MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features http://onsemi.com • Very Low Capacitance − Less than 1.0 pF @ 0 V • Low Noise Figure − 6.0 dB Typ @ 1.0 GHz • Pb−Free Package is Available 1.0 pF SCHOTTKY BARRIER DIODE MAXIMUM RATINGS Rating Symbol Value Unit VR 7.0 Vdc Symbol Max Unit 200 1.57 mW mW/°C Reverse Voltage 1 CATHODE 2 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) @TA = 25°C Derate above 25°C 2 PD Thermal Resistance, Junction−to−Ambient RqJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1 PLASTIC SOD−323 CASE 477 STYLE 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 Minimum Pad MARKING DIAGRAM 4M M G G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mA) Symbol Min Typ Max 7.0 10 − Unit V(BR)R Diode Capacitance (VR = 0, f = 1.0 MHZ), (Note 2)* CT Reverse Leakage (VR = 3.0 V) IR Noise Figure (f = 1.0 GHz), (Note 3)* NF Forward Voltage (IF = 10 mA) VF V pF − 0.88 1.0 − 20 250 − 6.0 − nAdc dB ORDERING INFORMATION Vdc − 0.5 4M = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. 0.6 *Notes on Next Page Package Shipping† MMDL101T1 SOD−323 3000 / Tape & Reel MMDL101T1G SOD−323 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 1 1 Publication Order Number: MMDL101T1/D MMDL101T1 TYPICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 1.0 0.7 0.5 VR = 3.0 Vdc 0.2 0.1 0.07 0.05 10 TA = 85°C TA = −40°C 1.0 0.02 TA = 25°C MMBD110T1 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (°C) 120 MMBD110T1 0.1 0.3 130 0.4 Figure 1. Reverse Leakage 0.8 11 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5) 10 0.9 NF, NOISE FIGURE (dB) C, CAPACITANCE (pF) 0.7 Figure 2. Forward Voltage 1.0 0.8 0.7 9 8 7 6 5 4 3 2 MMBD110T1 0.6 0.5 0.6 VF, FORWARD VOLTAGE (VOLTS) 0 1.0 2.0 3.0 VR, REVERSE VOLTAGE (VOLTS) 1 0.1 4.0 Figure 3. Capacitance MMBD110T1 0.2 0.5 1.0 2.0 5.0 PLO, LOCAL OSCILLATOR POWER (mW) Figure 4. Noise Figure LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz NOTES ON TESTING AND SPECIFICATIONS 2. CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 3. Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Figure 5. Noise Figure Test Circuit http://onsemi.com 2 10 MMDL101T1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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