NTMFS4108N Power MOSFET 30 V, 35 A, Single N-Channel, SO-8 Flat Lead Package http://onsemi.com Features •Thermally and Electrically Enhanced Packaging Compatible with Standard SO-8 Package Footprint •New Package Provides Capability of Inspection and Probe After Board Mounting •Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG •Optimized for Low Side Synchronous Applications •High Speed Switching Capability http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX 1.8 mW @ 10 V 30 V 35 A 2.7 mW @ 4.5 V Applications D •Notebook Computer Vcore Applications •Network Applications •DC-DC Converters G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS $20 V ID 22 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 16 t v10 s TA = 25°C 35 Steady State t v10 s Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State 2.4 W 6.25 ID TA = 85°C TA = 25°C TC = 25°C tp = 10 ms Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IPK = 30 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 13.5 July, 2007 - Rev. 5 S S S G 1 SO-8 FLAT LEAD CASE 488AA STYLE 1 D 4108N AYWWG G D D A 10 PD 0.91 W PD 100 W IDM 203 A TJ, Tstg -55 to 150 °C IS 6.0 A EAS 450 mJ TL 260 °C 1 4108N = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127″ sq. [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412″ sq.). © Semiconductor Components Industries, LLC, 2007 MARKING DIAGRAM D TA = 25°C TA = 25°C Continuous Drain Current (Note 2) Power Dissipation (Note 2) PD S Device Package Shipping† NTMFS4108NT1G SO-8 FL (Pb-Free) 1500 Tape / Reel NTMFS4108NT3G SO-8 FL (Pb-Free) 5000 Tape / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMFS4108N/D NTMFS4108N THERMAL RESISTANCE RATINGS Symbol Max Unit Junction-to-Case (Drain) Rating RqJC 1.25 °C/W Junction-to-Ambient - Steady State (Note 3) RqJA 53 Junction-to-Ambient - t v10 s (Note 3) RqJA 20 Junction-to-Ambient - Steady State (Note 4) RqJA 138 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage T emperature Coefficient V(BR)DSS/TJ Characteristic Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 21 VGS = 0 V, VDS = 24 V TJ = 25°C 1.0 TJ = 125°C IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mV/°C mA 25 100 nA 2.5 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance Forward Transconductance RDS(on) gFS 1.0 7.5 mV/°C VGS = 4.5 V, ID = 19 A 2.7 3.4 VGS = 10 V, ID = 21 A 1.8 2.2 VDS = 15 V, ID = 10 A 25 S 6000 pF mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 700 Total Gate Charge QG(TOT) 54 Threshold Gate Charge QG(TH) 11 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 23 RG 0.7 W td(ON) 45 ns tr 60 Gate Resistance VGS = 0 V, f = 1.0 MHz, VDS = 15 V VGS = 4.5 V, VDS = 24 V, ID = 21 A 1200 nC 16 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W tf 70 140 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD ta Discharge Time tb Reverse Recovery Charge TJ = 25°C 0.72 TJ = 125°C 0.65 tRR Charge Time 3. 4. 5. 6. VGS = 0 V, IS = 6.0 A 41 VGS = 0 V, dIS/dt = 100 A/ms, IS = 6.0 A QRR http://onsemi.com 2 V ns 20 21 45 Surface-mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127″ sq. [1 oz] including traces). Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412″ sq.). Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. Switching characteristics are independent of operating junction temperatures. 1.1 nC NTMFS4108N TYPICAL PERFORMANCE CURVES 40 VDS ≥ 10 V 3.4 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 40 TJ = 25°C 3.5 V VGS = 4 V to 10 V 30 3.3 V 20 3.2 V 3.1 V 10 3.0 V 30 20 TJ = 125°C 10 TJ = 25°C 2.9 V 0 2 4 6 10 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 2 3 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.007 ID = 10 A TJ = 25°C 0.006 0.005 0.004 0.003 0.002 0.001 0 2 4 6 8 10 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) TJ = -55°C 0 0.0035 TJ = 25°C 0.003 VGS = 4.5 V 0.0025 0.002 VGS = 10 V 0.0015 0.001 0.0005 5 10 1.7 25 30 100000 VGS = 0 V ID = 10 A VGS = 10 V 1.5 10000 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 20 Figure 4. On-Resistance vs. Drain Current and Gate Voltage Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 15 ID, DRAIN CURRENT (AMPS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1.6 5 TJ = 150°C 1000 100 TJ = 100°C 10 -25 0 25 50 75 100 125 150 3 6 9 12 15 18 21 24 27 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTMFS4108N TYPICAL PERFORMANCE CURVES VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 7000 TJ = 25°C Ciss 6000 5000 4000 3000 2000 Coss 1000 Crss 0 0 5 10 15 20 25 DRAIN-TO-SOURCE VOLTAGE (VOLTS) 30 5 30 QT 4 24 QGS VGS 18 VDS 2 12 1 6 ID = 21 A TJ = 25°C 0 0 10 20 30 40 50 QG, TOTAL GATE CHARGE (nC) 0 60 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 1000 7 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1.0 A VGS = 4.5 V tf 100 td(off) td(on) tr 1 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V TJ = 25°C 6 5 4 3 2 1 0 0.4 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.5 0.6 0.7 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 10 ms 100 100 ms VGS = 20 V SINGLE PULSE TC = 25°C RDS(on) LIMIT Thermal Limit Package Limit 10 1 0.1 0.8 Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) QGD 3 Figure 7. Capacitance Variation 10 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 8000 1 ms 10 ms dc 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTMFS4108N PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO8 FL) CASE 488AA-01 ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 6 2X 0.20 C 5 4X E1 q E 2 c 1 2 3 A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --4.22 6.15 BSC 5.50 5.80 6.10 3.45 --4.30 1.27 BSC 0.51 0.61 0.71 0.51 ----0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --12 _ 0.10 C SOLDERING FOOTPRINT* SIDE VIEW 8X DETAIL A b 0.10 C A B 0.05 c 3X 4X 1.270 0.750 4X STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN e/2 L 1 4 K 1.000 0.965 1.330 2X 0.905 2X 0.495 E2 L1 6 G M 4.530 3.200 0.475 5 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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