MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. These state–of–the–art devices have the following features: • • • • • • Guardring for Stress Protection Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8″ Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C; ESD Ratings: Human Body Model, 3 http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS Mechanical Characteristics SOD–123 CASE 425 STYLE 1 • Reel Options: MBR130T1 = 3,000 per 7″ reel/8 mm tape • • • • • • Reel Options: MBR130T3 = 10,000 per 13″ reel/8 mm tape Device Marking: S3 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds DEVICE MARKING S3 S3 = Device Code MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (Rated VR) TL = 65°C IF(AV) Non–Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 5.5 A Storage Temperature Range Tstg –65 to +125 °C Operating Junction Temperature TJ –65 to +125 °C dv/dt 1000 V/s Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2001 February, 2001 – Rev. 1 A ORDERING INFORMATION Device Package Shipping MBR130T1 SOD–123 3000/Tape & Reel MBR130T3 SOD–123 10,000/Tape & Reel 1.0 1 Publication Order Number: MBR130T1/D MBR130T1, MBR130T3 THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance, Junction to Ambient (Note 1.) Characteristic RθJA 230 °C/W Thermal Resistance, Junction to Lead (Note 1.) RθJL 108 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2.) (IF = 0.1 A, TJ = 25°C) (IF = 0.7 A, TJ = 25°C) (IF = 1.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TC = 25°C) (VR = 5 V, TC = 25°C) IR Typ Max – – 0.47 0.35 0.45 – Unit V A 60 10 1. FR–4 or FR–5 = 3.5 × 1.5 inches using a 1 inch Cu pad. 2. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%. 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 1 0.1 TJ = 125°C 75°C 0.2 0.25 0.3 0.35 25°C 0.4 0.45 0.5 0.55 0.6 1 0.1 0.65 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) TJ = 125°C 75°C 0.2 0.25 0.3 25°C 0.35 0.4 0.45 0.5 0.55 0.6 0.65 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage http://onsemi.com 2 MBR130T1, MBR130T3 200 TJ = 125°C 180 0.001 C, CAPACITANCE (pF) IR, REVERSE CURRENT (AMPS) 0.01 75°C 0.0001 0.00001 25°C 0.000001 160 140 120 100 80 60 40 20 0.0000001 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) 30 0 0 5 1.8 1.6 dc 1.4 RATED VOLTAGE APPLIED 1.2 SQUARE WAVE 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 TL, LEAD TEMPERATURE (°C) 120 0.9 0.8 0.7 SQUARE WAVE 0.6 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation RECOMMENDED FOOTPRINT FOR SOD–123 0.91 0.036 2.36 0.093 4.19 0.165 dc 0.5 Figure 5. Current Derating, Lead, RJL = 108C/W ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 35 Figure 4. Typical Capacitance PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Reverse Current 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.22 0.048 mm inches SOD–123 http://onsemi.com 3 MBR130T1, MBR130T3 PACKAGE DIMENSIONS SOD–123 CASE 425–04 ISSUE C A ÂÂÂÂ ÂÂÂÂ C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. H 1 K DIM A B C D E H J K B E 2 D J INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.004 --0.000 0.004 --0.006 0.140 0.152 MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 --0.00 0.10 --0.15 3.55 3.85 STYLE 1: PIN 1. CATHODE 2. ANODE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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