ON Semiconductor BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications such as: • • • • • 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V(BR)CEO 850–1000 VOLTS V(BR)CEX 175 WATTS Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits • Fast Turn–Off Times • • 60 ns Inductive Fall Time — 25C (Typ) 120 ns Inductive Crossover Time — 25C (Typ) Operating Temperature Range –65 to +200C 100C Performance Specified for: Reverse–Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltage Leakage Currents (125C) CASE 1–07 TO–204AA (TO–3) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage (VBE = – 1.5 V) Symbol BUX48 BUX48A Unit VCEO(sus) 400 450 Vdc VCEX 850 1000 Vdc Emitter Base Voltage VEB 7 Vdc Collector Current — Continuous — Peak (1) — Overload IC ICM IOI 15 30 60 Adc Base Current — Continuous — Peak (1) IB IBM 5 20 Adc Total Power Dissipation — TC = 25C — TC = 100C Derate above 25C PD 175 100 1 Watts TJ, Tstg –65 to +200 C Symbol Max Unit RθJC 1 C/W TL 275 C Operating and Storage Junction Temperature Range W/C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 9 1 Publication Order Number: BUX48/D BUX48 BUX48A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 400 450 — — — — — — — — 0.2 2 — — — — 0.5 3 IEBO — — 0.1 mAdc V(BR)EBO 7 — — Vdc OFF CHARACTERISTICS (1) Collector–Emitter Sustaining Voltage (Table 1) (IC = 200 mA, IB = 0) L = 25 mH VCEO(sus) BUX48 BUX48A Collector Cutoff Current (VCEX = Rated Value, VBE(off) = 1.5 Vdc) (VCEX = Rated Value, VBE(off) = 1.5 Vdc, TC = 125C) Vdc ICEX Collector Cutoff Current (VCE = Rated VCEX, RBE = 10 Ω) mAdc ICER TC = 25C TC = 125C Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) Emitter–Base Breakdown Voltage (IE = 50 mA – IC = 0) mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 12 RBSOA See Figure 13 ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) hFE BUX48 BUX48A Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 15 Adc, IB = 3 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100C) (IC = 8 Adc, IB = 1.6 Adc) (IC = 12 Adc, IB = 2.4 Adc) (IC = 8 Adc, IB = 1.6 Adc, TC = 100C) 8 8 — — — — — — — — — — — — — — — — 1.5 5 2 1.5 5 2 — — — — — — — — 1.6 1.6 1.6 1.6 Cob — — 350 pF td — 0.1 0.2 µs tr — 0.4 0.7 ts — 1.3 2 tf — 0.2 0.4 tsv — 1.3 — tfi — 0.06 — tsv — 1.5 2.5 tc — 0.3 0.6 tfi — 0.17 0.35 VCE(sat) BUX48 BUX48A Base–Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100C) (IC = 8 Adc, IB = 1.6 Adc) (IC = 8 Adc, IB = 1.6 Adc, TC = 100C) Vdc VBE(sat) BUX48 BUX48A Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time Fall Time IC = 10 A A, IB = 2 A IC = 8 A, IB = 1.6 A Duty Cycle = 2%, VBE(off) = 5 V Tp = 30 µs, µs VCC = 300 V BUX48 BUX48A Inductive Load, Clamped (Table 1) Storage Time Fall Time Storage Time Crossover Time Fall Time IC = 10 A IB1 = 2 A IC = 8 A IB1 = 1.6 A A BUX48 BUX48 (TC = 25C) ((TC = 100C)) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%. Vcl = 300 V, VBE(off) = 5 V, Lc = 180µH http://onsemi.com 2 µs BUX48 BUX48A 50 90% hFE, DC CURRENT GAIN 30 20 10% 10 7 5 3 2 VCE = 5 V 1 1 2 3 5 8 10 20 IC, COLLECTOR CURRENT (AMPS) 30 50 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) DC CHARACTERISTICS 10 5 3 IC = 5 A 1 0.7 0.5 0.3 0.2 0.1 1 2 0.5 0.3 0.1 0.1 3 5 7 10 TC = 25°C 0.3 0.5 1 IB, BASE CURRENT (AMPS) 2 20 30 50 TJ = 100°C 0.5 0.3 0.1 1 0.3 3 Figure 3. Collector–Emitter Saturation Voltage Figure 4. Base–Emitter Voltage Cib TJ = 150°C 125°C 100°C 75°C 100 REVERSE 1k Cob 100 FORWARD TJ = 25°C 25°C 10-1 -0.4 10 10 k VCE = 250 V 103 101 4 TJ = 25°C 1 0.7 IC, COLLECTOR CURRENT (AMPS) 102 3 2 IC, COLLECTOR CURRENT (AMPS) 104 IC, COLLECTOR CURRENT (A) µ VBE, BASE-EMITTER VOLTAGE (VOLTS) 10% C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 90% 2 15 A Figure 2. Collector Saturation Region βf = 5 3 10 A 1 Figure 1. DC Current Gain 5 7.5 A -0.2 0 0.2 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 10 0.6 1 100 10 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance Figure 5. Collector Cutoff Region http://onsemi.com 3 1000 BUX48 BUX48A Table 1. Test Conditions for Dynamic Performance INPUT CONDITIONS VCEO(sus) +10 V RBSOA AND INDUCTIVE SWITCHING 1 20 220 MM3735 TUT SEE ABOVE FOR DETAILED CONDITIONS IC(pk) t1 VCC tf Lcoil (IC RL 1 2 ) pk VCC VClamp Test Equipment Scope — Tektronix 475 or Equivalent t t2 TUT ) pk VCC 10 IB2(pk) , BASE CURRENT (AMPS) 90% IC(pk) trv tfi 10% VCE(pk) 90% IB1 t2 ≈ Vclamp tti tc IB Lcoil (IC t VCE(pk) 90% VCE(pk) VCE t1 ≈ VCE VCE or IC pk tsv VCC = 300 V RL = 83 Ω Pulse Width = 10 µs RESISTIVE TEST CIRCUIT tf Clamped TIME IC VCC IC RS = 0.1 Ω 2 0.22 µF TURN–OFF TIME Use inductive switching driver as the input to the resistive test circuit. t1 Adjusted to Obtain IC Lcoil Vclamp MR854 2N6339 OUTPUT WAVEFORMS Rcoil 1N4937 OR EQUIVALENT D3 IB1 adjusted to obtain the forced hFE desired Vclamp = 300 V RB ADJUSTED TO ATTAIN DESIRED IB1 INDUCTIVE TEST CIRCUIT INPUT D4 33 2W Lcoil = 180 µH Rcoil = 0.05 Ω VCC = 20 V Ib2 ADJUST dTb ADJUST 160 2 IB1 Ib1 ADJUST 0.1 µF 22 2N3763 100 680 pF 1 22 680 pF PULSES δ = 3% TURN–ON TIME MR854 D1D2D3D4 1N4934 Lcoil = 25 mH, VCC = 10 V Rcoil = 0.7 Ω 1 +10 V 2N6438 D3 680 pF PW Varied to Attain IC = 200 mA TEST CIRCUITS 160 0 2 CIRCUIT VALUES 100 22 µF D1 33 2W RESISTIVE SWITCHING 10% IC pk 2% IC 6 4 2 0 TIME βf = 5 IC = 10 A 8 0 1 2 3 4 5 VBE(off), BASE-EMITTER VOLTAGE (VOLTS) Figure 7. Inductive Switching Measurements Figure 8. Peak–Reverse Current http://onsemi.com 4 6 BUX48 BUX48A SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222: PSWT = 1/2 VCCIC(tc)f In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100C. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10–90% Vclamp tfi = Current Fall Time, 90–10% IC tti = Current Tail, 10–2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. INDUCTIVE SWITCHING 1 5 3 0.5 t, TIME (s) µ TC = 25°C 1 0.7 0.5 0.3 TC = 100°C TC = 25°C 0.2 0.1 TC = 25°C 0.05 tc tfi 0.03 0.2 0.02 βf = 5 0.1 TC = 100°C 0.3 TC = 100°C 1 10 20 3 5 7 IC, COLLECTOR CURRENT (AMPS) 2 0.01 50 30 βf = 5 1 2 Figure 9. Storage Time, tsv 3 2 3 2 tsv 1 1 0.5 0.5 0.3 0.2 tc 0.1 tfi 0.05 TC = 25°C IC = 10 A VBE(off) = 5 V 0 1 2 3 6 4 5 βf, FORCED GAIN 7 30 50 8 9 TC = 25°C IC = 10 A βf = 5 tsv 0.3 0.2 tc 0.1 tfi 0.05 0.03 0.02 0.01 3 5 7 10 20 IC, COLLECTOR CURRENT (AMPS) Figure 10. Crossover and Fall Times t, TIME (s) µ t, TIME (s) µ 2 0.03 0.02 0.01 10 0 Figure 11. Turn–Off Times versus Forced Gain 1 2 3 4 5 Ib2/Ib1 6 7 8 9 Figure 12. Turn–Off Times versus Ib2/Ib1 http://onsemi.com 5 10 BUX48 BUX48A IC, COLLECTOR CURRENT (AMPS) The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown. 30 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 13 may be found at any case temperature by using the appropriate curve on Figure 15. TJ(pk) may be calculated from the data in Figure 13. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 5 1 ms DC 2 1 0.5 0.2 TC = 25°C 0.1 LIMIT ONLY FOR TURN ON tr ≤ 0.7 µs 0.05 0.02 0.01 1 2 5 10 20 50 100 200 500 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Forward Bias Safe Operating Area REVERSE BIAS 40 30 BUX48 20 VBE(off) = 5 V 10 0 For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current conditions during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 14 gives RBSOA characteristics. BUX48A TC = 100°C IC/IB1 ≥ 5 0 200 400 600 800 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 14. Reverse Bias Safe Operating Area 100 POWER DERATING FACTOR (%) IC, COLLECTOR CURRENT (AMPS) 50 SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 20 0 0 40 80 120 TC, CASE TEMPERATURE (°C) 160 Figure 15. Power Derating http://onsemi.com 6 200 BUX48 BUX48A r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 SINGLE PULSE 0.02 0.01 0.02 RθJC(t) = r(t) RθJC θJC = 1°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) 0.05 0.1 0.2 1 0.5 2 5 10 t, TIME (ms) 20 50 P(pk) t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 100 200 500 1000 2000 Figure 16. Thermal Response OVERLOAD CHARACTERISTICS IC, COLLECTOR CURRENT (AMPS) 100 OLSOA TC = 25°C OLSOA applies when maximum collector current is limited and known. A good example is a circuit where an inductor is inserted between the transistor and the bus, which limits the rate of rise of collector current to a known value. If the transistor is then turned off within a specified amount of time, the magnitude of collector current is also known. Maximum allowable collector–emitter voltage versus collector current is plotted for several pulse widths. (Pulse width is defined as the time lag between the fault condition and the removal of base drive.) Storage time of the transistor has been factored into the curve. Therefore, with bus voltage and maximum collector current known, Figure 17 defines the maximum time which can be allowed for fault detection and shutdown of base drive. OLSOA is measured in a common–base circuit (Figure 19) which allows precise definition of collector–emitter voltage and collector current. This is the same circuit that is used to measure forward–bias safe operating area. 80 BUX48A 60 tp = 10 µs 40 BUX48 20 100 300 400 450 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 500 Figure 17. Rated Overload Safe Operating Area (OLSOA) 5 IC (AMP) 4 3 RBE = 10 Ω RBE = 100 Ω 500 µF 500 V RBE = 2.2 Ω 2 1 VCC Notes: • VCE = VCC + VBE • Adjust pulsed current source for desired IC, tp RBE = 0 0 2 4 6 dV/dt (KV/µs) 8 VEE 10 Figure 19. Overload SOA Test Circuit Figure 18. IC = f(dV/dt) http://onsemi.com 7 BUX48 BUX48A PACKAGE DIMENSIONS TO–204AA (TO–3) CASE 1–07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. A N C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 M SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: [email protected] CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 8 BUX48/D