MC74LCX245 Low-Voltage CMOS Octal Transceiver With 5 V–Tolerant Inputs and Outputs (3–State, Inverting) http://onsemi.com The MC74LCX245 is a high performance, non–inverting octal transceiver operating from a 2.3 to 3.6 V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers while TTL compatible outputs offer improved switching noise performance. A VI specification of 5.5 V allows MC74LCX245 inputs to be safely driven from 5 V devices. The MC74LCX245 is suitable for memory address driving and all TTL level bus oriented transceiver applications. Current drive capability is 24 mA at both A and B ports. The Transmit/Receive (T/R) input determines the direction of data flow through the bi–directional transceiver. Transmit (active–HIGH) enables data from A ports to B ports; Receive (active–LOW) enables data from B to A ports. The Output Enable input, when HIGH, disables both A and B ports by placing them in a HIGH Z condition. • • • • • • • • MARKING DIAGRAMS 20 20 LCX245 1 SO–20 DW SUFFIX CASE 751D AWLYYWW 1 20 20 LCX 245 ALYW 1 TSSOP–20 DT SUFFIX CASE 948E Designed for 2.3 to 3.6 V VCC Operation 5 V Tolerant — Interface Capability With 5 V TTL Logic 1 Supports Live Insertion and Withdrawal IOFF Specification Guarantees High Impedance When VCC = 0 V 20 20 LVTTL Compatible 74LCX245 AWLYYWW 1 LVCMOS Compatible 24 mA Balanced Output Sink and Source Capability Near Zero Static Supply Current in All Three Logic States (10 µA) Substantially Reduces System Power Requirements Latchup Performance Exceeds 500 mA • • ESD Performance: Human Body Model >2000 V; Machine Model >200 V SO EIAJ–20 M SUFFIX CASE 967 A L , WL Y, YY W, WW 1 = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2000 December, 2000 – Rev. 4 1 Package Shipping MC74LCX245DW SO–20 38 Units/Rail MC74LCX245DWR2 SO–20 1000 Units/Reel MC74LCX245DT TSSOP–20 75 Units/Rail MC74LCX245DTEL TSSOP–20 2000 Units/Reel MC74LCX245DTR2 TSSOP–20 2500 Units/Reel MC74LCX245M SO EIAJ–20 40 Units/Rail MC74LCX245MEL SO EIAJ–20 2000 Units/Reel Publication Order Number: MC74LCX245/D MC74LCX245 VCC OE B0 B1 B2 B3 B4 B5 B6 B7 20 19 18 17 16 15 14 13 12 11 OE 19 T/R 1 A0 2 18 1 2 3 4 5 6 7 8 9 10 T/R A0 A1 A2 A3 A4 A5 A6 A7 GND A1 3 17 A2 Figure 1. Pinout (Top View) A3 FUNCTION OE T/R A0–A7 B0–B7 Output Enable Input Transmit/Receive Input Side A 3–State Inputs or 3–State Outputs Side B 3–State Inputs or 3–StateOutputs A4 A6 INPUTS OE T/R L B Data to A Bus L H A Data to B Bus H X Z 12 A7 http://onsemi.com 2 B6 9 11 H = High Voltage Level L = Low Voltage Level Z = High Impedance State X = High or Low Voltage Level and Transitions are Acceptable For ICC reasons, Do Not Float Inputs B5 8 OPERATING MODE Non–Inverting L B4 7 13 TRUTH TABLE B3 6 14 A5 B2 5 15 PINS B1 4 16 PIN NAMES B0 Figure 2. Logic Diagram B7 MC74LCX245 ABSOLUTE MAXIMUM RATINGS* Symbol Parameter VCC DC Supply Voltage VI VO Value Condition Unit –0.5 to +7.0 V DC Input Voltage –0.5 ≤ VI ≤ +7.0 V DC Output Voltage –0.5 ≤ VO ≤ +7.0 Output in 3–State V –0.5 ≤ VO ≤ VCC + 0.5 Output in HIGH or LOW State (Note 1.) V –50 VI< GND mA –50 VO < GND mA +50 VO > VCC mA IIK DC Input Diode Current IOK DC Output Diode Current IO DC Output Source/Sink Current ±50 mA ICC DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current Per Ground Pin ±100 mA TSTG Storage Temperature Range –65 to +150 °C * Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. 1. IO absolute maximum rating must be observed. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Operating Data Retention Only Min Typ Max Unit 2.0 1.5 2.5, 3.3 2.5, 3.3 3.6 3.6 V 0 5.5 V 0 0 VCC 5.5 V VCC Supply Voltage VI Input Voltage VO Output Voltage IOH HIGH Level Output Current VCC = 3.0 V – 3.6 V VCC = 2.7 V – 3.0 V VCC = 2.3 V – 2.7 V – 24 – 12 –8 mA IOL LOW Level Output Current VCC = 3.0 V – 3.6 V VCC = 2.7 V – 3.0 V VCC = 2.3 V – 2.7 V + 24 + 12 +8 mA TA Operating Free–Air Temperature –40 +85 °C ∆t/∆V Input Transition Rise or Fall Rate, VIN from 0.8 V to 2.0 V, VCC = 3.0 V 0 10 ns/V (HIGH or LOW State) (3–State) http://onsemi.com 3 MC74LCX245 DC ELECTRICAL CHARACTERISTICS TA = –40°C to +85°C Symbol VIH VIL VOH VOL Characteristic HIGH Level Input Voltage g ((Note 2.)) LOW Level Input Voltage g (Note ( 2.)) HIGH Level Output Voltage g LOW Level Output Voltage g Condition Min 2.3 V ≤ VCC ≤ 2.7 V 1.7 2.7 V ≤ VCC ≤ 3.6 V 2.0 Max Unit V 2.3 V ≤ VCC ≤ 2.7 V 0.7 2.7 V ≤ VCC ≤ 3.6 V 0.8 2.3 V ≤ VCC ≤ 3.6 V; IOL = 100 µA VCC – 0.2 VCC = 2.3 V; IOH = –8 mA 1.8 VCC = 2.7 V; IOH = –12 mA 2.2 VCC = 3.0 V; IOH = –18 mA 2.4 VCC = 3.0 V; IOH = –24 mA 2.2 V V 2.3 V ≤ VCC ≤ 3.6 V; IOL = 100 µA 0.2 VCC = 2.3 V; IOL= 8 mA 0.6 VCC = 2.7 V; IOL= 12 mA 0.4 VCC = 3.0 V; IOL = 16 mA 0.4 VCC = 3.0 V; IOL = 24 mA 0.55 V II Input Leakage Current 2.3 V ≤ VCC ≤ 3.6 V; 0 V ≤ VI ≤ 5.5 V ±5 µA IOZ 3–State Output Current 2.3 ≤ VCC ≤ 3.6 V; 0V ≤ VO ≤ 5.5 V; VI = VIH or V IL ±5 µA IOFF Power–Off Leakage Current VCC = 0 V; VI or VO = 5.5 V 10 µA ICC Quiescent Supply y Current 2.3 ≤ VCC ≤ 3.6 V; VI = GND or VCC 10 µA µ 2.3 ≤ VCC ≤ 3.6 V; 3.6 ≤ VI or VO ≤ 5.5 V ±10 2.3 ≤ VCC ≤ 3.6 V; VIH = VCC – 0.6 V 500 ∆ICC Increase in ICC per Input µA 2. These values of VI are used to test DC electrical characteristics only. AC CHARACTERISTICS tR = tF = 2.5 ns; RL = 500 Ω Unit Limits TA = –40°C to +85°C Symbol Parameter VCC = 3.3 V ± 0.3 V VCC = 2.7 V VCC = 2.5 V ± 0.2 V CL = 50 pF CL = 50 pF CL = 30 pF Waveform Min Max Min Max Min Max tPLH tPHL Propagation Delay Input to Output 1 1.5 1.5 7.0 7.0 1.5 1.5 8.0 8.0 1.5 1.5 8.4 8.4 ns tPZH tPZL Output Enable Time to High and Low Level 2 1.5 1.5 8.5 8.5 1.5 1.5 9.5 9.5 1.5 1.5 10.5 10.5 ns tPHZ tPLZ Output Disable Time From High and Low Level 2 1.5 1.5 7.5 7.5 1.5 1.5 8.5 8.5 1.5 1.5 9.0 9.0 ns tOSHL tOSLH Output–to–Output Skew (Note 3.) 1.0 1.0 ns 3. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH–to–LOW (tOSHL) or LOW–to–HIGH (tOSLH); parameter guaranteed by design. http://onsemi.com 4 MC74LCX245 DYNAMIC SWITCHING CHARACTERISTICS TA = +25°C Symbol Characteristic Condition Min Typ Max Unit VOLP Dynamic LOW Peak Voltage (Note 4.) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V 0.8 0.6 V V VOLV Dynamic LOW Valley Voltage (Note 4.) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V –0.8 –0.6 V V 4. Number of outputs defined as “n”. Measured with “n–1” outputs switching from HIGH–to–LOW or LOW–to–HIGH. The remaining output is measured in the LOW state. CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit CIN Input Capacitance VCC = 3.3 V, VI = 0 V or VCC 7 pF CI/O Input/Output Capacitance VCC = 3.3 V, VI = 0 V or VCC 8 pF CPD Power Dissipation Capacitance 10 MHz, VCC = 3.3 V, VI = 0 V or VCC 25 pF VCC OE, T/R An, Bn Vmi 0V Vmi tPZH 0V tPLH Vmi Vmi VCC tPHZ An, Bn tPHL Vmo VOH VHZ VOH Bn, An Vmo Vmo tPZL tPLZ VOL Vmo An, Bn WAVEFORM 1 – PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns WAVEFORM 2 – OUTPUT ENABLE AND DISABLE TIMES tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns VCC 3.3 V ± 0.3 V 2.7 V Vmi 1.5 V 1.5 V VCC/2 Vmo 1.5 V 1.5 V VCC/2 VHZ VOL + 0.3 V VOL + 0.3 V VOL + 0.15 V VLZ VOH – 0.3 V VOH – 0.3 V VOH – 015 V Symbol VLZ VOL 2.5 V ± 0.2 V Figure 3. AC Waveforms http://onsemi.com 5 MC74LCX245 VCC PULSE GENERATOR R1 DUT RT CL TEST RL SWITCH tPLH, tPHL Open tPZL, tPLZ 6 V at VCC = 3.3 0.3 V 6 V at VCC = 2.5 0.2 V Open Collector/Drain tPLH and tPHL 6V tPZH, tPHZ CL = CL = RL = RT = GND 50 pF at VCC = 3.3 0.3 V or equivalent (includes jig and probe capacitance) 30 pF at VCC = 2.5 0.2 V or equivalent (includes jig and probe capacitance) R1 = 500 Ω or equivalent ZOUT of pulse generator (typically 50 Ω) Figure 4. Test Circuit http://onsemi.com 6 6V OPEN GND MC74LCX245 PACKAGE DIMENSIONS SO–20 DW SUFFIX CASE 751D–05 ISSUE F A 20 X 45 h H M E 0.25 10X NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION. 11 B M D 1 10 B 20X 0.25 DIM A A1 B C D E e H h L B M T A S B S L A 18X e A1 SEATING PLANE C T MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 12.65 12.95 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0 7 TSSOP–20 DT SUFFIX CASE 948E–02 ISSUE A 20X 0.15 (0.006) T U 2X K REF 0.10 (0.004) S L/2 20 M T U S V S K K1 ÍÍÍÍ ÍÍÍÍ ÍÍÍÍ 11 J J1 B L –U– PIN 1 IDENT SECTION N–N 1 10 0.25 (0.010) N 0.15 (0.006) T U S M A –V– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. N F DETAIL E –W– C D G H DETAIL E 0.100 (0.004) –T– SEATING PLANE http://onsemi.com 7 DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 6.40 6.60 4.30 4.50 --1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.27 0.37 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0 8 INCHES MIN MAX 0.252 0.260 0.169 0.177 --0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.011 0.015 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0 8 MC74LCX245 PACKAGE DIMENSIONS SO EIAJ–20 M SUFFIX CASE 967–01 ISSUE O 20 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). LE 11 Q1 E HE 1 M L 10 DETAIL P Z D VIEW P e A c A1 b 0.13 (0.005) M 0.10 (0.004) DIM A A1 b c D E e HE L LE M Q1 Z MILLIMETERS MIN MAX --2.05 0.05 0.20 0.35 0.50 0.18 0.27 12.35 12.80 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 0 0.70 0.90 --0.81 INCHES MIN MAX --0.081 0.002 0.008 0.014 0.020 0.007 0.011 0.486 0.504 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 0 0.028 0.035 --0.032 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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