DMG4435SSS P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability NEW PRODUCT • • • • • Top View Maximum Ratings Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.072 grams (approximate) S D S D S D G D Top View Internal Schematic @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State (VGS = -4.5) TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Unit V V IDM Value -30 ±25 -7.3 -4.7 -80 Symbol PD RθJA TJ, TSTG Value 1.3 96.5 -55 to +150 Unit W °C/W °C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design. 4. Repetitive rating, pulse width limited by junction temperature. DMG4435SSS Document number: DS32041 Rev. 2 - 2 1 of 6 www.diodes.com March 2010 © Diodes Incorporated DMG4435SSS Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1.0 ±100 V μA nA VGS = 0V, ID = -1mA VDS = -30V, VGS = 0V VGS = ±25V, VDS = 0V VGS(th) -1.0 RDS (ON) - |Yfs| VSD - -2.5 16 20 29 -1.0 V Static Drain-Source On-Resistance -1.7 13 15 21 22 -0.74 VDS = VGS, ID = -250μA VGS = -20V, ID = -11A VGS = -10V, ID = -10A VGS = -5V, ID = -5A VDS = -5V, ID = -10A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1614 226 214 6.8 35.4 18.9 4.6 5.7 8.6 12.7 44.9 22.8 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -10V, VDS = -15V, ID = -10A VGS = -5V, VDS = -15V, ID = -10A VDS = -15V, VGS = -10V, RL = 1.5Ω, RGEN = 3Ω, 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 30 30 VGS = -10V VDS = -5V 25 -ID, DRAIN CURRENT (A) 25 -ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified VGS = -4.5V 20 VGS = -4.0V VGS = -3.5V 15 VGS = -3.0V 10 5 20 15 10 TA = 150°C T A = 125°C 5 TA = 85°C TA = 25°C 0 VGS = -2.2V 0 VGS = -2.5V 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG4435SSS Document number: DS32041 Rev. 2 - 2 TA = -55°C 0 2 0 2 of 6 www.diodes.com 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 March 2010 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0.04 0.03 VGS = -4.5V 0.02 VGS = -10V 0.01 0 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.06 0.05 T A = 150°C TA = 125°C 0.03 TA = 85°C TA = 25°C 0.02 TA = -55°C 0.01 0 30 0 5 10 15 20 25 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.04 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = -4.5V 0.04 1.6 1.4 VGS = -4.5V ID = -10A 1.2 VGS = -10V ID = -20A 1.0 0.8 0.03 VGS = -4.5V ID = -10A 0.02 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 2.5 25 -IS, SOURCE CURRENT (A) 30 ID = -1mA 1.5 ID = -250µA 1.0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Document number: DS32041 Rev. 2 - 2 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 20 15 T A = 25°C 10 5 0.5 DMG4435SSS -25 Fig. 6 On-Resistance Variation with Temperature 3.0 2.0 VGS = -10V ID = -20A 0.01 0.6 -50 -VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG4435SSS 3 of 6 www.diodes.com 0 0 0.2 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 March 2010 © Diodes Incorporated DMG4435SSS 10,000 10,000 -IDSS, LEAKAGE CURRENT (nA) f = 1MHz Ciss 1,000 Coss 100 10 1,000 T A = 125°C 100 T A = 85°C 10 T A = 25°C 1 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 0 10 20 -VDS, DRAIN-SOURCE VOLTAGE (V) 30 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 10 VGS(TH), GATE-THRESHOLD VOLTAGE (V) 9 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate Threshold Voltage vs. Total Gate Charge 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT Crss TA = 150°C D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 98°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 DMG4435SSS Document number: DS32041 Rev. 2 - 2 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 March 2010 © Diodes Incorporated DMG4435SSS Ordering Information (Note 7) Part Number DMG4435SSS-13 Packaging 2500 / Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Logo Part no. G4435SS YY WW Xth week: 01~53 Year: “09” = 2009 Package Outline Dimensions 0.254 NEW PRODUCT Notes: Case SO-8 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm b e D Suggested Pad Layout X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG4435SSS Document number: DS32041 Rev. 2 - 2 5 of 6 www.diodes.com March 2010 © Diodes Incorporated DMG4435SSS IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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