ONSEMI NTJD4401NT1

NTJD4401N
Small Signal MOSFET
20 V, Dual N−Channel, SC−88
ESD Protection
Features
•
•
•
•
•
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Small Footprint (2 x 2 mm)
Low Gate Charge N−Channel Device
ESD Protected Gate
Same Package as SC−70 (6 Leads)
Pb−Free Packages are Available
V(BR)DSS
RDS(on) Typ
0.22 W @ 4.5 V
0.32 W @ 2.5 V
8V
0.775 A
0.51 W @ 1.8 V
Applications
•
•
•
•
ID Max
Load Power switching
Li−Ion Battery Supplied Devices
Cell Phones, Media Players, Digital Cameras, PDAs
DC−DC Conversion
SC−88 (SOT−363)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±12
V
ID
0.63
A
Parameter
Continuous Drain
Current
(Based on RqJA)
Steady
State
Power Dissipation
(Based on RqJA)
Steady
State
TA = 25°C
Continuous Drain
Current
(Based on RqJL)
Steady
State
TA = 25°C
Power Dissipation
(Based on RqJL)
Steady
State
TA = 25°C
1
6
D1
G1
2
5
G2
D2
3
4
S2
Top View
TA = 85°C
0.46
PD
TA = 85°C
0.14
ID
MARKING DIAGRAM &
PIN ASSIGNMENT
A
0.91
D1 G2 S2
0.65
TA = 25°C
W
0.55
PD
TA = 85°C
0.29
IDM
±1.2
A
TJ, TSTG
−55 to
150
°C
IS
0.63
A
TL
260
°C
t ≤10 ms
Operating Junction and Storage Temperature
W
0.27
TA = 85°C
Pulsed Drain Current
S1
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
1
SC−88/SOT−363
CASE 419B
STYLE 28
6
TD M G
G
1
S1 G1 D2
TD
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol
Typ
Max
Units
Junction−to−Ambient – Steady State
RqJA
400
460
°C/W
Junction−to−Lead (Drain) – Steady State
RqJL
194
226
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 3
1
Publication Order Number:
NTJD4401N/D
NTJD4401N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Symbol
Test Condition
Min
Typ
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
27
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
22
mV/ °C
Parameter
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 16 V
1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±12 V
10
mA
VGS(TH)
VGS = VDS, ID = 250 mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
0.6
0.92
1.5
V
mV/ °C
−2.1
VGS = 4.5 V, ID = 0.63 A
0.29
0.375
VGS = 2.5 V, ID = 0.40 A
0.36
0.445
VDS = 4.0 V, ID = 0.63 A
2.0
W
S
CHARGES AND CAPACITANCES
CISS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
COSS
VGS = 0 V, f = 1.0 MHz,
VDS = 20 V
33
46
13
22
CRSS
2.8
5.0
Total Gate Charge
QG(TOT)
1.3
3.0
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
0.4
td(ON)
0.083
VGS = 4.5 V, VDS = 10 V,
ID = 0.63 A
pF
nC
0.1
0.2
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDD = 10 V,
ID = 0.5 A, RG = 20 W
tf
ms
0.227
0.786
0.506
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
VGS = 0 V,
IS =0.23 A
TJ = 25°C
0.76
TJ = 125°C
0.63
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 0.63 A
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
0.410
1.1
V
ms
NTJD4401N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1.2
VGS = 4.5 V to 2.2 V
1.2
TJ = 25°C
VDS ≥ 10 V
VGS = 2 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
1.4
1.8 V
1
0.8
1.6 V
0.6
0.4
1.4 V
0.2
1
0.8
0.6
0.4
TJ = 125°C
0.2
25°C
1.2 V
0.7
TJ = −55°C
0
2
6
4
8
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.4
1.2
2
0.8
1.6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0
VGS = 4.5 V
0.6
0.5
TJ = 125°C
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.4
1
0.8
0.6
ID, DRAIN CURRENT (AMPS)
0.2
1.2
1.4
0.7
TJ = 125°C
0.5
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.2
0.6
0.4
1
0.8
ID, DRAIN CURRENT (AMPS)
1.4
80
ID = 0.63 A
VGS = 4.5 V
and 2.5 V
TJ = 25°C
C, CAPACITANCE (pF)
VGS = 0 V
1.6
1.4
1.2
1
60
40
Ciss
20
Coss
0.8
0.6
−50
1.2
Figure 4. On−Resistance vs. Drain Current and
Temperature
2
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = 2.5 V
0.6
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.8
2.4
Crss
0
−25
0
25
50
75
100
125
150
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
20
NTJD4401N
0.7
5
QG(TOT)
IS, SOURCE CURRENT (AMPS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
4
VGS
3
QGS
2
QGD
1
ID = 0.63 A
TJ = 25°C
0
0
0.2
0.4
0.6
0.8
1
Qg, TOTAL GATE CHARGE (nC)
1.2
VGS = 0 V
0.6
0.5
0.4
0.3
0.2
TJ = 150°C
0.1
TJ = 25°C
0
1.4
0
0.2
0.4
0.6
0.8
1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
NTJD4401NT1
NTJD4401NT1G
NTJD4401NT2
NTJD4401NT2G
NTJD4401NT4
NTJD4401NT4G
Package
Shipping†
SC−88
3000 / Tape & Reel
SC−88
(Pb−Free)
3000 / Tape & Reel
SC−88
3000 / Tape & Reel
SC−88
(Pb−Free)
3000 / Tape & Reel
SC−88
10,000 / Tape & Reel
SC−88
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
NTJD4401N
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.95
1.10
A1 0.00
0.05
0.10
A3
0.20 REF
b
0.10
0.21
0.30
C
0.10
0.14
0.25
D
1.80
2.00
2.20
E
1.15
1.25
1.35
e
0.65 BSC
L
0.10
0.20
0.30
HE
2.00
2.10
2.20
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
A3
6
5
4
HE
C
−E−
1
2
3
L
b 6 PL
0.2 (0.008)
M
E
M
A
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
SOLDERING FOOTPRINT*
A1
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Sales Representative
NTJD4401N/D