ONSEMI BUD43B

Order this document
by BUD43B/D
SEMICONDUCTOR TECHNICAL DATA
POWER TRANSISTORS
2 AMPERES
700 VOLTS
25 WATTS
The BUD43B has an application specific state–of–the–art die designed for use in
220 V line operated Switchmode Power supplies and electronic ballast (“light
ballast”). The main advantages brought by this new transistor are:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast and Tightened Switching Distributions
— No Coil Required in Base Circuit for Fast Turn–off
—
(no current tail)
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CASE 369–07
MAXIMUM RATINGS
Collector–Emitter Sustaining Voltage
VCEO
350
Vdc
Collector–Base Breakdown Voltage
VCBO
650
Vdc
Collector–Emitter Breakdown Voltage
VCES
650
Vdc
Emitter–Base Voltage
VEBO
9
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
2
4
Adc
Base Current — Continuous
Base Current — Peak (1)
IB
IBM
1
2
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
PD
25
0.2
Watt
W/_C
TJ, Tstg
– 65 to 150
_C
RθJC
RθJA
5
71.4
TL
260
Operating and Storage Temperature
CASE 369A–13
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
6.7
0.265
6.7
Unit
Thermal Resistance
— Junction to Case
— Junction to Ambient
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from case for 5 seconds
_C
30
THERMAL CHARACTERISTICS
1.6
0.063
0.265″
Value
1.8
Symbol
0.118 .070″
Rating
1.6
0.063
2.3
2.3
0.090 0.090
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
BUD43B
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
VCEO(sus)
350
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
Collector Cutoff Current
(VCE = Rated VCES, VBE = 0)
@ TC = 25°C
@ TC = 125°C
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
Vdc
ICEO
100
µAdc
ICES
10
200
µAdc
IEBO
100
µAdc
VBE(sat)
125
Vdc
VCE(sat)
1
Vdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 2 Adc, IB = 0.5 Adc)
Collector–Emitter Saturation Voltage
(IC = 2 Adc, IB = 0.5 Adc)
@ TC = 25°C
DC Current Gain
(IC = 1 Adc, VCE = 2 Vdc)
(IC = 2 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 25°C
hFE
8
6
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
40
pF
Input Capacitance
(VEB = 8 V)
Cib
400
pF
SWITCHING CHARACTERISTICS (Resistive Load) (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–on Time
(IC = 1.2 Adc, IB1 = 0.4 Adc,
IB2 = 0.1 Adc, VCC = 300 V)
@ TC = 25°C
toff
Fall Time
(IC = 2.5 Adc, IB1 = 0.5 Adc,
IB2 = 0.5 Adc, VCC = 150 V)
@ TC = 25°C
tf
2
4.7
5.8
µs
800
ns
Motorola Bipolar Power Transistor Device Data
BUD43B
PACKAGE DIMENSIONS
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
A
1
2
3
S
–T–
K
SEATING
PLANE
J
F
H
D
G
STYLE 1:
PIN 1.
2.
3.
4.
3 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.090 BSC
0.034
0.040
0.018
0.023
0.350
0.380
0.175
0.215
0.050
0.090
0.030
0.050
T
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.46
1.27
2.28
0.77
1.27
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369–07
ISSUE K
–T–
C
B
V
E
R
4
Z
A
S
1
2
3
U
K
F
J
L
H
D
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
2 PL
0.13 (0.005)
M
T
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
–––
0.030
0.050
0.138
–––
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
–––
0.77
1.27
3.51
–––
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369A–13
ISSUE W
Motorola Bipolar Power Transistor Device Data
3
BUD43B
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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4
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Motorola Bipolar Power Transistor Device Data
*BUD43B/D*
BUD43B/D