BC368 (NPN), BC369 (PNP) Amplifier Transistors Voltage and Current are Negative for PNP Transistors Features http://onsemi.com • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 20 Vdc Collector − Emitter Voltage VCES 25 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 1 2 TO−92 CASE 29 STYLE 14 3 MARKING DIAGRAMS BC36 x AYWW G G BC 36x AYWW G G THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Ambient Characteristic RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. BC36x = Device Code x = 8 or 9 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC368 COLLECTOR 2 COLLECTOR 2 BC368G 3 BASE 3 BASE NPN 1 EMITTER BC368ZL1 BC368ZL1G PNP BC369 1 EMITTER BC369G BC369ZL1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 5 1 BC369ZL1G Package Shipping TO−92 5000 Units/Box TO−92 (Pb−Free) 5000 Units/Box TO−92 2000/Ammo Box TO−92 (Pb−Free) 2000/Ammo Box TO−92 5000 Units/Box TO−92 (Pb−Free) 5000 Units/Box TO−92 2000/Ammo Box TO−92 (Pb−Free) 2000/Ammo Box Publication Order Number: BC368/D BC368 (NPN), BC369 (PNP) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 20 − − Vdc Collector −Base Breakdown Voltage (IC = 100 mA, IE = 0 ) V(BR)CBO 25 − − Vdc Emitter −Base Breakdown Voltage (IE = 100 mA, IC = 0) V(BR)EBO 5.0 − − Vdc Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150°C) ICBO − − − − 10 1.0 mAdc mAdc Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO − − 10 mAdc 50 85 170 60 − − − − − 375 375 − fT 65 − − MHz Collector−Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VCE(sat) − − 0.5 V Base−Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) VBE(on) − − 1.0 V OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V, IC = 0.5 A) hFE BC368, 369 BC368−25 (VCE = 1.0 V, IC = 1.0 A) Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) http://onsemi.com 2 − BC368 (NPN), BC369 (PNP) 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) hFE, CURRENT GAIN 200 100 70 50 20 VCE = 1.0 V TJ = 25°C 10 20 200 50 100 IC, COLLECTOR CURRENT (mA) 500 1000 TJ = 25°C 0.8 0.6 1000 mA 500 mA 0.2 IC = 10 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 250 mA 20 50 100 Figure 2. Collector Saturation Region TJ = 25°C θ VB , TEMPERATURE COEFFICIENT (mV/ °C) −0.8 1.0 VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) 100 mA 0.4 Figure 1. DC Current Gain VBE(on) @ VCE = 1.0 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) −1.2 −1.6 −2.0 qVB for VBE −2.4 −2.8 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) Figure 4. Temperature Coefficient Figure 3. “On” Voltages 300 160 TJ = 25°C 200 C, CAPACITANCE (pF) f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 50 mA 100 70 VCE = 10 V TJ = 25°C f = 20 MHz 50 30 10 20 50 120 80 Cibo 40 Cobo 100 200 500 0 Cobo Cibo 1000 5.0 1.0 10 2.0 15 3.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Current−Gain — Bandwidth Product Figure 6. Capacitance http://onsemi.com 3 20 4.0 25 5.0 BC368 (NPN), BC369 (PNP) PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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