ONSEMI MJD18002D2

MJD18002D2
Bipolar NPN Transistor
High Speed, High Gain Bipolar NPN
Power Transistor with Integrated
Collector−Emitter Diode and Built−In
Efficient Antisaturation Network
The MJD18002D2 is a state−of−the−art high speed, high gain
bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no longer a need to
guarantee an hFE window.
Features
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POWER TRANSISTOR
2 AMPERES
1000 VOLTS, 50 WATTS
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
•
•
•
•
•
•
•
H2BIP Structure which Minimizes the Spread
Integrated Collector−Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCEsat
Characteristics Make It Suitable for PFC Application
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Six Sigma® Process Providing Tight and Reproductible Parameter
Spreads
Pb−Free Package is Available
4
1 2
3
DPAK
CASE 369C
STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
VCEO
450
Vdc
Collector−Base Breakdown Voltage
VCBO
1000
Vdc
Collector−Emitter Breakdown Voltage
VCES
1000
Vdc
Emitter−Base Voltage
VEBO
11
Vdc
IC
Adc
Collector Current
Collector Current
− Continuous
− Peak (Note 1)
ICM
2.0
5.0
Base Current
Base Current
− Continuous
− Peak (Note 1)
IB
IBM
1.0
2.0
Adc
Symbol
Value
Unit
PD
50
0.4
W
W/°C
TJ, Tstg
−65 to +150
°C
Thermal Resistance, Junction−to−Case
RqJC
5.0
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
71.4
°C/W
TL
260
°C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
MARKING DIAGRAM
YWW
180
02D2G
Y
WW
18002D2
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
MJD18002D2T4
MJD18002D2T4G
Package
Shipping †
DPAK
3000/Tape & Reel
DPAK
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MJD18002D2/D
MJD18002D2
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
450
570
−
Vdc
Collector−Base Breakdown Voltage (ICBO = 1 mA)
VCBO
1000
1100
−
Vdc
Emitter−Base Breakdown Voltage (IEBO = 1 mA)
VEBO
11
14
−
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
−
−
100
mAdc
ICES
−
−
−
−
−
−
100
500
100
mAdc
IEBO
−
−
500
mAdc
−
−
0.78
0.87
1.0
1.1
−
−
0.36
0.50
0.6
1.0
−
−
0.40
0.65
0.75
1.2
14
8.0
25
15
−
−
6.0
4.0
10
6.0
−
−
ft
−
13
−
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
−
50
100
pF
Input Capacitance (VEB = 8 Vdc)
Cib
−
340
500
pF
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
(VCE = 500 V, VEB = 0)
Emitter−Cutoff Current (VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
(IC = 1.0 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 25°C
VBE(sat)
Collector−Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
(IC = 1.0 Adc, IB = 0.2 Adc)
VCE(sat)
@ TC = 25°C
@ TC = 125°C
DC Current Gain
(IC = 0.4 Adc, VCE = 1.0 Vdc)
@ TC = 25°C
@ TC = 125°C
(IC = 1.0 Adc, VCE = 1.0 Vdc)
@ TC = 25°C
@ TC = 125°C
hFE
Vdc
Vdc
−
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
DIODE CHARACTERISTICS
VEC
Vdc
Forward Diode Voltage
(IEC = 1.0 Adc)
@ TC = 25°C
−
1.2
1.5
(IEC = 0.4 Adc)
@ TC = 25°C
−
1.0
1.3
@ TC = 125°C
−
0.6
−
tfr
ns
Forward Recovery Time
(IF = 0.4 Adc, di/dt = 10 A/ms)
@ TC = 25°C
−
517
−
(IF = 1.0 Adc, di/dt = 10 A/ms)
@ TC = 25°C
−
480
−
−
7.4
−
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation Voltage
Determinated 1 ms and 3 ms
respectively after rising IB1 reaches
90% of final IB1
IC = 0.4 Adc
IB1 = 40 mA
VCC = 300 Vdc
@ 1 ms
@ TC = 25°C
@ 3 ms
@ TC = 25°C
−
2.5
−
IC = 1 Adc
IB1 = 0.2 A
VCC = 300 Vdc
@ 1 ms
@ TC = 25°C
−
11.7
−
@ 3 ms
@ TC = 25°C
−
1.3
−
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2
VCE(dsat)
V
MJD18002D2
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
@ TC = 25°C
@ TC = 125°C
ton
−
−
225
375
350
−
ns
@ TC = 25°C
@ TC = 125°C
toff
0.8
−
−
1.5
1.1
−
ms
@ TC = 25°C
@ TC = 125°C
ton
−
−
100
94
150
−
ns
@ TC = 25°C
@ TC = 125°C
toff
0.95
−
−
1.5
1.25
−
ms
−
−
130
120
175
−
ns
0.4
−
−
0.7
0.7
−
ms
−
−
110
100
175
−
ns
SWITCHING CHARACTERISTICS: Resistive Load (D.C.S. 10%, Pulse Width = 40 ms)
Turn−on Time
Turn−off Time
IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 200 mAdc
VCC = 300 Vdc
Turn−on Time
Turn−off Time
IC = 1.0 Adc, IB1 = 0.2 Adc
IB2 = 0.5 Adc
VCC = 300 Vdc
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)
Fall Time
@ TC = 25°C
tf
@ TC = 125°C
IC = 0.4 Adc
Storage Time
@ TC = 25°C
ts
IB1 = 40 mAdc
@ TC = 125°C
IB2 = 0.2 Adc
Cross−over Time
@ TC = 25°C
tc
@ TC = 125°C
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
−
−
130
140
175
−
ns
@ TC = 25°C
@ TC = 125°C
ts
2.1
−
−
3.0
2.4
−
ms
Cross−over Time
@ TC = 25°C
@ TC = 125°C
tc
−
−
275
350
350
−
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
−
−
100
100
150
−
ns
@ TC = 25°C
@ TC = 125°C
ts
−
−
1.05
1.45
1.2
−
ms
@ TC = 25°C
@ TC = 125°C
tc
−
−
100
115
150
−
ns
Storage Time
Storage Time
IC = 0.8 Adc
IB1 = 160 mAdc
IB2 = 160 mAdc
IC = 1.0 Adc
IB1 = 0.2 Adc
IB2 = 0.5 Adc
Cross−over Time
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3
MJD18002D2
Typical Static Characteristics
100
100
80
60
VCE = 5 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 1 V
TJ = 125°C
25°C
40
−20°C
20
0
80
TJ = 125°C
60
25°C
40
−20°C
20
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 V
Figure 2. DC Current Gain @ 5 V
4
100
IC/IB = 20
VCE, VOLTAGE (VOLTS)
VCE, VOLTAGE (VOLTS)
TJ = 25°C
3
2A
1A
1.5 A
2
400 mA
1
10
1
25°C
TJ = 125°C
IC = 200 mA
0
−20°C
0.1
0.001
0.01
0.1
1
IB, BASE CURRENT (AMPS)
10
0.001
Figure 3. Collector Saturation Region
10
10
IC/IB = 10
IC/IB = 5
VCE, VOLTAGE (VOLTS)
VCE, VOLTAGE (VOLTS)
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Collector−Emitter Saturation Voltage
100
10
1
TJ = 125°C
0.1
10
−20°C
0.001
25°C
1
TJ = 125°C
0.1
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 5. Collector−Emitter Saturation Voltage
−20°C
0.001
25°C
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 6. Collector−Emitter Saturation Voltage
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4
MJD18002D2
Typical Static Characteristics
10
10
IC/IB = 10
VBE, VOLTAGE (VOLTS)
VBE, VOLTAGE (VOLTS)
IC/IB = 5
1 −20°C
25°C
TJ = 125°C
0.1
1 −20°C
25°C
TJ = 125°C
0.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
0.001
10
Figure 7. Base−Emitter Saturation Region
IC/IB = 5
FORWARD DIODE VOLTAGE (VOLTS)
VBE, VOLTAGE (VOLTS)
IC/IB = 20
1 −20°C
25°C
TJ = 125°C
0.1
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 8. Base−Emitter Saturation Region
IC/IB = 10
10
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
10
1
VEC(V) = −20°C
125°C
0.1
25°C
0.01
0.1
1
10
REVERSE EMITTER−COLLECTOR CURRENT (AMPS)
Figure 9. Base−Emitter Saturation Region
IC/IB = 20
Figure 10. Forward Diode Voltage
Typical Switching Characteristics
1000
3000
TJ = 125°C
TJ = 25°C
2500
100
Cob (pF)
10
t, TIME (ms)
C, CAPACITANCE (pF)
Cib (pF)
TJ = 25°C
f(test) = 1 MHz
2000
IBon = IBoff
IC/IB = 10
VCC = 300 V
PW = 40 ms
1500
1000
500
IC/IB = 5
1
0
1
10
VR, REVERSE VOLTAGE (VOLTS)
100
0.1
Figure 11. Capacitance
0.4
0.7
1
1.3
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Resistive Switch Time, ton
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5
1.6
MJD18002D2
Typical Switching Characteristics
5.5
3
TJ = 125°C
TJ = 25°C
5.0
TJ = 125°C
VCC = 300 V
PW = 40 ms
2.5
t, TIME (ms)
4.5
t, TIME (ms)
IBon = IBoff
4.0
IC/IB = 10
3.5
3.0
IC/IB = 5
2.5
TJ = 25°C
2
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
1.5
2.0
1.5
1
0.1
0.4
0.7
1
1.3
IC, COLLECTOR CURRENT (AMPS)
1.6
0
Figure 13. Resistive Switch Time, toff
1.5
Figure 14. Inductive Storage Time, tsi @ IC/IB = 5
700
4
TJ = 125°C
TJ = 25°C
600
3
tc
t, TIME (ms)
400
TJ = 125°C
TJ = 25°C
IC/IBon = 5
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
500
t, TIME (ms)
0.5
1
IC, COLLECTOR CURRENT (AMPS)
300
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
IC = 1 A
2
tfi
200
IC = 300 mA
1
100
0
0
0.5
1
IC, COLLECTOR CURRENT (AMPS)
0
1.5
3
Figure 15. Inductive Switching, tc & tfi @ IC/IB = 5
6
9
hFE, FORCED GAIN
12
15
Figure 16. Inductive Storage Time
1000
1800
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
600
IC = 1 A
t, TIME (ms)
tfi, FALL TIME (ns)
800
400
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
1200
IC = 1 A
600
IC = 0.3 A
200
IC = 0.3 A
0
3
5
7
9
11
hFE, FORCED GAIN
13
0
15
3
Figure 17. Inductive Fall Time
6
9
hFE, FORCED GAIN
12
Figure 18. Inductive Cross−Over Time
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6
15
MJD18002D2
Typical Switching Characteristics
1600
1.6
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
IC/IB = 5
TJ = 125°C
TJ = 25°C
1.2
t, TIME (ms)
t, TIME (ms)
1200
tc
800
0.8
tfi
400
0.4
TJ = 125°C
TJ = 25°C
0
IC/IB = 10
0
0.3
0.7
1.1
IC, COLLECTOR CURRENT (AMPS)
1.5
0
Figure 19. Inductive Switching Time,
tfi & TC @ G = 10
0.5
1
IC, COLLECTOR CURRENT (AMPS)
1.5
Figure 20. Inductive Switching Time, tsi
200
300
TJ = 125°C
TJ = 25°C
IBoff = IC/2,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
150
IC/IB = 5
100
IBoff = IC/2,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
250
t, TIME (ms)
t, TIME (ms)
IBoff = IC/2,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
TJ = 125°C
TJ = 25°C
IC/IB = 10
200
150
100
IC/IB = 10
50
IC/IB = 5
0.5
1
IC, COLLECTOR CURRENT (AMPS)
0
50
1.5
0
Figure 21. Inductive Storage Time, tfi
0.5
1
IC, COLLECTOR CURRENT (AMPS)
Figure 22. Inductive Storage Time, tc
CROSS−OVER TIME (ns)
2.4
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
2.2
2.0
IB = 200 mA
IB = 50 mA
1.8
IB = 500 mA
1.6
IB = 100 mA
1.4
1.2
1
0
0.4
0.8
hFE, FORCED GAIN
1.2
1.6
Figure 23. Inductive Storage Time, tsi
Figure 24. Dynamic Saturation Voltage
Measurements
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7
1.5
MJD18002D2
Typical Switching Characteristics
10
IC
9
90% IC
tfi
8
tsi
7
6
10% Vclamp
Vclamp
5
4
90% IB1
IB
3
10% IC
tc
2
1
0
0
1
2
3
4
TIME
6
5
8
7
Figure 25. Inductive Switching Measurements
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 mF
150 W
3W
100 W
3W
MTP8P10
VCE PEAK
VCE
MTP8P10
RB1
MPF930
MUR105
MPF930
+10 V
IC PEAK
100 mF
IB1
Iout
IB
A
COMMON
50
W
MJE210
500 mF
150 W
3W
IB2
RB2
MTP12N10
1 mF
−Voff
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8
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
Inductive Switching
L = 200 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
MJD18002D2
VFR (1.1 VF) Unless
Otherwise Specified
VF
10
8
VF
0.1 VF
tfr
6
IF
4
10% IF
2
0
10
10 ms
DC
1
1 ms
50 ms
0.1
0.01
0
2
4
6
8
10
10
Figure 26. tfr Measurement
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 27. Forward Bias Safe Operating Area
1
2.5
TC = 125°C
Gain = 4
LC = 500 mH
2
POWER DERATING FACTOR
IC, COLLECTOR CURRENT (AMPS)
5 ms
1 ms
EXTENDED SOA
VFRM
IC, COLLECTOR CURRENT (AMPS)
12
1.5
VBE(off) = −1.5 V
1
VBE(off) = −5 V
0.5
Second Breakdown Derating
0.8
0.6
Thermal Derating
0.4
0.2
VBE = 0 V
0
0
0
600
200
400
800
1000
1200
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
20
Figure 28. Reverse Bias Safe Operating Area
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 29. Forward Bias Power Derating
Figure 27 may be found at any case temperature by using the
appropriate curve on Figure 29.
TJ(pk) may be calculated from the data in Figure 30. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn−off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 28). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC−VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 27 is
based on TC = 25°C; TJ(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25°C. Second
Breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
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9
MJD18002D2
r(t) TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
0.5
0.2
0.1
0.05
0.1
P(pk)
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
RqJC(t) = r(t) RqJC
RqJC = 55°/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk)RqJC(t)
0.01
0.01
0.1
1
10
100
1000
t, TIME (ms)
Figure 30. Typical Thermal Response (ZqJC(t)) for MJD18002D2
1100
440
BVCER (Volts) @ 10 mA
1000
di/dt = 10 A/ms
TC = 25°C
420
900
400
TJ = 25°C
800
380
360
700
600
340
BVCER(sus) @ 200 mA
320
500
400
300
10
100
1000
RBE ()
10,000
100,000
0
Figure 31. BVCER
0.5
1
1.5
IF, FORWARD CURRENT (AMPS)
Figure 32. Forward Recovery Time, tfr
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10
2
MJD18002D2
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Six Sigma is a registered trademark and servicemark of Motorola, Inc.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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MJD18002D2/D