ONSEMI NDF08N50ZG

NDF08N50Z, NDP08N50Z
N-Channel Power MOSFET
500 V, 0.69 W
Features
•
•
•
•
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
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ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
NDF08N50Z
NDP08N50Z
Drain−to−Source Voltage
VDSS
Continuous Drain Current
RqJC
ID
7.5 (Note 1)
7.5
A
Continuous Drain Current
RqJC TA = 100°C
ID
4.7 (Note 1)
4.7
A
Pulsed Drain Current,
VGS @ 10 V
IDM
30 (Note 1)
30
A
Power Dissipation
PD
31
125
W
Gate−to−Source Voltage
VGS
30
V
Single Pulse Avalanche
Energy, ID = 7.5 A
EAS
190
mJ
ESD (HBM)
(JESD 22−A114)
Vesd
3500
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 14)
VISO
Peak Diode Recovery
dv/dt
4.5
V/ns
Continuous Source
Current (Body Diode)
IS
7.5
A
Maximum Temperature for
Soldering Leads
TL
260
°C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
500
VDSS
RDS(ON) (TYP) @ 3.6 A
500 V
0.69 W
Unit
V
4500
N−Channel
D (2)
G (1)
S (3)
TO−220FP
CASE 221D
STYLE 1
MARKING
DIAGRAM
V
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ISD = 7.5 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
NDF08N50ZG
or
NDP08N50ZG
AYWW
Gate
Source
TO−220AB
CASE 221A
STYLE 5
Drain
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 1
1
Device
Package
Shipping
NDF08N50ZG
TO−220FP
50 Units/Rail
NDP08N50ZG
TO−220AB
In Development
Publication Order Number:
NDF08N50Z/D
NDF08N50Z, NDP08N50Z
THERMAL RESISTANCE
Symbol
NDF08N50Z
NDP08N50Z
Unit
Junction−to−Case (Drain)
Parameter
RqJC
4.0
1.0
°C/W
Junction−to−Ambient Steady State (Note 3)
RqJA
50
50
3. Insertion mounted
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
VGS = 0 V, ID = 1 mA
BVDSS
500
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
25°C
VDS = 500 V, VGS = 0 V
Gate−to−Source Forward Leakage
V
0.6
IDSS
V/°C
1
150°C
mA
50
VGS = ±20 V
IGSS
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 3.6 A
RDS(on)
Gate Threshold Voltage
VDS = VGS, ID = 100 mA
VGS(th)
Forward Transconductance
VDS = 15 V, ID = 3.75 A
gFS
6.0
S
Ciss
912
pF
Coss
120
Reverse Transfer Capacitance
Crss
27
Total Gate Charge
Qg
31
Qgs
6.2
Qgd
17
Plateau Voltage
VGP
6.3
V
Gate Resistance
Rg
3.0
W
td(on)
13
ns
tr
23
td(off)
31
tf
29
±10
mA
0.85
W
4.5
V
ON CHARACTERISTICS (Note 4)
0.69
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Gate−to−Source Charge
VDD = 250 V, ID = 7.5 A,
VGS = 10 V
Gate−to−Drain (“Miller”) Charge
nC
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 250 V, ID = 7.5 A,
VGS = 10 V, RG = 5 W
Fall Time
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS = 7.5 A, VGS = 0 V
VSD
VGS = 0 V, VDD = 30 V
IS = 7.5 A, di/dt = 100 A/ms
trr
295
ns
Qrr
1.85
mC
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
1.6
V
NDF08N50Z, NDP08N50Z
TYPICAL CHARACTERISTICS
20.0
20.0
16.0
14.0
7.0 V
VGS = 10 V
12.0
6.5 V
10.0
8.0
6.0 V
6.0
4.0
5.5 V
2.0
5.0
10.0
15.0
16.0
14.0
12.0
10.0
8.0
TJ = 25°C
6.0
TJ = 150°C
4.0
20.0
0.0
25.0
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.85
0.80
0.75
0.70
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10
2.25
7
8
9
10
1.00
0.95
0.90
VGS = 10 V
TJ = 25°C
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate−to−Source
Voltage
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
2.75
2.50
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.90
ID = 3.6 A
VGS = 10 V
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
ID = 3.6 A
TJ = 25°C
6.0
6
Figure 2. Transfer Characteristics
1.00
0.65
5.5
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
0.95
TJ = −55°C
2.0
5.0 V
0.0
0.0
VDS = 25 V
18.0
8.0 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
18.0
1.15
ID = 1 mA
1.10
1.05
1.00
0.95
0.90
−50
Figure 5. On−Resistance Variation with
Temperature
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. BVDSS Variation with Temperature
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3
10
150
NDF08N50Z, NDP08N50Z
TYPICAL CHARACTERISTICS
2000
10
TJ = 25°C
VGS = 0 V
f = 1 MHz
1800
C, CAPACITANCE (pF)
1.0
TJ = 125°C
1600
1400
1200
Ciss
1000
800
600
400
200
0
50
0
100 150 200 250 300 350 400 450 500
0
5
10
15
20
25
30
35
40
45
50
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1.2
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
Figure 8. Capacitance Variation
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.10
Coss
Crss
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
300
QT
250
200
VDS
VGS
150
QGD
QGS
100
VDS = 250 V
ID = 7.5 A
TJ = 25°C
0
4
8
12
16
20
24
28
50
0
32
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (mA)
TJ = 150°C
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
t, TIME (ns)
VDD = 250 V
ID = 7.5 A
VGS = 10 V
100
IS, SOURCE CURRENT (A)
10.0
td(off)
tr
tf
td(on)
10
1.0
1
10
RG, GATE RESISTANCE (W)
100
TJ = 150°C
1.0
125°C
25°C
−55°C
0.1
0.3
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage versus
Current
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4
NDF08N50Z, NDP08N50Z
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
100
10
VGS v 30 V
SINGLE PULSE
TC = 25°C
10 ms
1 ms 100 ms 10 ms
dc
1
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF08N50Z
10
R(t) (C/W)
1.0
0.1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
0.01
SINGLE PULSE
RqJC = 4.0°C/W
Steady State
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case) for NDF08N50Z
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
100
1000
NDF08N50Z, NDP08N50Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
SEATING
PLANE
C
T
S
4
U
1 2 3
H
K
Z
L
R
V
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
Y
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
DRAIN
SOURCE
DRAIN
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NDF08N50Z/D