DMN2300UFB4 - Diodes Incorporated

A Product Line of
Diodes Incorporated
DMN2300UFB4
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS
RDS(ON)
20V
175mΩ @ VGS = 4.5V
240mΩ @ VGS = 2.5V
360mΩ @ VGS = 1.8V
500mΩ @ VGS = 1.5V
•
•
•
•
•
•
•
•
ID
TA = +25°C
(Note 5)
1.30A
1.11A
0.91A
0.82A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (approximate)
•
•
Applications
•
2
Footprint of just 0.6mm – thirteen times smaller than SOT23
0.4mm profile – ideal for low profile applications
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Load switch
•
Drain
X2-DFN1006-3
Body
Diode
S
D
Gate
G
Gate
Protection
Diode
ESD PROTECTED TO 2kV
Top View
Internal Schematic
Bottom View
Source
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2300UFB4-7B
Notes:
Marking
NL
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN2300UFB4-7B
NL = Product Type Marking Code
NL
Top View
Bar Denotes Gate
and Source Side
DMN2300UFB4
Document number: DS35269 Rev. 4 - 2
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September 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
Unit
V
V
IDM
Value
20
±8
1.30
0.96
6
Symbol
PD
RθJA
TJ, TSTG
Value
500
250
-55 to +150
Unit
mW
°C/W
°C
TA = +25°C
TA = +85°C
ID
Pulsed Drain Current (Note 6)
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
—
—
—
—
—
—
1
10
V
µA
µA
VGS = 0V, ID = 10µA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
—
—
—
—
—
—
0.7
0.95
175
240
360
500
—
1.2
V
Static Drain-Source On-Resistance
0.45
—
—
—
—
40
—
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 1A
VGS = 2.5V, ID = 750mA
VGS = 1.8V, ID = 500mA
VGS = 1.5V, ID = 200mA
VDS = 3V, ID = 30mA
VGS = 0V, IS = 300mA
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
64.3
6.1
4.5
70
1.6
0.2
0.2
3.5
2.8
38
13
—
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
mS
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V,
ID = 1A
VDS = 10V, ID = 1A
VGS = 10V, RG = 6Ω
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN2300UFB4
Document number: DS35269 Rev. 4 - 2
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September 2012
© Diodes Incorporated
A Product Line of
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DMN2300UFB4
2.0
2.0
VGS = 4.5V
VDS = 5V
VGS = 2.5V
VGS = 1.8V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 2.0V
1.5
VGS = 1.5V
1.0
0.5
1.5
1.0
TA = 150°C
0.5
TA = 125°C
VGS = 1.2V
TA = 85°C
TA = 25°C
TA = -55°C
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
VGS = 1.5V
0.8
0.6
VGS = 1.8V
VGS = 2.5V
0.2
VGS = 4.5V
0
0
0.4
0.8
1.2
1.6
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2.0
0.6
VGS = 1.8V
0.5
T A = 125°C
T A = 150°C
0.4
0.3
TA = 85°C
TA = 25°C
0.2
TA = -55°C
0.1
0
0
0.2
0.4
0.6
0.8
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance
vs. Drain Current and Temperature
DMN2300UFB4
Document number: DS35269 Rev. 4 - 2
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.0
0.4
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
1.0
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0.5
1.0
1.5
2.0
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
3.0
0.6
VGS = 4.5V
0.5
0.4
0.3
TA = 125°C
TA = 150°C
0.2
TA = 85°C
TA = 25°C
0.1
0
TA = -55°C
0
0.2
0.4
0.6
0.8
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance
vs. Drain Current and Temperature
1.0
0.6
VGS = 1.5V
TA = 150°C
0.5
TA
TA = 8
0.4
5°C
= 12
5°C
5°C
TA = 2
0.3
TA = -55°C
0.2
0.1
0
0
0.2
0.4
0.6
0.8
ID, DRAIN CURRENT (A)
Figure 6 Typical On-Resistance
vs. Drain Current and Temperature
1.0
September 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.7
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
DMN2300UFB4
VGS = 2.5V
ID = 500mA
1.5
VGS = 4.5V
ID = 1.0A
1.3
VGS = 1.8V
ID = 100mA
1.1
VGS = 1.5V
ID = 50mA
0.9
0.7
0.5
0.5
VGS = 1.8V
ID = 100mA
VGS = 1.5V
ID = 50mA
0.4
0.3
0.2
VGS = 4.5V
ID = 1.0A
VGS = 2.5V
ID = 500mA
0.1
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 8 On-Resistance Variation with Temperature
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
2.0
1.2
1.0
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.6
ID = 1mA
0.8
0.6
ID = 250µA
0.4
1.6
1.2
TA = 25°C
0.8
0.4
0.2
0
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 9 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 10 Diode Forward Voltage vs. Current
100,000
1,000
IGSS, LEAKAGE CURRENT (nA)
IDSS, LEAKAGE CURRENT (nA)
T A = 125°C
100
T A = 85°C
10
TA = 25°C
TA = -55°C
1
10,000
TA = 150°C
T A = 125°C
1,000
T A = 85°C
TA = -55°C
10
1
2
4
6
8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 Typical Leakage Current
vs. Drain-Source Voltage
DMN2300UFB4
Document number: DS35269 Rev. 4 - 2
20
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TA = 25°C
100
2
4
6
8
10
12
VGS, GATE-SOURCE VOLTAGE (V)
Figure 12 Leakage Current vs. Gate-Source Voltage
September 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFB4
VGS, GATE-SOURCE VOLTAGE (V)
8
VDS = 15V
ID = 1A
6
4
2
0
0
0.5
1
1.5
2
2.5
Qg, TOTAL GATE CHARGE (nC)
Figure 14 Gate-Charge Characteristics
3
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA (t) = r(t) * R θJA
RθJA = 262°C/W
D = 0.02
0.01 D = 0.01
P(pk)
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
DMN2300UFB4
Document number: DS35269 Rev. 4 - 2
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Figure 15 Transient Thermal Response
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10
100
1,000
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DMN2300UFB4
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
X2-DFN1006-3
Dim Min
Max
Typ
A
0.40
⎯
⎯
A1
0
0.05 0.03
b1
0.10 0.20 0.15
b2
0.45 0.55 0.50
D
0.95 1.05 1.00
E
0.55 0.65 0.60
e
0.35
⎯
⎯
L1
0.20 0.30 0.25
L2
0.20 0.30 0.25
L3
0.40
⎯
⎯
All Dimensions in mm
A1
D
b1
E
e
b2
L2
L3
L1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
X1
X
G2
G1
Y
Dimensions
Z
G1
G2
X
X1
Y
C
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
Z
DMN2300UFB4
Document number: DS35269 Rev. 4 - 2
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DMN2300UFB4
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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DMN2300UFB4
Document number: DS35269 Rev. 4 - 2
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September 2012
© Diodes Incorporated