ONSEMI MJE18002G

MJE18002G
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE18002G have an applications specific state−of−the−art die
designed for use in 220 V line operated Switchmode Power supplies
and electronic light ballasts.
Features
• Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain hFE
Fast Switching
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)
Tight Parametric Distributions are Consistent Lot−to−Lot
Standard TO−220
These Devices are Pb−Free and are RoHS Compliant*
♦
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POWER TRANSISTOR
2.0 AMPERES
100 VOLTS − 50 WATTS
♦
•
•
•
TO−220AB
CASE 221A−09
STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
Rating
VCEO
450
Vdc
Collector−Emitter Breakdown Voltage
VCES
1000
Vdc
Emitter−Base Voltage
VEBO
9.0
Vdc
Collector Current
− Continuous
− Peak (Note 1)
IC
ICM
2.0
5.0
Adc
Base Current
− Continuous
− Peak (Note 1)
IB
IBM
1.0
2.0
Adc
PD
50
0.4
W
W/_C
TJ, Tstg
−65 to 150
_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Operating and Storage Temperature
1
2
3
MARKING DIAGRAM
MJE18002G
AY WW
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristics
RqJC
2.5
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
MJE18002G
Package
Shipping
TO−220
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 7
1
Publication Order Number:
MJE18002/D
MJE18002G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
VCEO(sus)
450
−
−
Vdc
ICEO
−
−
100
mAdc
ICES
−
−
−
−
−
−
100
500
100
mAdc
IEBO
−
−
100
mAdc
Base−Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc)
Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc)
VBE(sat)
−
−
0.825
0.92
1.1
1.25
Vdc
Collector−Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
VCE(sat)
−
−
−
−
0.2
0.2
0.25
0.3
0.5
0.5
0.5
0.6
hFE
14
−
11
11
6.0
5.0
10
−
27
17
20
8.0
8.0
20
34
−
−
−
−
−
−
−
fT
−
13
−
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
−
35
60
pF
Input Capacitance
(VEB = 8.0 V)
Cib
−
400
600
pF
VCE(dsat)
−
−
3.5
8.0
−
−
Vdc
@ TC = 125°C
−
−
1.5
3.8
−
−
@ TC = 125°C
−
−
8.0
14
−
−
@ TC = 125°C
−
−
2.0
7.0
−
−
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current (VCE = 800 V, VEB = 0)
TC = 125°C
TC = 125°C
Emitter Cutoff Current
(VEB = 9.0 Vdc, IC = 0)
ON CHARACTERISTICS
@ TC = 125°C
(IC = 1.0 Adc, IB = 0.2 Adc)
@ TC = 125°C
DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc)
@ TC = 125°C
DC Current Gain (IC = 0.4 Adc, VCE = 1.0 Vdc)
@ TC = 125°C
DC Current Gain (IC = 1.0 Adc, VCE = 1.0 Vdc)
@ TC = 125°C
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Dynamic Saturation:
determined 1.0 ms and
3.0 ms after rising IB1
reach 0.9 final IB1
(see Figure 18)
IC = 0.4 A
IB1 = 40 mA
VCC = 300 V
1.0 ms
IC = 1.0 A
IB1 = 0.2 A
VCC = 300 V
1.0 ms
3.0 ms
3.0 ms
@ TC = 125°C
2. Proper strike and creepage distance must be provided.
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2
MJE18002G
ELECTRICAL CHARACTERISTICS − continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ton
−
−
200
130
300
−
ns
toff
−
−
1.2
1.5
2.5
−
ms
ton
−
−
85
95
150
−
ns
toff
−
−
1.7
2.1
2.5
−
ms
tfi
−
−
125
120
200
−
ns
tsi
−
−
0.7
0.8
1.25
−
ms
tc
−
−
110
110
200
−
ns
tfi
−
−
110
120
175
−
ns
tsi
−
−
1.7
2.25
2.75
−
ms
tc
−
−
200
250
300
−
ns
tfi
−
−
140
185
200
−
ns
tsi
−
−
2.2
2.5
3.0
−
ms
tc
−
−
140
220
250
−
ns
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms)
Turn−On Time
Turn−Off Time
Turn−On Time
Turn−Off Time
IC = 0.4 Adc
IB1 = 40 mAdc
IB2 = 0.2 Adc
VCC = 300 V
IC = 1.0 Adc
IB1 = 0.2 Adc
IB2 = 0.5 Adc
VCC = 300 V
@ TC = 125°C
@ TC = 125°C
@ TC = 125°C
@ TC = 125°C
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)
Fall Time
IC = 0.4 Adc, IB1 = 40 mAdc,
IB2 = 0.2 Adc
@ TC = 125°C
Storage Time
@ TC = 125°C
Crossover Time
@ TC = 125°C
Fall Time
IC = 1.0 Adc, IB1 = 0.2 Adc,
IB2 = 0.5 Adc
@ TC = 125°C
Storage Time
@ TC = 125°C
Crossover Time
@ TC = 125°C
Fall Time
IC = 0.4 Adc, IB1 = 50 mAdc,
IB2 = 50 mAdc
@ TC = 125°C
Storage Time
@ TC = 125°C
Crossover Time
@ TC = 125°C
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MJE18002G
TYPICAL STATIC CHARACTERISTICS
100
VCE = 1 V
TJ = 125°C
h FE, DC CURRENT GAIN
h FE, DC CURRENT GAIN
100
TJ = 25°C
10
1
0.01
0.01
0.10
1.00
0.10
1.00
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
10
VCE = 5 V
TJ = -20°C
1
0.01
0.01
10.00
10.00
TJ = 25°C
0.10
1.00
0.10
1.00
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
10.00
10.00
Figure 2. DC Current Gain @ 5 Volts
2
10.00
1
2A
1.5 A
1A
V CE , VOLTAGE (VOLTS)
V CE , VOLTAGE (VOLTS)
TJ = 25°C
1.00
0.10
IC/IB = 10
IC/IB = 5
0.4 A
TJ = 25°C
TJ = 125°C
IC = 0.2 A
0
0.001
0.001
0.010
0.100
0.010
0.100
IB, BASE CURRENT (mA)
1.000
1.000
0.01
0.01
0.01
Figure 3. Collector Saturation Region
0.10
1.00
0.10
1.00
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Collector−Emitter Saturation Voltage
1.1
1000
1.0
Cib
0.9
C, CAPACITANCE (pF)
V BE, VOLTAGE (VOLTS)
10.00
10.00
0.8
TJ = 25°C
0.7
0.6
100
10
Cob
TJ = 125°C
IC/IB = 10
IC/IB = 5
0.5
0.4
0.01
0.01
TJ = 25°C
f = 1 MHz
0.10
1.00
0.10
1.00
IC, COLLECTOR CURRENT (AMPS)
10.00
10.00
1
11
Figure 5. Base−Emitter Saturation Region
10
100
10
100
VCE, COLLECTOR-EMITTER (VOLTS)
Figure 6. Capacitance
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4
1000
1000
MJE18002G
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
2500
4500
IB(off) = IC/2
VCC = 300 V
PW = 20 ms
IB(off) = IC/2
VCC = 300 V
PW = 20 ms
IC/IB = 5
3500
3000
1500
TJ = 125°C
IC/IB = 5
IC/IB = 10
1000
t, TIME (ns)
t, TIME (ns)
2000
4000
TJ = 25°C
TJ = 125°C
2500
2000
IC/IB = 10
1500
TJ = 25°C
1000
500
500
0
0.4
0.4
0.6
0.6
0.8
1.0
1.2
1.4
1.6
0.8
1.0
1.2
1.4
1.6
IC, COLLECTOR CURRENT (AMPS)
1.8
1.8
2.0
2.0
0
0.4
0.4
0.6
0.6
Figure 7. Resistive Switching, ton
t si, STORAGE TIME (ns)
t, TIME (ns)
2000
IC/IB = 5
1000
500
TJ = 25°C
TJ = 125°C
IC/IB = 10
0.6
0.6
0.8
1.0
1.2
1.4
1.6
0.8
1.0
1.2
1.4
1.6
IC, COLLECTOR CURRENT (AMPS)
1.8
1.8
1500
1000
500
2.0
2.0
IC = 0.4 A
0
55
77
Figure 9. Inductive Storage Time, tsi
tc
350
300
t, TIME (ns)
t, TIME (ns)
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
400
tfi
300
tc
200
11
99
11
hFE, FORCED GAIN
13
13
tc
tfi
TJ = 25°C
TJ = 125°C
250
200
150
tfi
100
0.6
0.8
1.0
1.2
1.4
1.6
1.2
1.4
1.6
IC, COLLECTOR CURRENT (AMPS)
tc
100
TJ = 25°C
TJ = 125°C
0
0.4
0.4
15
15
450
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
400
TJ = 25°C
TJ = 125°C
Figure 10. Inductive Storage Time
600
500
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
IC = 1 A
1500
0
0.4
0.4
2.0
2.0
2500
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
2000
1.8
1.8
Figure 8. Resistive Switching, toff
3000
2500
0.8
1.0
1.2
1.4
1.6
0.8
1.0
1.2
1.4
1.6
IC, COLLECTOR CURRENT (AMPS)
1.8
1.8
tfi
50
2.0
Figure 11. Inductive Switching, tc and tfi, IC/IB = 5
0
0.4
0.4
0.6
1.2
1.4
1.6
0.8
1.0
1.2
1.4
1.6
IC, COLLECTOR CURRENT (AMPS)
1.8
1.8
2.0
Figure 12. Inductive Switching, tc and tfi, IC/IB = 10
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MJE18002G
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
250
180
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
140
230
IC = 0.4 A
120
100
IC = 1 A
TJ = 25°C
TJ = 125°C
80
60
55
66
77
88
190
170
150
130
110
IC = 0.4 A
90
TJ = 25°C
TJ = 125°C
70
99
10
11
10
11
hFE, FORCED GAIN
12
12
13
13
14
14
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
IC = 1 A
210
TC, CROSS‐OVER TIME (ns)
t fi , FALL TIME (ns)
160
50
55
15
15
6
Figure 13. Inductive Fall Time
77
8
9
10
11
11
hFE, FORCED GAIN
12
13
14
15
15
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
2.5
10.00
1ms
50ms
10ms 1ms
I C, COLLECTOR CURRENT (AMPS)
I C, COLLECTOR CURRENT (AMPS)
5ms
DC (MJE18002)
1.00
0.10
0.01
10
10
100
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
POWER DERATING FACTOR
0.6
0.4
0.0
20
THERMAL
DERATING
40
60
80
100
120
100
120
TC, CASE TEMPERATURE (°C)
140
140
VBE(off) = 0.5 V
0.5
0V
-1.5 V
200
400
600
800
1000
800
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1200
1200
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC−VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate. The
data of Figure 15 is based on TC = 25°C; TJ(pk) is variable
depending on power level. Second breakdown pulse limits are valid
for duty cycles to 10% but must be derated when TC > 25°C. Second
breakdown limitations do not derate the same as thermal limitations.
Allowable current at the voltages shown on Figure 15 may be found
at any case temperature by using the appropriate curve on Figure 17.
TJ(pk) may be calculated from the data in Figures 20. At any case
temperatures, thermal limitations will reduce the power that can be
handled to values less the limitations imposed by second
breakdown. For inductive loads, high voltage and current must be
sustained simultaneously during turn−off with the base to emitter
junction reverse biased. The safe level is specified as a reverse
biased safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to an
avalanche mode.
SECOND
BREAKDOWN
DERATING
0.2
1.0
Figure 16. Reverse Bias Switching Safe Operating Area
1.0
0.8
1.5
0.0
0
1000
1000
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 mH
2.0
160
Figure 17. Forward Bias Power Derating
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6
MJE18002G
10
5
VCE
4
dyn 1 ms
3
8
2
VOLTS
90% IC
tfi
IC
9
tsi
7
dyn 3 ms
1
6
0
5
TC
VCLAMP
10% IC
10% VCLAMP
4
-1
90% IB
-2
1 ms
-3
-4
90% IB1
2
3 ms
IB
-5
0
IB
3
1
0
1
2
3
4
TIME
5
6
7
0
8
1
Figure 18. Dynamic Saturation Voltage Measurements
2
3
4
TIME
5
6
7
8
Figure 19. Inductive Switching Measurements
+15 V
1 mF
150 W
3V
100 W
3V
IC PEAK
100 mF
MTP8P10
VCE PEAK
VCE
MTP8P10
Rb1
MPF930
IB1
MUR105
MPF930
+10 V
Iout
IB
A
IB2
50 W
Rb2
MJE210
COMMON
150 W
3V
500 mF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 VOLTS
IC(pk) = 100 mA
MTP12N10
1 mF
-Voff
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1
Table 1. Inductive Load Switching Drive Circuit
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)
TYPICAL THERMAL RESPONSE
1.00
0.5
0.2
0.1
0.10
0.05
P(pk)
0.02
t1
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.01
0.01
0.10
1.00
RqJC(t) = r(t) RqJC
RqJC = °C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
10.00
t, TIME (ms)
Figure 20. Typical Thermal Response (ZqJC(t)) for MJE18002
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100.00
1000.0
MJE18002G
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AF
SEATING
PLANE
−T−
B
F
T
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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Sales Representative
MJE18002/D