BUH100G SWITCHMODEt NPN Silicon Planar Power Transistor The BUH100G has an application specific state−of−art die designed for use in 100 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current during either the startup conditions or under a short circuit across the load. Features • Improved Efficiency Due to the Low Base Drive Requirements: • • • High and Flat DC Current Gain hFE Fast Switching Robustness Thanks to the Technology Developed to Manufacture this Device ON Semiconductor Six Sigma Philosophy Provides Tight and Reproducible Parametric Distributions These Devices are Pb−Free and are RoHS Compliant* http://onsemi.com POWER TRANSISTORS 10 AMPERES 700 VOLTS − 100 WATTS MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Sustaining Voltage Rating VCEO 400 Vdc Collector−Base Breakdown Voltage VCBO 700 Vdc Collector−Emitter Breakdown Voltage VCES 700 Vdc Emitter−Base Voltage VEBO 10 Vdc Collector Current − Continuous − Peak (Note 1) IC ICM 10 20 Adc Base Current − Continuous − Peak (Note 1) IB IBM 4 10 Adc PD 100 0.8 W W/_C TJ, Tstg −60 to 150 _C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.25 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes1/8″ from Case for 5 Seconds TL 260 _C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Temperature TO−220AB CASE 221A−09 STYLE 1 1 2 3 MARKING DIAGRAM BUH100G THERMAL CHARACTERISTICS Characteristics AY WW A Y WW G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev. 5 1 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping BUH100G TO−220AB (Pb−Free) 50 Units / Rail Publication Order Number: BUH100/D BUH100G ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 400 460 Vdc Collector−Base Breakdown Voltage (ICBO = 1 mA) VCBO 700 860 Vdc Emitter−Base Breakdown Voltage (IEBO = 1 mA) VEBO 10 12.5 Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO 100 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25°C @ TC = 125°C ICES 100 1000 mAdc Collector Base Current (VCB = Rated VCBO, VEB = 0) @ TC = 25°C @ TC = 125°C ICBO 100 1000 mAdc IEBO 100 mAdc Emitter−Cutoff Current (VEB = 9 Vdc, IC = 0) ON CHARACTERISTICS Base−Emitter Saturation Voltage (IC = 5 Adc, IB = 1 Adc) @ TC = 25°C VBE(sat) 1 1.1 Vdc Collector−Emitter Saturation Voltage (IC = 5 Adc, IB = 1 Adc) @ TC = 25°C @ TC = 125°C VCE(sat) 0.37 0.37 0.6 0.6 Vdc (IC = 7 Adc, IB = 1.5 Adc) @ TC = 25°C @ TC = 125°C 0.5 0.6 0.75 1.5 Vdc DC Current Gain(IC = 1 Adc, VCE = 5 Vdc) @ TC = 25°C @ TC = 125°C (IC = 5 Adc, VCE = 5 Vdc) hFE 15 16 24 28 @ TC = 25°C @ TC = 125°C 10 10 15 14.5 (IC = 7 Adc, VCE = 5 Vdc) @ TC = 25°C @ TC = 125°C 8 7 12 10.5 (IC = 10 Adc, VCE = 5 Vdc) @ TC = 25°C @ TC = 125°C 6 4 9.5 8 DYNAMIC SATURATION VOLTAGE V @ TC = 125°C 2.1 V @ TC = 25°C 1.7 V @ TC = 125°C 5 V fT 23 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Cob 100 150 pF Input Capacitance (VEB = 8 Vdc, f = 1 MHz) Cib 1300 1750 pF IC = 5 Adc, IB1 = 1 Adc VCC = 300 V IC = 7.5 Adc, IB1 = 1.5 Adc VCC = 300 V @ TC = 25°C VCE(dsat) 1.1 Dynamic Saturation Voltage: Determined 3 ms after rising IB1 reaches 90% of final IB1 (See Figure 19) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz) http://onsemi.com 2 BUH100G ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 ms) Turn−on Time Turn−off Time Turn−on Time Turn−off Time Turn−on Time Turn−off Time Turn−on Time Turn−off Time IC = 1 Adc, IB1 = 0.2 Adc IB2 = 0.2 Adc VCC = 300 Vdc IC = 1 Adc, IB1 = 0.2 Adc IB2 = 0.4 Adc VCC = 300 Vdc IC = 5 Adc, IB1 = 1 Adc IB2 = 1 Adc VCC = 300 Vdc IC = 7.5 Adc, IB1 = 1.5 Adc IB2 = 1.5 Adc VCC = 300 Vdc @ TC = 25°C @ TC = 125°C ton 130 140 200 ns @ TC = 25°C @ TC = 125°C toff 6.8 8.5 8 ms @ TC = 25°C @ TC = 125°C ton 140 150 200 ns @ TC = 25°C @ TC = 125°C toff 3.4 4.3 4 ms @ TC = 25°C @ TC = 125°C ton 250 800 500 ns @ TC = 25°C @ TC = 125°C toff 2.9 3.6 3.5 ms @ TC = 25°C @ TC = 125°C ton 500 900 700 ns @ TC = 25°C @ TC = 125°C toff 2.1 2.5 2.5 ms SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time @ TC = 25°C @ TC = 125°C tfi 150 180 250 ns @ TC = 25°C @ TC = 125°C tsi 5.1 5.8 6 ms Crossover Time @ TC = 25°C @ TC = 125°C tc 230 300 325 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 150 170 250 ns @ TC = 25°C @ TC = 125°C tsi 2.5 2.8 3 ms Crossover Time @ TC = 25°C @ TC = 125°C tc 260 300 350 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 100 140 150 ns @ TC = 25°C @ TC = 125°C tsi 2.9 4.6 3.5 ms Crossover Time @ TC = 25°C @ TC = 125°C tc 220 450 300 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 100 150 150 ns @ TC = 25°C @ TC = 125°C tsi 2 2.5 2.5 ms @ TC = 25°C @ TC = 125°C tc 250 475 350 ns Storage Time Storage Time Storage Time Storage Time Crossover Time IC = 1 Adc IB1 = 0.2 Adc IB2 = 0.2 Adc IC = 1 Adc IB1 = 0.2 Adc IB2 = 0.5 Adc IC = 5 Adc IB1 = 1 Adc IB2 = 1 Adc IC = 7.5 Adc IB1 = 1.5 Adc IB2 = 1.5 Adc http://onsemi.com 3 BUH100G TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 3 V TJ = 125°C TJ = -20°C 10 1 0.001 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V TJ = 25°C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = 125°C TJ = -20°C 10 1 0.001 10 Figure 1. DC Current Gain @ 1 Volt 10 10 VCE = 5 V IC/IB = 5 TJ = 125°C TJ = -20°C 10 1 0.01 VCE , VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 2. DC Current Gain @ 3 Volt 100 TJ = 25°C 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 1 TJ = 25°C 0.1 TJ = -20°C TJ = 125°C 0.01 0.001 100 Figure 3. DC Current Gain @ 5 Volt 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 10 Figure 4. Collector−Emitter Saturation Voltage 1.5 10 IC/IB = 10 IC/IB = 5 VBE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) TJ = 25°C 1 TJ = 25°C 0.1 TJ = -20°C TJ = 125°C 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 1 TJ = -20°C 0.5 TJ = 125°C 0 0.001 10 TJ = 25°C Figure 5. Collector−Emitter Saturation Voltage 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 6. Base−Emitter Saturation Region http://onsemi.com 4 10 BUH100G TYPICAL STATIC CHARACTERISTICS 2 1.5 TJ = 25°C VCE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) IC/IB = 10 1 TJ = -20°C TJ = 25°C 0.5 TJ = 125°C 15 A 10 A 1.5 8A 5A 1 3A 2A 0.5 VCE(sat) (IC = 1 A) 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0 0.01 10 10 Figure 8. Collector Saturation Region Figure 7. Base−Emitter Saturation Region 10000 900 TJ = 25°C TJ = 25°C f(test) = 1 MHz Cib 1000 100 BVCER @ 10 mA 800 BVCER (VOLTS) C, CAPACITANCE (pF) 0.1 1 IB, BASE CURRENT (A) 700 600 Cob 500 BVCER(sus) @ 500 mA, 25 mH 400 10 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 10 Figure 9. Capacitance 100 1000 RBE (W) 10000 Figure 10. Resistive Breakdown http://onsemi.com 5 100000 BUH100G TYPICAL SWITCHING CHARACTERISTICS 2500 10 IB1 = IB2 VCC = 300 V PW = 40 ms 8 IC/IB = 10 TJ = 125°C TJ = 25°C 1500 t, TIME (s) μ t, TIME (ns) 2000 1000 IB1 = IB2 VCC = 300 V PW = 20 ms TJ = 125°C TJ = 25°C 6 IC/IB = 5 4 125°C 2 500 IC/IB = 10 IC/IB = 5 25°C 0 0 0 2 4 6 8 IC, COLLECTOR CURRENT (AMPS) 10 0 Figure 11. Resistive Switching Time, ton 6 4 8 IC, COLLECTOR CURRENT (AMPS) 10 Figure 12. Resistive Switch Time, toff 7 6 5 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH IC/IB = 10 5 t, TIME (s) μ IC/IB = 5 t, TIME (s) μ 2 3 4 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 3 2 TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 1 1 0 1 7 4 IC, COLLECTOR CURRENT (AMPS) 10 1 Figure 13. Inductive Storage Time, tsi 7 4 IC, COLLECTOR CURRENT (AMPS) 10 Figure 13 Bis. Inductive Storage Time, tsi 600 800 TJ = 125°C TJ = 25°C 600 tc t, TIME (ns) 400 TJ = 125°C TJ = 25°C tc t, TIME (ns) IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH tfi 200 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 400 tfi 200 0 0 1 4 7 IC, COLLECTOR CURRENT (AMPS) 10 1 Figure 14. Inductive Storage Time, tc & tfi @ IC/IB = 5 4 7 IC, COLLECTOR CURRENT (AMPS) Figure 15. Inductive Storage Time, tc & tfi @ IC/IB = 10 http://onsemi.com 6 10 BUH100G TYPICAL SWITCHING CHARACTERISTICS 4 200 3 150 IC = 5 A t fi , FALL TIME (ns) tsi , STORAGE TIME (μs) IC = 7.5 A 2 IC = 7.5 A IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 1 TJ = 125°C TJ = 25°C 0 2 4 6 hFE, FORCED GAIN 100 IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 50 8 IC = 5 A TJ = 125°C TJ = 25°C 0 10 3 4 Figure 16. Inductive Storage Time 6 7 hFE, FORCED GAIN 5 8 10 9 Figure 17. Inductive Fall Time 800 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH t c , CROSSOVER TIME (ns) 700 600 IC = 7.5 A 500 400 300 200 IC = 5 A TJ = 125°C TJ = 25°C 100 3 4 5 6 7 hFE, FORCED GAIN 8 9 10 Figure 18. Inductive Crossover Time, tc 10 VCE IC 9 90% IC 8 dyn 1 ms 7 dyn 3 ms tfi tsi 6 10% IC 10% Vclamp Vclamp 5 0V tc 4 90% IB 1 ms IB 90% IB1 IB 3 2 1 3 ms 0 0 TIME Figure 19. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 5 6 7 Figure 20. Inductive Switching Measurements http://onsemi.com 7 8 BUH100G Table 1. Inductive Load Switching Drive Circuit +15 V 1 mF 150 W 3W 100 W 3W IC PEAK 100 mF MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 MPF930 +10 V Iout IB A COMMON 50 W MJE210 500 mF IB2 RB2 MTP12N10 150 W 3W V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 V IC(pk) = 100 mA 1 mF -Voff Inductive Switching L = 200 mH RB2 = 0 VCC = 15 V RB1 selected for desired IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 V RB1 selected for desired IB1 TYPICAL THERMAL RESPONSE POWER DERATING FACTOR 1 TJ(pk) may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 100 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 160 IC, COLLECTOR CURRENT (AMPS) 0 20 Figure 21. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC −VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21. 1 ms 10 10 ms 1 ms 5 ms 1 DC EXTENDED SOA 0.1 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 22. Forward Bias Safe Operating Area http://onsemi.com 8 BUH100G IC, COLLECTOR CURRENT (AMPS) 12 GAIN ≥ 5 TC ≤ 125°C LC = 2 mH 10 8 6 4 -5 V 2 0V -1.5 V 0 200 300 400 500 600 700 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 800 Figure 23. Reverse Bias Safe Operating Area r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 0.1 P(pk) 0.1 0.05 t1 0.02 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 RqJC(t) = r(t) RqJC RqJC = 1.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 10 t, TIME (ms) Figure 24. Typical Thermal Response (ZqJC(t)) for BUH100 http://onsemi.com 9 100 1000 BUH100G PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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