A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V 500mΩ @ VGS = 1.5V • • • • • • • • ID TA = +25°C (Note 5) 1.30A 1.11A 0.91A 0.82A Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data • • Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (approximate) • • Applications • 2 Footprint of just 0.6mm – thirteen times smaller than SOT23 0.4mm profile – ideal for low profile applications Low Gate Threshold Voltage Fast Switching Speed ESD Protected Gate 2KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Load switch • Drain X2-DFN1006-3 Body Diode S D Gate G Gate Protection Diode ESD PROTECTED TO 2kV Top View Internal Schematic Bottom View Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN2300UFB4-7B Notes: Marking NL Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information DMN2300UFB4-7B NL = Product Type Marking Code NL Top View Bar Denotes Gate and Source Side DMN2300UFB4 Document number: DS35269 Rev. 4 - 2 1 of 7 www.diodes.com September 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFB4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) Steady State Unit V V IDM Value 20 ±8 1.30 0.96 6 Symbol PD RθJA TJ, TSTG Value 500 250 -55 to +150 Unit mW °C/W °C TA = +25°C TA = +85°C ID Pulsed Drain Current (Note 6) A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 1 10 V µA µA VGS = 0V, ID = 10µA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD — — — — — — 0.7 0.95 175 240 360 500 — 1.2 V Static Drain-Source On-Resistance 0.45 — — — — 40 — VDS = VGS, ID = 250μA VGS = 4.5V, ID = 1A VGS = 2.5V, ID = 750mA VGS = 1.8V, ID = 500mA VGS = 1.5V, ID = 200mA VDS = 3V, ID = 30mA VGS = 0V, IS = 300mA Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — 64.3 6.1 4.5 70 1.6 0.2 0.2 3.5 2.8 38 13 — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ mS V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 1A VDS = 10V, ID = 1A VGS = 10V, RG = 6Ω 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. DMN2300UFB4 Document number: DS35269 Rev. 4 - 2 2 of 7 www.diodes.com September 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFB4 2.0 2.0 VGS = 4.5V VDS = 5V VGS = 2.5V VGS = 1.8V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.0V 1.5 VGS = 1.5V 1.0 0.5 1.5 1.0 TA = 150°C 0.5 TA = 125°C VGS = 1.2V TA = 85°C TA = 25°C TA = -55°C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic VGS = 1.5V 0.8 0.6 VGS = 1.8V VGS = 2.5V 0.2 VGS = 4.5V 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2.0 0.6 VGS = 1.8V 0.5 T A = 125°C T A = 150°C 0.4 0.3 TA = 85°C TA = 25°C 0.2 TA = -55°C 0.1 0 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN2300UFB4 Document number: DS35269 Rev. 4 - 2 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.0 0.4 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 1.0 3 of 7 www.diodes.com 0.5 1.0 1.5 2.0 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristic 3.0 0.6 VGS = 4.5V 0.5 0.4 0.3 TA = 125°C TA = 150°C 0.2 TA = 85°C TA = 25°C 0.1 0 TA = -55°C 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 1.0 0.6 VGS = 1.5V TA = 150°C 0.5 TA TA = 8 0.4 5°C = 12 5°C 5°C TA = 2 0.3 TA = -55°C 0.2 0.1 0 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 6 Typical On-Resistance vs. Drain Current and Temperature 1.0 September 2012 © Diodes Incorporated A Product Line of Diodes Incorporated RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.7 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) DMN2300UFB4 VGS = 2.5V ID = 500mA 1.5 VGS = 4.5V ID = 1.0A 1.3 VGS = 1.8V ID = 100mA 1.1 VGS = 1.5V ID = 50mA 0.9 0.7 0.5 0.5 VGS = 1.8V ID = 100mA VGS = 1.5V ID = 50mA 0.4 0.3 0.2 VGS = 4.5V ID = 1.0A VGS = 2.5V ID = 500mA 0.1 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 2.0 1.2 1.0 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.6 ID = 1mA 0.8 0.6 ID = 250µA 0.4 1.6 1.2 TA = 25°C 0.8 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 9 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 10 Diode Forward Voltage vs. Current 100,000 1,000 IGSS, LEAKAGE CURRENT (nA) IDSS, LEAKAGE CURRENT (nA) T A = 125°C 100 T A = 85°C 10 TA = 25°C TA = -55°C 1 10,000 TA = 150°C T A = 125°C 1,000 T A = 85°C TA = -55°C 10 1 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Leakage Current vs. Drain-Source Voltage DMN2300UFB4 Document number: DS35269 Rev. 4 - 2 20 4 of 7 www.diodes.com TA = 25°C 100 2 4 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (V) Figure 12 Leakage Current vs. Gate-Source Voltage September 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFB4 VGS, GATE-SOURCE VOLTAGE (V) 8 VDS = 15V ID = 1A 6 4 2 0 0 0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) Figure 14 Gate-Charge Characteristics 3 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA (t) = r(t) * R θJA RθJA = 262°C/W D = 0.02 0.01 D = 0.01 P(pk) t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMN2300UFB4 Document number: DS35269 Rev. 4 - 2 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Figure 15 Transient Thermal Response 5 of 7 www.diodes.com 10 100 1,000 September 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFB4 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A X2-DFN1006-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm A1 D b1 E e b2 L2 L3 L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C X1 X G2 G1 Y Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMN2300UFB4 Document number: DS35269 Rev. 4 - 2 6 of 7 www.diodes.com September 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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