MJE5850, MJE5851, MJE5852 MJE5851 and MJE5852 are Preferred Devices SWITCHMODEt Series PNP Silicon Power Transistors http://onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. 8 AMPERE PCP SILICON POWER TRANSISTORS 300−350−400 VOLTS 80 WATTS Features • • • • • • • • • Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Fast Turn−Off Times ♦ 100 ns Inductive Fall Time @ 25_C (Typ) ♦ 125 ns Inductive Crossover Time @ 25°C (Typ) Operating Temperature Range −65 to +150_C 100_C Performance Specified for: ♦ Reversed Biased SOA with Inductive Loads ♦ Switching Times with Inductive Loads ♦ Saturation Voltages ♦ Leakage Currents Pb−Free Packages are Available* MARKING DIAGRAM MJE585xG AY WW 1 2 3 TO−220AB CASE 221A−09 STYLE 1 MJE585x G A Y WW = Device Code x = 0, 1, or 2 = Pb−Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 4 1 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MJE5850/D MJE5850, MJE5851, MJE5852 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol MJE5850 MJE5851 MJE5852 Unit Collector−Emitter Voltage Rating VCEO(sus) 300 350 400 Vdc Collector−Emitter Voltage VCEV 350 400 450 Vdc Emitter Base Voltage VEB 6.0 Vdc Collector Current − Continuous − Peak (Note 1) IC ICM 8.0 16 Adc Base Current − Continuous − Peak (Note 1) IB IBM 4.0 8.0 Adc PD 80 0.640 W W/_C TJ, Tstg – 65 to 150 _C Symbol Max Unit RqJC 1.25 _C/W TL 275 _C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. ORDERING INFORMATION Device MJE5850 MJE5850G MJE5851 MJE5851G MJE5852 MJE5852G Package Shipping TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) http://onsemi.com 2 50 Units / Rail MJE5850, MJE5851, MJE5852 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max VCEO(sus) 300 350 400 − − − − − − − − 0.5 2.5 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mA, IB = 0) MJE5850 MJE5851 MJE5852 Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV mAdc Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 W, TC = 100_C) ICER − − 3.0 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO − − 1.0 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased Clamped Inductive SOA with base reverse biased IS/b See Figure 12 RBSOA See Figure 13 ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 2.0 Adc, VCE = 5 Vdc) (IC = 5.0 Adc, VCE = 5 Vdc) hFE − 15 5 − − − − − − − − − − 2.0 5.0 2.5 − − − − 1.5 1.5 Cob − 270 − pF (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, tp = 50 ms, Duty Cycle v 2%) td − 0.025 0.1 ms tr − 0.100 0.5 ms (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, VBE(off) = 5 Vdc, tp = 50 ms, Duty Cycle v 2%) ts − 0.60 2.0 ms tf − 0.11 0.5 ms tsv − 0.8 3.0 ms tc − 0.4 1.5 ms tfi − 0.1 − ms tsv − 0.5 − ms tc − 0.125 − ms tfi − 0.1 − ms Collector−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 8.0 Adc, IB = 3.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C) VCE(sat) Base−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time Fall Time Inductive Load, Clamped (Table 1) Storage Time Crossover Time (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 100_C) Fall Time Storage Time Crossover Time (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 25_C) Fall Time 2. Pulse Test: PW = 300 ms. Duty Cycle v 2% http://onsemi.com 3 MJE5850, MJE5851, MJE5852 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 200 TJ = 150°C hFE , DC CURRENT GAIN 100 70 50 TJ = 25°C 30 20 VCE = 5 V 10 7.0 5.0 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS) 5.0 7.0 10 2.0 1.6 IC = 0.25 A 1.2 TJ = 25°C 0.4 0 0.01 0.02 1.6 1.6 V, VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 2.0 IC/IB = 4 1.2 TJ = 150°C 0.4 TJ = 25°C 0.5 0.7 1.0 2.0 3.0 5.0 7.0 0.8 10 TJ = 25°C TJ = 150°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector−Emitter Saturation Voltage Figure 4. Base−Emitter Voltage 10 3000 2000 TJ = 25°C 104 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (nA) 5.0 1.2 0 0.1 10 105 TJ = 150°C 103 100°C 102 101 REVERSE FORWARD VCE = 200 V +0.2 +0.1 1000 Cib 500 Cob 200 100 50 25°C 100 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (AMPS) IC/IB = 4 0.4 0.2 0.3 0.05 Figure 2. Collector Saturation Region 2.0 0 0.1 5.0 A 0.8 Figure 1. DC Current Gain 0.8 2.5 A 1.0 A −0.1 −0.2 −0.3 −0.4 0 VBE, BASE−EMITTER VOLTAGE (VOLTS) 30 0.1 0.2 −0.5 Figure 5. Collector Cutoff Region 0.5 1.0 5.0 10 20 50 100 200 500 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 4 MJE5850, MJE5851, MJE5852 Table 1. Test Conditions for Dynamic Performance VCEO(sus) RBSOA AND INDUCTIVE SWITCHING +V RESISTIVE SWITCHING 50 mF + − 0.0025 mF −10 V 20 INPUT CONDITIONS 0.2 mF 1 0.1 mF INPUT +V 0 PW Varied to Attain IC = 100 mA 1/2 W CIRCUIT VALUES Lcoil = 180 mH Rcoil = 0.05 W VCC = 20 V TEST CIRCUITS INPUT SEE ABOVE FOR DETAILED CONDITIONS 1N4937 OR EQUIVALENT Vclamp 2 TURN−OFF TIME Use inductive switching driver as the input to the resistive test circuit. + 50 mF −V VCC = 250 V RL = 62 W Pulse Width = 10 ms Vclamp = 250 V RB adjusted to attain desired IB1 OUTPUT WAVEFORMS RESISTIVE TEST CIRCUIT t1 Adjusted to Obtain IC IC TUT IB1 adjusted to obtain the forced hFE desired 1 MJE15028W 0.1 mF −V adjusted to obtain desired IB1 + V adjusted to obtain desired VBE(off) 1 IB1 1W2 500 W − INDUCTIVE TEST CIRCUIT 2 1N4934 0.2 mF Lcoil = 80 mH, VCC = 10 V Rcoil = 0.7 W 1 0.0033 mF 500 W 1/2 W 50 W 2W TURN−ON TIME 1/2 W 500 W 1/2 W 0 2 0.1 mF MJE15029 500 W Rcoil ICM tf Clamped t Lcoil t1 t1 ≈ tf t2 ≈ VCC VCE VCEM RS = 0.1 W Vclamp t TIM E t2 Lcoil (ICM) TUT VCC RL 1 Lcoil (ICM) 2 VCC VClamp Test Equipment Scope — Tektronix 475 or Equivalent 1.0 3.0 IC = 4 A IC/IB = 4 TJ = 25°C VCE 10% 2% ICM ICM tc tfi tsr trv tti IC 90% ICM ICM VCEM t c , CROSSOVER TIME (μs) IB 10% 90% IB1 VCEM 0.8 2.7 2.4 2.1 tsv 100°C 0.6 tsv 25°C 1.8 1.5 0.4 1.2 0.9 0.2 0.6 tc 25°C Vclamp 0.3 0 TIME 0 1 2 3 4 5 6 7 VBE, BASE−EMITTER VOLTAGE (VOLTS) Figure 7. Inductive Switching Measurements Figure 8. Inductive Switching Times http://onsemi.com 5 8 0 t sv, VOLTAGE STORAGE TIME (μs) tc 100°C MJE5850, MJE5851, MJE5852 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10−90% VCEM tfi = Current Fall Time, 90−10% ICM tti = Current Tail, 10−2% ICM tc = Crossover Time,10% VCEM to 10% ICM An enlarged portion of the inductive switching waveform is shown in Figure 7 to aid on the visual identity of these terms. 1.0 0.7 0.5 10 VCC = 250 V IC/IB = 4 TJ = 25°C 0.3 0.7 ts 0.2 t, TIME (s) μ t, TIME (s) μ For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN−222A: PSWT = 1/2 VCCIC(tc)f In general, t rv + t fi ] t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (t c and tsv) which are guaranteed at 100_C. tr 0.1 0.07 0.05 0.4 VCC = 250 V IC/IB = 4 VBE(off) = 5 V TJ = 25°C 0.3 0.2 0.03 td 0.02 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.01 0.1 1 0.7 0.5 0.3 0.2 tf 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 0.1 10 0.1 2.0 4.0 7.0 10 Figure 9. Turn−On Switching Times Figure 10. Turn−Off Switching Time D = 0.5 0.2 0.1 ZqJC(t) = r(t) RqJC RqJC = 1.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMPS) 0.1 0.07 0.05 0.3 IC, COLLECTOR CURRENT (AMPS) 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 20 Figure 11. Typical Thermal Response [ZqJC(t)] http://onsemi.com 6 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1k MJE5850, MJE5851, MJE5852 The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown. SAFE OPERATING AREA INFORMATION FORWARD BIAS 20 IC, COLLECTOR CURRENT (AMPS) There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 15. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 10 5.0 5 ms 2.0 TC = 25°C 1.0 1 ms dc 0.5 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMITMJE5850 MJE5851 MJE5852 200 300 400 500 7.0 10 20 40 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.2 0.1 0.05 0.02 Figure 12. Maximum Forward Bias Safe Operating Area IC, COLLECTOR CURRENT (AMPS) 8.0 REVERSE BIAS 7.0 IC/IB = 4 VBE(off) = 2 V to 8 V TJ = 100°C 6.0 5.0 For inductive loads, high voltage and high current must be sustained simultaneously during turn−off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage−current condition allowable during reverse biased turn−off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the RBSOA characteristics. 4.0 MJE5850 MJE5851 MJE5852 3.0 2.0 1.0 0 100 200 300 400 500 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. RBSOA, Maximum Reverse Bias Safe Operating Area 3.5 1 IB2(pk) (AMPS) POWER DERATING FACTOR IC = 4 A IB1 = 1 A TJ = 25°C 3.0 2.5 2.0 1.5 1.0 0 2 4 6 0.6 THERMAL DERATING 0.4 0.2 0 8 SECOND BREAKDOWN DERATING 0.8 20 40 60 80 100 120 140 VBE(off), BASE−EMITTER VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C) Figure 14. Peak Reverse Base Current Figure 15. Forward Bias Power Derating http://onsemi.com 7 160 MJE5850, MJE5851, MJE5852 PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA SEATING PLANE −T− B C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 BASE COLLECTOR EMITTER COLLECTOR SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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