BUL146G, BUL146FG SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146G / BUL146FG have an applications specific state−of−the−art die designed for use in fluorescent electric lamp ballasts to 130 W and in Switchmode Power supplies for all types of electronic equipment. http://onsemi.com POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS Features • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain Fast Switching ♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail) Full Characterization at 125°C Two Packages Choices: Standard TO−220 or Isolated TO−220 Parametric Distributions are Tight and Consistent Lot−to−Lot BUL146F, Case 221D, is UL Recognized to 3500 VRMS: File # E69369 These Devices are Pb−Free and are RoHS Compliant* ♦ ♦ • • • • • MARKING DIAGRAMS BUL146G AYWW MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 400 Vdc Collector−Base Breakdown Voltage VCES 700 Vdc Emitter−Base Voltage VEBO 9.0 Vdc Collector Current − Continuous − Peak (Note 1) IC ICM 6.0 15 Adc Base Current − Continuous − Peak (Note 1) IB IBM 4.0 8.0 Adc VISOL1 VISOL2 VISOL3 BUL146F 4500 3500 1500 V RMS Isolation Voltage (Note 2) (for 1 sec, R.H. < 30%, TC = 25_C) Total Device Dissipation @ TC = 25_C BUL146 BUL146F Derate above 25°C BUL146 BUL146F Operating and Storage Temperature PD W W/_C −65 to 150 Max _C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction−to−Case BUL146 BUL146F RqJC Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 260 _C April, 2010 − Rev. 9 3 2 3 TO−220 FULLPACK CASE 221D STYLE 2 UL RECOGNIZED G A Y WW = Pb−Free Package = Assembly Location = Year = Work Week Unit _C/W 1.25 3.125 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. 2. Proper strike and creepage distance must be provided. © Semiconductor Components Industries, LLC, 2010 2 BUL146FG AYWW 1 100 40 0.8 0.32 TJ, Tstg 1 TO−220AB CASE 221A−09 STYLE 1 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: BUL146/D BUL146G, BUL146FG ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit VCEO(sus) 400 − − Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO − − 100 mAdc Collector Cutoff Current (VCE = Rated VCES, VEB = 0) ICES − − − − − − 100 500 100 mAdc IEBO − − 100 mAdc VBE(sat) − − 0.82 0.93 1.1 1.25 Vdc VCE(sat) − − − − 0.22 0.20 0.30 0.30 0.5 0.5 0.7 0.7 Vdc hFE 14 − 12 12 8.0 7.0 10 − 30 20 20 13 12 20 34 − − − − − − − fT − 14 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) COB − 95 150 pF Input Capacitance (VEB = 8.0 V) CIB − 1000 1500 pF (TC = 125°C) − − 2.5 6.5 − − (TC = 125°C) − − 0.6 2.5 − − (TC = 125°C) − − 3.0 7.0 − − (TC = 125°C) − − 0.75 1.4 − − Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (TC = 125°C) (TC = 125°C) Collector Cutoff Current (VCE = 500 V, VEB = 0) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) ON CHARACTERISTICS Base−Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) Base−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) Collector−Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) (TC = 125°C) Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) (TC = 125°C) DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) (TC = 125°C) DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (TC = 125°C) (TC = 125°C) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Dynamic Saturation Voltage: Determined 1.0 ms and 3.0 ms respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 1.3 Adc IB1 = 300 mAdc VCC = 300 V) 1.0 ms (IC = 3.0 Adc IB1 = 0.6 Adc VCC = 300 V) 1.0 ms 3.0 ms 3.0 ms http://onsemi.com 2 VCE(dsat) V BUL146G, BUL146FG ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) Symbol Characteristic Min Typ Max Unit ton − − 100 90 200 − ns toff − − 1.35 1.90 2.5 − ms ton − − 90 100 150 − ns toff − − 1.7 2.1 2.5 − ms tfi − − 115 120 200 − ns tsi − − 1.35 1.75 2.5 − ms tc − − 200 210 350 − ns tfi − − 85 100 150 − ns tsi − − 1.75 2.25 2.5 − ms tc − − 175 200 300 − ns tfi 80 − − 210 180 − ns tsi 2.6 − − 4.5 3.8 − ms tc − − 230 400 350 − ns SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms) Turn−On Time (IC = 1.3 Adc, IB1 = 0.13 Adc IB2 = 0.65 Adc, VCC = 300 V) Turn−Off Time Turn−On Time (TC = 125°C) (TC = 125°C) (IC = 3.0 Adc, IB1 = 0.6 Adc IB1 = 1.5 Adc, VCC = 300 V) Turn−Off Time (TC = 125°C) (TC = 125°C) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time (IC = 1.3 Adc, IB1 = 0.13 Adc IB2 = 0.65 Adc) Storage Time (TC = 125°C) Crossover Time Fall Time (TC = 125°C) (IC = 3.0 Adc, IB1 = 0.6 Adc IB2 = 1.5 Adc) Storage Time Storage Time Crossover Time (TC = 125°C) (TC = 125°C) Crossover Time Fall Time (TC = 125°C) (TC = 125°C) (IC = 3.0 Adc, IB1 = 0.6 Adc IB2 = 0.6 Adc) (TC = 125°C) (TC = 125°C) (TC = 125°C) http://onsemi.com 3 BUL146G, BUL146FG TYPICAL STATIC CHARACTERISTICS 100 100 TJ = 25°C TJ = -20°C 10 1 0.01 0.1 1 VCE = 5 V TJ = 125°C VCE = 1 V h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN TJ = 125°C TJ = 25°C TJ = -20°C 10 1 0.01 10 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volts 2 10 IC = 1 A 1 2A 3A 5A V CE , VOLTAGE (V) V CE , VOLTAGE (V) TJ = 25°C 6A 1 IC/IB = 10 0.1 TJ = 25°C TJ = 125°C IC/IB = 5 0 0.01 0.1 1 0.01 0.01 10 10 Figure 3. Collector Saturation Region Figure 4. Collector−Emitter Saturation Voltage 10000 1.1 TJ = 25°C f = 1 MHz Cib 1000 C, CAPACITANCE (pF) 1 V BE , VOLTAGE (V) 1 IC COLLECTOR CURRENT (AMPS) 1.2 0.9 0.8 TJ = 25°C 0.7 0.6 0.5 0.1 IB, BASE CURRENT (mA) TJ = 125°C 0.4 0.01 100 Cob 10 IC/IB = 5 IC/IB = 10 0.1 1 1 10 1 10 100 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Base−Emitter Saturation Region Figure 6. Capacitance http://onsemi.com 4 1000 BUL146G, BUL146FG TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 1000 4000 600 400 TJ = 25°C IC/IB = 10 2000 1500 500 0 0 2 0 6 4 0 8 2 4 6 IC, COLLECTOR CURRENT (AMPS) Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff 4000 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 1500 1000 500 TJ = 25°C TJ = 125°C 0 1 TJ = 25°C TJ = 125°C 3500 t si , STORAGE TIME (ns) IC/IB = 5 2000 3000 2500 2000 1500 1000 IC = 1.3 A 500 IC/IB = 10 2 5 3 4 6 IC COLLECTOR CURRENT (AMPS) 7 0 8 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH IC = 3 A 4 3 Figure 9. Inductive Storage Time, tsi 5 hFE, FORCED GAIN 6 7 Figure 10. Inductive Storage Time, tsi(hFE) 250 250 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH tc 200 200 tfi 150 t, TIME (ns) t, TIME (ns) 8 IC, COLLECTOR CURRENT (AMPS) 2500 t, TIME (ns) 2500 1000 200 0 IC/IB = 5 3000 TJ = 125°C IB(off) = IC/2 VCC = 300 V PW = 20 ms TJ = 25°C TJ = 125°C 3500 t, TIME (ns) 800 t, TIME (ns) IB(off) = IC/2 VCC = 300 V PW = 20 ms IC/IB = 5 IC/IB = 10 100 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 50 0 0 1 tc tfi 150 100 TJ = 25°C TJ = 125°C 2 3 4 5 6 7 50 8 TJ = 25°C TJ = 125°C 0 1 2 3 4 5 6 7 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Inductive Switching, tc and tfi IC/IB = 5 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 http://onsemi.com 5 8 BUL146G, BUL146FG TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 250 130 TC , CROSS-OVER TIME (ns) Tfi , FALL TIME (ns) IC = 1.3 A IC = 1.3 A 120 IC = 3 A 110 100 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 90 80 70 TJ = 25°C TJ = 125°C 60 3 4 5 6 7 200 150 IC = 3 A TJ = 25°C TJ = 125°C 50 8 9 10 11 12 13 14 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 100 3 15 4 5 6 7 8 9 10 11 12 13 hFE, FORCED GAIN hFE, FORCED GAIN Figure 13. Inductive Fall Time Figure 14. Inductive Cross−Over Time 14 15 GUARANTEED SAFE OPERATING AREA INFORMATION 7 100 TC ≤ 125°C IC/IB ≥ 4 LC = 500 mH 10 5 ms 10 ms 1 ms 1 ms EXTENDED SOA 1 0.1 I C , COLLECTOR CURRENT (AMPS) I C , COLLECTOR CURRENT (AMPS) DC (BUL146) 5 4 3 VBE(off) 2 -5 V 1 0V 0.01 10 0 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 1000 1,0 SECOND BREAKDOWN DERATING 0,8 0,6 0,4 THERMAL DERATING 0,2 0,0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (°C) Figure 17. Forward Bias Power Derating -1, 5 V 600 200 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 800 Figure 16. Reverse Bias Switching Safe Operating Area Figure 15. Forward Bias Safe Operating Area POWER DERATING FACTOR 6 160 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 20. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base−to−emitter junction reverse−biased. The safe level is specified as a reverse− biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. http://onsemi.com 6 BUL146G, BUL146FG 10 5 4 VCE dyn 1 ms 3 8 2 VOLTS 90% IC tfi IC 9 tsi 7 dyn 3 ms 1 6 0 5 tc VCLAMP 10% IC 10% VCLAMP 4 -1 90% IB -2 1 ms -3 -4 90% IB1 2 3 ms IB -5 0 IB 3 1 0 1 2 3 4 TIME 5 6 7 0 8 Figure 18. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 5 6 7 8 Figure 19. Inductive Switching Measurements +15 V 1 mF 150 W 3W 100 W 3W IC PEAK 100 mF MTP8P10 VCE PEAK VCE MTP8P10 MPF930 RB1 IB1 MUR105 Iout MPF930 +10 V IB A IB2 50 W RB2 MJE210 COMMON 500 mF 150 W 3W MTP12N10 1 mF V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA -Voff INDUCTIVE SWITCHING L = 200 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit http://onsemi.com 7 RBSOA L = 500 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 BUL146G, BUL146FG TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 P(pk) 0.1 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 10 100 1000 t, TIME (ms) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 20. Typical Thermal Response (ZqJC(t)) for BUL146 1.00 D = 0.5 0.2 0.10 P(pk) 0.1 0.05 t1 0.02 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.10 1.00 10.00 RqJC(t) = r(t) RqJC RqJC = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 100.00 t, TIME (ms) Figure 21. Typical Thermal Response for BUL146F ORDERING INFORMATION Device BUL146G BUL146FG Package Shipping TO−220AB (Pb−Free) 50 Units / Rail TO−220 (Fullpack) (Pb−Free) 50 Units / Rail http://onsemi.com 8 1000 BUL146G, BUL146FG TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE CLIP LEADS HEATSINK 0.099″ MIN MOUNTED FULLY ISOLATED PACKAGE LEADS LEADS HEATSINK HEATSINK 0.099″ MIN 0.110″ MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 *Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 4-40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 23a. Screw−Mounted Figure 23b. Clip−Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 9 BUL146G, BUL146FG PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AF −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR TO−220 FULLPAK CASE 221D−03 ISSUE G −T− −B− F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. SEATING PLANE C S Q U DIM A B C D F G H J K L N Q R S U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M Y INCHES MIN MAX 0.625 0.635 0.408 0.418 0.180 0.190 0.026 0.031 0.116 0.119 0.100 BSC 0.125 0.135 0.018 0.025 0.530 0.540 0.048 0.053 0.200 BSC 0.124 0.128 0.099 0.103 0.101 0.113 0.238 0.258 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER http://onsemi.com 10 MILLIMETERS MIN MAX 15.88 16.12 10.37 10.63 4.57 4.83 0.65 0.78 2.95 3.02 2.54 BSC 3.18 3.43 0.45 0.63 13.47 13.73 1.23 1.36 5.08 BSC 3.15 3.25 2.51 2.62 2.57 2.87 6.06 6.56 BUL146G, BUL146FG SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 11 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BUL146/D