MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no longer a need to guarantee an hFE window. Features http://onsemi.com POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due to the • • • • • • • H2BIP Structure which Minimizes the Spread Integrated Collector−Emitter Free Wheeling Diode Fully Characterized and Guaranteed Dynamic VCEsat Characteristics Make It Suitable for PFC Application Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Six Sigma® Process Providing Tight and Reproductible Parameter Spreads Pb−Free Package is Available 4 1 2 3 DPAK CASE 369C STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 450 Vdc Collector−Base Breakdown Voltage VCBO 1000 Vdc Collector−Emitter Breakdown Voltage VCES 1000 Vdc Emitter−Base Voltage VEBO 11 Vdc IC Adc Collector Current Collector Current − Continuous − Peak (Note 1) ICM 2.0 5.0 Base Current Base Current − Continuous − Peak (Note 1) IB IBM 1.0 2.0 Adc Symbol Value Unit PD 50 0.4 W W/°C TJ, Tstg −65 to +150 °C Thermal Resistance, Junction−to−Case RqJC 5.0 °C/W Thermal Resistance, Junction−to−Ambient RqJA 71.4 °C/W TL 260 °C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 seconds Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 2 1 MARKING DIAGRAM YWW 180 02D2G Y WW 18002D2 G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device MJD18002D2T4 MJD18002D2T4G Package Shipping † DPAK 3000/Tape & Reel DPAK (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MJD18002D2/D MJD18002D2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 450 570 − Vdc Collector−Base Breakdown Voltage (ICBO = 1 mA) VCBO 1000 1100 − Vdc Emitter−Base Breakdown Voltage (IEBO = 1 mA) VEBO 11 14 − Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO − − 100 mAdc ICES − − − − − − 100 500 100 mAdc IEBO − − 500 mAdc − − 0.78 0.87 1.0 1.1 − − 0.36 0.50 0.6 1.0 − − 0.40 0.65 0.75 1.2 14 8.0 25 15 − − 6.0 4.0 10 6.0 − − ft − 13 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Cob − 50 100 pF Input Capacitance (VEB = 8 Vdc) Cib − 340 500 pF Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25°C @ TC = 125°C @ TC = 125°C (VCE = 500 V, VEB = 0) Emitter−Cutoff Current (VEB = 10 Vdc, IC = 0) ON CHARACTERISTICS Base−Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) (IC = 1.0 Adc, IB = 0.2 Adc) @ TC = 25°C @ TC = 25°C VBE(sat) Collector−Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) @ TC = 25°C @ TC = 125°C (IC = 1.0 Adc, IB = 0.2 Adc) VCE(sat) @ TC = 25°C @ TC = 125°C DC Current Gain (IC = 0.4 Adc, VCE = 1.0 Vdc) @ TC = 25°C @ TC = 125°C (IC = 1.0 Adc, VCE = 1.0 Vdc) @ TC = 25°C @ TC = 125°C hFE Vdc Vdc − DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) DIODE CHARACTERISTICS VEC Vdc Forward Diode Voltage (IEC = 1.0 Adc) @ TC = 25°C − 1.2 1.5 (IEC = 0.4 Adc) @ TC = 25°C − 1.0 1.3 @ TC = 125°C − 0.6 − tfr ns Forward Recovery Time (IF = 0.4 Adc, di/dt = 10 A/ms) @ TC = 25°C − 517 − (IF = 1.0 Adc, di/dt = 10 A/ms) @ TC = 25°C − 480 − − 7.4 − DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage Determinated 1 ms and 3 ms respectively after rising IB1 reaches 90% of final IB1 IC = 0.4 Adc IB1 = 40 mA VCC = 300 Vdc @ 1 ms @ TC = 25°C @ 3 ms @ TC = 25°C − 2.5 − IC = 1 Adc IB1 = 0.2 A VCC = 300 Vdc @ 1 ms @ TC = 25°C − 11.7 − @ 3 ms @ TC = 25°C − 1.3 − http://onsemi.com 2 VCE(dsat) V MJD18002D2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit @ TC = 25°C @ TC = 125°C ton − − 225 375 350 − ns @ TC = 25°C @ TC = 125°C toff 0.8 − − 1.5 1.1 − ms @ TC = 25°C @ TC = 125°C ton − − 100 94 150 − ns @ TC = 25°C @ TC = 125°C toff 0.95 − − 1.5 1.25 − ms − − 130 120 175 − ns 0.4 − − 0.7 0.7 − ms − − 110 100 175 − ns SWITCHING CHARACTERISTICS: Resistive Load (D.C.S. 10%, Pulse Width = 40 ms) Turn−on Time Turn−off Time IC = 0.4 Adc, IB1 = 40 mAdc IB2 = 200 mAdc VCC = 300 Vdc Turn−on Time Turn−off Time IC = 1.0 Adc, IB1 = 0.2 Adc IB2 = 0.5 Adc VCC = 300 Vdc SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time @ TC = 25°C tf @ TC = 125°C IC = 0.4 Adc Storage Time @ TC = 25°C ts IB1 = 40 mAdc @ TC = 125°C IB2 = 0.2 Adc Cross−over Time @ TC = 25°C tc @ TC = 125°C Fall Time @ TC = 25°C @ TC = 125°C tf − − 130 140 175 − ns @ TC = 25°C @ TC = 125°C ts 2.1 − − 3.0 2.4 − ms Cross−over Time @ TC = 25°C @ TC = 125°C tc − − 275 350 350 − ns Fall Time @ TC = 25°C @ TC = 125°C tf − − 100 100 150 − ns @ TC = 25°C @ TC = 125°C ts − − 1.05 1.45 1.2 − ms @ TC = 25°C @ TC = 125°C tc − − 100 115 150 − ns Storage Time Storage Time IC = 0.8 Adc IB1 = 160 mAdc IB2 = 160 mAdc IC = 1.0 Adc IB1 = 0.2 Adc IB2 = 0.5 Adc Cross−over Time http://onsemi.com 3 MJD18002D2 Typical Static Characteristics 100 100 80 60 VCE = 5 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V TJ = 125°C 25°C 40 −20°C 20 0 80 TJ = 125°C 60 25°C 40 −20°C 20 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 V Figure 2. DC Current Gain @ 5 V 4 100 IC/IB = 20 VCE, VOLTAGE (VOLTS) VCE, VOLTAGE (VOLTS) TJ = 25°C 3 2A 1A 1.5 A 2 400 mA 1 10 1 25°C TJ = 125°C IC = 200 mA 0 −20°C 0.1 0.001 0.01 0.1 1 IB, BASE CURRENT (AMPS) 10 0.001 Figure 3. Collector Saturation Region 10 10 IC/IB = 10 IC/IB = 5 VCE, VOLTAGE (VOLTS) VCE, VOLTAGE (VOLTS) 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 4. Collector−Emitter Saturation Voltage 100 10 1 TJ = 125°C 0.1 10 −20°C 0.001 25°C 1 TJ = 125°C 0.1 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 5. Collector−Emitter Saturation Voltage −20°C 0.001 25°C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 6. Collector−Emitter Saturation Voltage http://onsemi.com 4 MJD18002D2 Typical Static Characteristics 10 10 IC/IB = 10 VBE, VOLTAGE (VOLTS) VBE, VOLTAGE (VOLTS) IC/IB = 5 1 −20°C 25°C TJ = 125°C 0.1 1 −20°C 25°C TJ = 125°C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0.001 10 Figure 7. Base−Emitter Saturation Region IC/IB = 5 FORWARD DIODE VOLTAGE (VOLTS) VBE, VOLTAGE (VOLTS) IC/IB = 20 1 −20°C 25°C TJ = 125°C 0.1 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 8. Base−Emitter Saturation Region IC/IB = 10 10 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 10 1 VEC(V) = −20°C 125°C 0.1 25°C 0.01 0.1 1 10 REVERSE EMITTER−COLLECTOR CURRENT (AMPS) Figure 9. Base−Emitter Saturation Region IC/IB = 20 Figure 10. Forward Diode Voltage Typical Switching Characteristics 1000 3000 TJ = 125°C TJ = 25°C 2500 100 Cob (pF) 10 t, TIME (ms) C, CAPACITANCE (pF) Cib (pF) TJ = 25°C f(test) = 1 MHz 2000 IBon = IBoff IC/IB = 10 VCC = 300 V PW = 40 ms 1500 1000 500 IC/IB = 5 1 0 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 0.1 Figure 11. Capacitance 0.4 0.7 1 1.3 IC, COLLECTOR CURRENT (AMPS) Figure 12. Resistive Switch Time, ton http://onsemi.com 5 1.6 MJD18002D2 Typical Switching Characteristics 5.5 3 TJ = 125°C TJ = 25°C 5.0 TJ = 125°C VCC = 300 V PW = 40 ms 2.5 t, TIME (ms) 4.5 t, TIME (ms) IBon = IBoff 4.0 IC/IB = 10 3.5 3.0 IC/IB = 5 2.5 TJ = 25°C 2 IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH 1.5 2.0 1.5 1 0.1 0.4 0.7 1 1.3 IC, COLLECTOR CURRENT (AMPS) 1.6 0 Figure 13. Resistive Switch Time, toff 1.5 Figure 14. Inductive Storage Time, tsi @ IC/IB = 5 700 4 TJ = 125°C TJ = 25°C 600 3 tc t, TIME (ms) 400 TJ = 125°C TJ = 25°C IC/IBon = 5 IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH 500 t, TIME (ms) 0.5 1 IC, COLLECTOR CURRENT (AMPS) 300 IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH IC = 1 A 2 tfi 200 IC = 300 mA 1 100 0 0 0.5 1 IC, COLLECTOR CURRENT (AMPS) 0 1.5 3 Figure 15. Inductive Switching, tc & tfi @ IC/IB = 5 6 9 hFE, FORCED GAIN 12 15 Figure 16. Inductive Storage Time 1000 1800 TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH 600 IC = 1 A t, TIME (ms) tfi, FALL TIME (ns) 800 400 IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH 1200 IC = 1 A 600 IC = 0.3 A 200 IC = 0.3 A 0 3 5 7 9 11 hFE, FORCED GAIN 13 0 15 3 Figure 17. Inductive Fall Time 6 9 hFE, FORCED GAIN 12 Figure 18. Inductive Cross−Over Time http://onsemi.com 6 15 MJD18002D2 Typical Switching Characteristics 1600 1.6 IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH IC/IB = 5 TJ = 125°C TJ = 25°C 1.2 t, TIME (ms) t, TIME (ms) 1200 tc 800 0.8 tfi 400 0.4 TJ = 125°C TJ = 25°C 0 IC/IB = 10 0 0.3 0.7 1.1 IC, COLLECTOR CURRENT (AMPS) 1.5 0 Figure 19. Inductive Switching Time, tfi & TC @ G = 10 0.5 1 IC, COLLECTOR CURRENT (AMPS) 1.5 Figure 20. Inductive Switching Time, tsi 200 300 TJ = 125°C TJ = 25°C IBoff = IC/2, VCC = 15 V, VZ = 300 V LC = 200 mH 150 IC/IB = 5 100 IBoff = IC/2, VCC = 15 V, VZ = 300 V LC = 200 mH 250 t, TIME (ms) t, TIME (ms) IBoff = IC/2, VCC = 15 V, VZ = 300 V LC = 200 mH TJ = 125°C TJ = 25°C IC/IB = 10 200 150 100 IC/IB = 10 50 IC/IB = 5 0.5 1 IC, COLLECTOR CURRENT (AMPS) 0 50 1.5 0 Figure 21. Inductive Storage Time, tfi 0.5 1 IC, COLLECTOR CURRENT (AMPS) Figure 22. Inductive Storage Time, tc CROSS−OVER TIME (ns) 2.4 IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH 2.2 2.0 IB = 200 mA IB = 50 mA 1.8 IB = 500 mA 1.6 IB = 100 mA 1.4 1.2 1 0 0.4 0.8 hFE, FORCED GAIN 1.2 1.6 Figure 23. Inductive Storage Time, tsi Figure 24. Dynamic Saturation Voltage Measurements http://onsemi.com 7 1.5 MJD18002D2 Typical Switching Characteristics 10 IC 9 90% IC tfi 8 tsi 7 6 10% Vclamp Vclamp 5 4 90% IB1 IB 3 10% IC tc 2 1 0 0 1 2 3 4 TIME 6 5 8 7 Figure 25. Inductive Switching Measurements Table 1. Inductive Load Switching Drive Circuit +15 V 1 mF 150 W 3W 100 W 3W MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 MUR105 MPF930 +10 V IC PEAK 100 mF IB1 Iout IB A COMMON 50 W MJE210 500 mF 150 W 3W IB2 RB2 MTP12N10 1 mF −Voff http://onsemi.com 8 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA Inductive Switching L = 200 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 MJD18002D2 VFR (1.1 VF) Unless Otherwise Specified VF 10 8 VF 0.1 VF tfr 6 IF 4 10% IF 2 0 10 10 ms DC 1 1 ms 50 ms 0.1 0.01 0 2 4 6 8 10 10 Figure 26. tfr Measurement 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 27. Forward Bias Safe Operating Area 1 2.5 TC = 125°C Gain = 4 LC = 500 mH 2 POWER DERATING FACTOR IC, COLLECTOR CURRENT (AMPS) 5 ms 1 ms EXTENDED SOA VFRM IC, COLLECTOR CURRENT (AMPS) 12 1.5 VBE(off) = −1.5 V 1 VBE(off) = −5 V 0.5 Second Breakdown Derating 0.8 0.6 Thermal Derating 0.4 0.2 VBE = 0 V 0 0 0 600 200 400 800 1000 1200 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 20 Figure 28. Reverse Bias Safe Operating Area 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 160 Figure 29. Forward Bias Power Derating Figure 27 may be found at any case temperature by using the appropriate curve on Figure 29. TJ(pk) may be calculated from the data in Figure 30. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 28). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 27 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second Breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on http://onsemi.com 9 MJD18002D2 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 0.1 0.05 0.1 P(pk) 0.02 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 55°/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk)RqJC(t) 0.01 0.01 0.1 1 10 100 1000 t, TIME (ms) Figure 30. Typical Thermal Response (ZqJC(t)) for MJD18002D2 1100 440 BVCER (Volts) @ 10 mA 1000 di/dt = 10 A/ms TC = 25°C 420 900 400 TJ = 25°C 800 380 360 700 600 340 BVCER(sus) @ 200 mA 320 500 400 300 10 100 1000 RBE () 10,000 100,000 0 Figure 31. BVCER 0.5 1 1.5 IF, FORWARD CURRENT (AMPS) Figure 32. Forward Recovery Time, tfr http://onsemi.com 10 2 MJD18002D2 PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Six Sigma is a registered trademark and servicemark of Motorola, Inc. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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