ONSEMI TIP35AG

TIP35A, TIP35B, TIP35C
(NPN); TIP36A, TIP36B,
TIP36C (PNP)
TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices
Complementary Silicon
High−Power Transistors
Designed for general−purpose power amplifier and switching
applications.
Features
• 25 A Collector Current
• Low Leakage Current −
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25 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−100 VOLTS, 125 WATTS
ICEO = 1.0 mA @ 30 and 60 V
• Excellent DC Gain −
hFE = 40 Typ @ 15 A
• High Current Gain Bandwidth Product −
•
⎪hfe⎪ = 3.0 min @ IC
= 1.0 A, f = 1.0 MHz
Pb−Free Packages are Available*
SOT−93 (TO−218)
CASE 340D
STYLE 1
MAXIMUM RATINGS
Rating
Symbol
TIP35A
TIP36A
TIP35B
TIP36B
TIP35C
TIP36C
Unit
Collector − Emitter Voltage
VCEO
60
80
100
Vdc
Collector − Base Voltage
VCB
60
80
100
Vdc
Emitter − Base Voltage
VEB
5.0
Collector Current
− Continuous
− Peak (Note 1)
IC
Base Current − Continuous
IB
5.0
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
125
Adc
25
40
Adc
−65 to +150
_C
ESB
90
mJ
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
1.0
°C/W
Junction−To−Free−Air
Thermal Resistance
RqJA
35.7
°C/W
Unclamped Inductive Load
THERMAL CHARACTERISTICS
Characteristic
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
A
Y
WW
TIP3xx
xx
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%.
September, 2005 − Rev. 5
AYWWG
TIP3xx
W
W/_C
TJ, Tstg
Operating and Storage
Junction Temperature Range
MARKING DIAGRAM
Vdc
1
=
=
=
=
=
Assembly Location
Year
Work Week
Device Code
5A, 5B, 5C
6A, 6B, 6C
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
TIP35A/D
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
ORDERING INFORMATION
Package
Shipping
TIP35A
Device
SOT−93 (TO−218)
30 Units / Rail
TIP35AG
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP35B
SOT−93 (TO−218)
30 Units / Rail
TIP35BG
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP35C
SOT−93 (TO−218)
30 Units / Rail
TIP35CG
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP36A
SOT−93 (TO−218)
30 Units / Rail
TIP36AG
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP36B
SOT−93 (TO−218)
30 Units / Rail
TIP36BG
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP36C
SOT−93 (TO−218)
30 Units / Rail
TIP36CG
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
100
−
−
−
−
−
1.0
1.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mA, IB = 0)
Collector−Emitter Cutoff Current
(VCE = 30 V, IB = 0)
(VCE = 60 V, IB = 0)
VCEO(sus)
TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C
Vdc
ICEO
TIP35A, TIP36A
TIP35B, TIP35C, TIP36B, TIP36C
mA
Collector−Emitter Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES
−
0.7
mA
Emitter−Base Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
−
1.0
mA
25
15
−
75
−
−
1.8
4.0
−
−
2.0
4.0
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 1.5 A, VCE = 4.0 V)
(IC = 15 A, VCE = 4.0 V)
hFE
Collector−Emitter Saturation Voltage
(IC = 15 A, IB = 1.5 A)
(IC = 25 A, IB = 5.0 A)
VCE(sat)
Base−Emitter On Voltage
(IC = 15 A, VCE = 4.0 V)
(IC = 25 A, VCE = 4.0 V)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 1.0 A, VCE = 10 V, f = 1.0 kHz)
hfe
25
−
−
Current−Gain — Bandwidth Product
(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz)
fT
3.0
−
MHz
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
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2
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
PD, POWER DISSIPATION (WATTS)
125
100
75
50
25
0
0
25
50
75
125
100
TC, CASE TEMPERATURE (°C)
150
175
Figure 1. Power Derating
VCC
TURN−ON TIME
RL
+2.0 V
0
RB
VCC
TURN−OFF TIME
3.0
RB
−11.0 V
10 TO 100 mS
DUTY CYCLE ≈ 2.0%
tr ≤ 20 ns
10 to 100 ms
DUTY CYCLE ≈ 2.0%
FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
Figure 2. Switching Time Equivalent Test Circuits
2.0
TJ = 25°C
IC/IB = 10
VCC = 30 V
VBE(off) = 2 V
1.0
t, TIME (s)
μ
0.7
0.5
tr
0.2
0.1
(PNP)
(NPN)
td
0.07
0.05
0.03
0.02
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)
Figure 3. Turn−On Time
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3
20
30
VBB
−30 V
3.0
TO SCOPE
tr ≤ 20 ns
10
0
−11.0 V
0.3
RL
+9.0 V
TO SCOPE
tr ≤ 20 ns
10
tr ≤
20 ns
−30 V
+4.0 V
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
1000
(PNP)
(NPN)
t, TIME (s)
μ
3.0
ts
2.0
ts
1.0
0.7
0.5
0.3
0.2
0.1
0.3 0.5 0.7
500
200
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
hFE , DC CURRENT GAIN
10
7.0
5.0
tf
VCE = 4.0 V
TJ = 25°C
100
50
20
10
PNP
NPN
5.0
tf
2.0
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)
20
1.0
30
0.1
0.2
0.5
1.0
2.0
5.0 10
20
IC, COLLECTOR CURRENT (AMPS)
50
100
Figure 5. DC Current Gain
Figure 4. Turn−Off Time
100
FORWARD BIAS
IC, COLLECTOR CURRENT (AMPS)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TC = 25_C; T J(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC w 25_C. Second breakdown limitations do
not derate the same as thermal limitations.
300ms
50
30
20
10
10ms
5.0
2.0
dc
SECONDARY BREAKDOWN
THERMAL LIMIT
BONDING WIRE LIMIT
1.0
0.5
0.3
0.2
0
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives RBSOA characteristics.
TC = 25°C
1.0ms
TIP35A, 36A
TIP35B, 36B
TIP35C, 36C
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Maximum Rated Forward Bias
Safe Operating Area
IC, COLLECTOR CURRENT (AMPS)
40
TJ ≤ 100°C
30
25
20
TIP35C
TIP36C
15
TIP35B
TIP36B
10
TIP35A
TIP36A
5.0
0
0
10
20
30
50
70
90
40
60
80
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Maximum Rated Forward Bias
Safe Operating Area
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4
100
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
TEST CIRCUIT
VCE MONITOR
RBB1
MJE180
INPUT
L1
(SEE NOTE A)
TUT
20
L2
(SEE NOTE A)
50
RBB2 = 100
50
−
VCC = 10 V
+
IC MONITOR
VBB2 = 0
−
RS = 0.1 W
VBB1 = 10 V
+
VOLTAGE AND CURRENT WAVEFORMS
tw = 6.0 ms
(SEE NOTE B)
5.0 V
INPUT
VOLTAGE
0
100 ms
COLLECTOR
CURRENT
0
−3.0 A
0
−10 V
COLLECTOR
VOLTAGE
V(BR)CER
NOTES:
A. L1 and L2 are 10 mH, 0.11 W, Chicago Standard Transformer Corporation C−2688, or equivalent.
B. Input pulse width is increased until ICM = − 3.0 A.
C. For NPN, reverse all polarities.
Figure 8. Inductive Load Switching
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5
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
C
Q
B
U
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
4
A
L
1
K
2
3
D
J
H
MILLIMETERS
MIN
MAX
−−− 20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
−−− 16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
STYLE 1:
PIN 1.
2.
3.
4.
V
G
INCHES
MIN
MAX
−−− 0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
−−− 0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
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TIP35A/D