ONSEMI BC490

BC490
High Current Transistors
PNP Silicon
Features
• This is a Pb−Free Device*
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COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
−80
Vdc
Collector − Base Voltage
VCBO
−80
Vdc
Emitter − Base Voltage
VEBO
−4.0
Vdc
Collector Current − Continuous
IC
−1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
THERMAL CHARACTERISTICS
12
3
STRAIGHT LEAD
BULK PACK
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
BC
490
AYWW G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
Device
Package
Shipping
BC490G
TO−92
(Pb−Free)
5000 Units / Bulk
Publication Order Number:
BC490/D
BC490
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage (Note 1)
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−80
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−80
−
−
Vdc
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−4.0
−
−
Vdc
ICBO
−
−
−100
nAdc
40
60
15
−
−
−
−
400
−
−
−
−0.25
−0.5
−0.5
−
−
−
−0.9
−1.0
−1.2
−
fT
−
150
−
MHz
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cob
−
9.0
−
pF
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
−
110
−
pF
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = −60 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −2.0 Vdc)
(IC = −100 mAdc, VCE = −2.0 Vdc)
(IC = −1.0 Adc, VCE = −5.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
(IC = −1.0 Adc, IB = −100 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
(IC = −1.0 Adc, IB = −100 mAdc)
VBE(sat)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
TURN−ON TIME
100
+10 V
0
tr = 3.0 ns
RB
Vin
5.0 mF
+VBB
VCC
+40 V
−1.0 V
5.0 ms
TURN−OFF TIME
100
VCC
+40 V
100
RL
OUTPUT
RB
Vin
5.0 mF
*CS < 6.0 pF
5.0 ms
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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2
100
RL
OUTPUT
*CS < 6.0 pF
200
100
VCE = −2.0 V
TJ = 25°C
70
TJ = 25°C
Cibo
50
C, CAPACITANCE (pF)
f,
T CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
BC490
100
70
50
30
20
10
Cobo
30
7.0
20
−2.0 −3.0
−5.0 −7.0 −10
−20 −30 −50 −70 −100
IC, COLLECTOR CURRENT (mA)
5.0
−0.1
−200
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Current−Gain — Bandwidth Product
−50 −100
Figure 3. Capacitance
1.0 k
700
500
ts
300
t, TIME (ns)
200
100
70
50
td @ VBE(off) = −0.5 V
tf
VCC = −40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
30
20
tr
10
−5.0 −7.0 −10 −20 −30
−50 −70 −100
−200 −300
IC, COLLECTOR CURRENT (mA)
−500
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 4. Switching Time
1.0
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
P(pk)
t1
0.02
0.1
0.07
0.05
SINGLE PULSE
0.03
SINGLE PULSE
ZqJC(t) = r(t) • RqJC
ZqJA(t) = r(t) • RqJA
0.02
0.01
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−469)
TJ(pk) − TC = P(pk) ZqJC(t)
TJ(pk) − TA = P(pk) ZqJA(t)
0.01
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
500
1.0k
Figure 5. Thermal Response
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3
2.0k
5.0k
10k
20k
50k
100
BC490
−1.0 k
−700
1.0
100 ms
TJ = 25°C
0.8
−300
1.0 s
−200
1.0 ms
TC = 25°C
TA = 25°C
−100
−70
−50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−30
−20
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
−500
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
BC490
−2.0 −3.0 −5.0 −7.0 −10
−20 −30 −50 −70 −100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
−10
−1.0
VBE(on) @ VCE = 1.0 V
0
0.5
1.0
2.0
1.0
500
200
500
−0.8
RθVB, TEMPERATURE COEFFICIENT (mV/°C)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
200
Figure 7. “On” Voltages
Figure 6. Active Region, Safe Operating Area
TJ = 25°C
0.8
0.6
5.0
10
50
100
20
IC, COLLECTOR CURRENT (mA)
−1.2
50
mA
IC = 10 mA
100 mA
250 mA
500 mA
−1.6
0.4
−2.0
−2.4
0.2
0
0.05
RqVB for VBE
0.1
0.2
1.0 2.0
10
0.5
5.0
IC, COLLECTOR CURRENT (mA)
20
−2.8
0.5
50
1.0
2.0
10
100
5.0
20
50
IC, COLLECTOR CURRENT (mA)
Figure 9. Base−Emitter Temperature Coefficient
Figure 8. Collector Saturation Region
400
hFE , DC CURRENT GAIN
TJ = 125°C
VCE = −1.0 V
200
25°C
−55°C
100
80
60
40
−0.5
−0.7
−1.0
−2.0
−3.0
−5.0
−7.0
−10
−20
−30
IC, COLLECTOR CURRENT (mA)
Figure 10. DC Current Gain
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4
−50
−70
−100
−200
−300
−500
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
BC490
−1.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
−0.6
VBE(on) @ VCE = −1.0 V
−0.4
−0.2
VCE(sat) @ IC/IB = 10
0
−0.5 −1.0
−2.0
−5.0 −10 −20
−50 −100 −200
IC, COLLECTOR CURRENT (mA)
−500
TJ = 25°C
−0.8
−0.6
IC = −10 mA
−50
mA
0
−0.05 −0.1
−0.2
−0.5 −1.0 −2.0
−5.0
IB, BASE CURRENT (mA)
−1.6
RqVB for VBE
−2.4
−1.0
−2.0
−500 mA
−10
−20
Figure 12. Collector Saturation Region
−1.2
−2.8
−0.5
−250 mA
−0.2
−0.8
−2.0
−100 mA
−0.4
Figure 11. “On” Voltages
RθVB, TEMPERATURE COEFFICIENT (mV/°C)
V, VOLTAGE (VOLTS)
−0.8
−1.0
−5.0 −10 −20
−50 −100 −200
IC, COLLECTOR CURRENT (mA)
−500
Figure 13. Base−Emitter Temperature Coefficient
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5
−50
BC490
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BC490/D