MBRB30H30CT-1G, MBR30H30CTG SWITCHMODE™ Power Rectifiers 30 V, 30 A http://onsemi.com Features and Benefits •Low Forward Voltage •Low Power Loss/High Efficiency •High Surge Capacity •150°C Operating Junction Temperature •30 A Total (15 A Per Diode Leg) •Guard-Ring for Stress Protection •This is a Pb-Free Device* SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 30 VOLTS 1 2, 4 3 Applications •Power Supply - Output Rectification •Power Management •Instrumentation 4 MARKING DIAGRAM I2PAK (TO-262) CASE 418D PLASTIC Mechanical Characteristics: •Case: Epoxy, Molded •Epoxy Meets UL 94 V-0 @ 0.125 in •Weight: 1.5 Grams (I2PAK) (Approximately) AYWW B30H30G AKA 12 3 1.9 Grams (TO-220) (Approximately) 4 •Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable •Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO-220AB CASE 221A PLASTIC 1 2 AYWW B30H30G AKA 3 A Y WW B30H30 G AKA = Assembly Location = Year = Work Week = Device Code = Pb-Free Package = Diode Polarity ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2007 October, 2007 - Rev. 3 1 Device Package Shipping MBRB30H30CT-1G TO-262 (Pb-Free) 50 Units/Rail MBR30H30CTG TO-220 (Pb-Free) 50 Units/Rail Publication Order Number: MBRB30H30CT-1/D MBRB30H30CT-1G, MBR30H30CTG MAXIMUM RATINGS Please See the Table on the Following Page *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 2 MBRB30H30CT-1G, MBR30H30CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (Rated VR) TC = 138°C IF(AV) 15 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 30 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 260 A TJ -55 to +150 °C Storage Temperature Tstg *55 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms WAVAL 250 mJ > 400 > 8000 V 2.0 70 °C/W Operating Junction Temperature (Note 1) Controlled Avalanche Energy (see test conditions in Figures 9 and 10) ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance - Junction-to-Case - Junction-to-Ambient RqJC RqJA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 15 A, TC = 25°C) (IF = 15 A, TC = 125°C) (IF = 30 A, TC = 25°C) (IF = 30 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR V 0.48 0.40 0.55 0.53 mA 0.8 130 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 3 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRB30H30CT-1G, MBR30H30CTG 100 TJ = 125°C 10 TJ = 25°C 1 0.1 0 0.1 0.2 0.4 0.3 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100 TJ = 125°C 10 TJ = 25°C 1 0.1 0 0.1 1.0E-01 TJ = 125°C 0.6 0.7 0.8 0.9 1.0 TJ = 125°C 1.0E-02 1.0E-03 1.0E-03 TJ = 25°C 1.0E-04 5 10 15 1.0E-04 25 20 30 1.0E-05 0 TJ = 25°C 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 30 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) 0.5 1.0E-01 1.0E-02 dc 25 SQUARE WAVE 15 10 5 0 100 0.4 1.0E-00 IR, REVERSE CURRENT (AMPS) 1.0E-00 20 0.3 Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 1.0E-05 0 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 110 120 130 140 150 160 16 14 12 SQUARE 10 8 DC 6 4 2 0 0 5 10 15 20 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 4 30 25 MBRB30H30CT-1G, MBR30H30CTG 3000 TJ = 25°C C, CAPACITANCE (pF) 2500 2000 1500 1000 500 0 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Typical Capacitance for MBR30H30CTG 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 8. Thermal Response Junction-to-Case http://onsemi.com 5 10 100 1000 MBRB30H30CT-1G, MBR30H30CTG +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH ID ID IL DUT S1 VDD t0 Figure 9. Test Circuit t1 t2 t Figure 10. Current-Voltage Waveforms elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The unclamped inductive switching circuit shown in Figure 9 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 BV –V DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 http://onsemi.com 6 Ǔ MBRB30H30CT-1G, MBR30H30CTG PACKAGE DIMENSIONS I2PAK (TO-262) CASE 418D-01 ISSUE D C E V -B- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F -TSEATING PLANE K S J G D 3 PL 0.13 (0.005) M T B H M http://onsemi.com 7 INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 MBRB30H30CT-1G, MBR30H30CTG PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AE SEATING PLANE -TB C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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