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0)
V(BR)CBO
140
Vdc
Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0)
V(BR)EBO
7.0
OFF CHARACTERISTICS
Vdc
Collector Cutoff Current (VCB = 140 Vdc, IE = 0)
ICBO
100
nA
Emitter Cutoff Current (VEB = 6.0 Vdc)
IEBO
50
nA
ON CHARACTERISTICS
hFE
DC Current Gain (Note 4)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = 0.1 A, IB = 0.010 A)
(IC = 0.5 A, IB = 0.050 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 0.100 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V)
VBE(on)
Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
150
120
80
40
360
V
0.030
0.060
0.100
0.180
V
1.10
0.850
V
fT
100
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Cibo
305
pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
Cobo
22
pF
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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2
NSS1C201MZ4
400
360
0.50
Note 2
0.40
0.30
Note 1
0.20
0.10
0
280
240
160
120
−55°C
80
40
0
20
40
60
80
100
120
140
0
0.001
160
0.01
0.1
1
TJ, TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 1. Power Derating
Figure 2. DC Current Gain
10
VCE = 4 V
150°C
320
280
240
25°C
200
160
120
−55°C
80
40
0
0.001
0.01
0.1
1
VBE(sat), COLLECTOR−EMITTER
SATURATOIN VOLTAGE (V)
1
360
hRE, DC CURRENT GAIN
25°C
200
400
IC /IB = 10
0.1
150°C
25°C
0.01
0.001
10
0.01
−55°C
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
Figure 4. Collector−Emitter Saturation Voltage
1
10
1.4
IC /IB = 20
VBE(sat), BASE−EMITTER
SATURATOIN VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATOIN VOLTAGE (V)
VCE = 2 V
150°C
320
hRE, DC CURRENT GAIN
PD, POWER DISSIPATINO (W)
0.60
150°C
25°C
0.1
−55°C
0.01
0.001
0.01
0.1
1
1.2
IC /IB = 10
1
150°C
0.8
0.6
25°C
0.4
−55°C
0.2
0
0.001
10
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Base−Emitter Saturation Voltage
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3
10
NSS1C201MZ4
1.2
1.2
IC /IB = 50
VBE(on), BASE−EMITTER VOLTAGE
(V)
VBE(sat), BASE−EMITTER
SATURATOIN VOLTAGE (V)
1.4
−55°C
1
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
0.01
0.1
1
10
150°C
0.4
0.2
0.0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Voltage
10
400
0.5 A
1A
3A
IC = 0.1 A
2A
0.10
TJ = 25°C
0.001
0.01
0.1
CIB, INPUT CAPACITANCE (pF)
VCE(sat), COLLECTOR−EMITTER
SATURATOIN VOLTAGE (V)
25°C
0.6
IC, COLLECTOR CURRENT (A)
0.01
0.0001
1
TJ = 25°C
fTEST = 1 MHz
350
300
250
200
150
100
50
0
0
1
2
3
4
5
6
IB, BASE CURRENT (A)
VEB, BASE−EMITTER VOLTAGE (V)
Figure 9. Collector Saturation Region
Figure 10. Input Capacitance
7
8
120
45
TJ = 25°C
fTEST = 1 MHz
40
35
30
25
20
15
10
5
10
20
30
40
50
60
70
80
90
fTau, CURRENT GAIN BANDWIDTH
(MHz)
50
COB, OUTPUT CAPACITANCE (pF)
−55°C
0.8
Figure 7. Base−Emitter Saturation Voltage
1.00
0
0
VCE = 2 V
1.0
100
100
TJ = 25°C
fTEST = 1 MHz
VCE = 5 V
80
60
40
20
0
0.001
0.01
0.1
1
VCB, COLLECTOR BASE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 11. Output Capacitance
Figure 12. Current Gain Bandwidth Product
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4
10
NSS1C201MZ4
IC, COLLECTOR CURRENT (A)
10
10 mS
1
1 mS
100 mS
Thermal Limit
0.1
0.01
0.1
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
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5
100
NSS1C201MZ4
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
b1
DIM
A
A1
b
b1
c
D
E
e
e1
L1
HE
4
HE
E
1
2
3
b
e1
e
A
0.08 (0003)
q
C
q
A1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
STYLE 1:
PIN 1.
2.
3.
4.
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NSS1C201MZ4/D