NSR0340P2T5G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0340P2 in a SOD−923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. http://onsemi.com Features 40 V SCHOTTKY BARRIER DIODE Very Low Forward Voltage Drop − 420 mV @ 100 mA Low Reverse Current − 0.6 mA @ 10 V Continuous Forward Current − 200 mA Power Dissipation with Minimum Trace − 190 mW Very High Switching Speed − 3.0 ns @ 10 mA Low Capacitance − 4 pF @ 5.0 V This is a Pb−Free Device 1 CATHODE Typical Applications • • • • • 1 SOD−923 CASE 514AB PLASTIC Forward Current (DC) Symbol Value Unit VR 40 V IF 200 mA Non−Repetitive Peak Forward Surge Current IFSM 1.0 A ESD Rating: ESD Human Body Model Machine Model 2 ORDERING INFORMATION MAXIMUM RATINGS Rating 1 MG G R = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS Reverse Voltage MARKING DIAGRAM 2 LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection Markets • • • • • 2 ANODE R • • • • • • • Device Package Shipping† NSR0340P2T5G SOD−923 (Pb−Free) 2 mm Pitch 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Class 2 Class A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 0 1 Publication Order Number: NSR0340P2/D NSR0340P2T5G THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Characteristic RqJA PD 520 190 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 175 570 °C/W mW TJ, Tstg −55 to +125 °C Junction and Storage Temperature Range 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Leakage (VR = 10 V) (VR = 40 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) VF Total Capacitance (VR = 5.0 V, f = 1 MHz) CT Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) trr DC Current Source + − 750 mH 50 W Output Pulse Generator 0.1 mF Min Max 0.6 4.0 5.0 20 290 420 520 320 460 560 4.0 3.0 0V IF Typ tr 10% 90% VR 0.1 mF tp Pulse Generator Output IF DUT Adjust for IRM trr RL = 50 W IRM Current Transformer 50 W Input Oscilloscope 1. 2. 3. 4. 5. iR(REC) = 1 mA Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) DC Current Source is adjusted for a Forward Current (IF) of 10 mA. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. Pulse Generator transition time << trr. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 Unit mA mV pF ns NSR0340P2T5G 10000 IR, REVERSE CURRENT (mA) 100 125°C 10 25°C 85°C 1 0.1 0 0.1 0.2 −40°C 0.3 0.4 0.5 1000 125°C 100 85°C 10 0.1 0.01 −40°C 0.001 0.0001 0.6 25°C 1 0 5 10 15 20 25 30 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Figure 3. 13 Ct, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 11 9 7 5 3 1 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Figure 4. http://onsemi.com 3 35 40 35 40 NSR0340P2T5G PACKAGE DIMENSIONS SOD−923 CASE 514AB−01 ISSUE B −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− E 1 b 2 2X 0.08 (0.0032) X Y DIM A b c D E HE L A c L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.05 0.10 0.15 MIN 0.013 0.006 0.003 0.030 0.022 0.037 0.002 INCHES NOM 0.015 0.008 0.005 0.031 0.024 0.039 0.004 MAX 0.016 0.010 0.007 0.033 0.026 0.041 0.006 SOLDERING FOOTPRINT* 0.90 0.40 0.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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