NTJS4160N Power MOSFET 30 V, 3.2 A, Single N-Channel, SC-88 Features •Offers an Low RDS(on) Solution in the SC-88 Package •Low Profile (< 1.1 mm) Allows it to fit Easily into Extremely Thin Environments such as Portable Electronics •Operates at Standard Logic Level Gate Drive •Low Gate Charge •This is a Pb-Free Device http://onsemi.com V(BR)DSS RDS(on) TYP ID Max 45 mW @ 10 V 30 V 3.2 A 65 mW @ 4.5 V Applications •DC-DC Converters (Buck and Boost Circuit) •Optimized for Battery Powered Portable Equipment such as, MARKING DIAGRAM 6 Cell Phones, PDAs, Media Players, etc. •Load Management •Battery Charging and OV IC Protection Circuits SC-88 (SOT 363) CASE 419B STYLE 28 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t≤1s Power Dissipation (Note 1) Steady State TA = 25 °C Symbol Value Unit VDSS 30 V VGS ±20 V ID 2.6 A TA = 85 °C 1.9 TA = 25 °C 3.2 PD Continuous Drain Current (Note 2) Power Dissipation (Note 2) ID TA = 85 °C 1.3 0.3 W IDM 10 A TJ, TSTG -55 to 150 °C Source Current (Body Diode) IS 1.3 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2008 March, 2008 - Rev. 1 D 1 6 D D 2 5 D G 3 4 S A 1.8 PD TA = 25 °C T7 = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) W 0.62 0.95 TA = 25 °C Steady State 1 SC-88 (SOT-363) TA = 25 °C t≤1s T7 MG G 1 1 Top View ORDERING INFORMATION Device Package Shipping† NTJS4160NT1G SC-88 (Pb-Free) 3000 Units/Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTJS4160N/D NTJS4160N THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient – Steady State (Note 3) RqJA 200 °C/W Junction-to-Ambient - t ≤ 1 s (Note 3) RqJA 132 Junction-to-Ambient – Steady State (Note 4) RqJA 420 3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS = 0 V, VDS = 24 V V 20 TJ = 25°C mV/°C 1.0 TJ = 125°C mA 10 VDS = 0 V, VGS = +20 V 100 VDS = 0 V, VGS = -20 V -200 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS = VDS, ID = 250 mA VGS(TH)/TJ RDS(on) Forward Transconductance gFS 0.8 2.4 -5.0 VGS = 10 V, ID = 2.6 A V mV/°C 45 60 VGS = 4.5 V, ID = 2.2 A 65 85 VGS = 5.0 V, ID = 3.0 A 4.2 S 230 pF mW CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance VGS = 0 V, f = 1.0 MHz, VDS = 10 V 62 CRSS 39 Total Gate Charge QG(TOT) 2.75 Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 15 V, ID = 2.6 A nC 0.37 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 0.87 1.1 td(ON) 8.7 15 7.2 13 SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time tr td(OFF) Fall Time VGS = 4.5 V, VDD = 15 V, ID = 1.0 A, RG = 6.0 W 10.9 19 1.9 4.0 TJ = 25°C 0.79 1.2 TJ = 125°C 0.67 tf ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 1.3 A Reverse Recovery Time tRR 10.3 Charge Time Ta 7.2 Discharge Time Tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.3 A QRR http://onsemi.com 2 ns 3.1 4.0 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. V nC NTJS4160N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 6V to 10 V ID, DRAIN CURRENT (AMPS) 9 8 5V 10 VGS = 3.8 V 4.0 V ID, DRAIN CURRENT (AMPS) 10 3.6 V 7 3.4 V 6 TJ = 25°C 5 3.2 V 4 3.0 V 3 2 2.8 V 1 2.6 V 2.4 V 0 0.5 0 1.5 1 2.5 2 3.5 3 VDS ≥ 4 V 9 8 7 6 5 25°C 4 3 TJ = 150°C 2 1 0 4 TJ = -55°C 1 1.5 2 2.5 3 3.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 1. On-Region Characteristics 0.4 TJ = 25°C 0.35 ID = 2.6 A 0.3 0.25 0.2 0.15 0.1 0.05 0 1.0 2.0 3.0 4.0 6.0 7.0 8.0 5.0 VGS, GATE VOLTAGE (V) 9.0 10 0.1 TJ = 25°C VGS = 4.5 V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ID, DRAIN CURRENT (AMPS) 9.0 10 Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.6 1000 1.5 ID = 2.6 A 1.4 4.5 < VGS < 10 V VGS = 0 V TJ = 150°C 1.3 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS = 10 V 0.05 Figure 3. On-Resistance vs. Gate Voltage 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 4 100 TJ = 125°C 10 1 -25 0 25 50 75 100 125 150 0 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTJS4160N VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 350 300 250 Ciss 200 150 100 Coss 50 Crss 0 0 10 5 15 20 25 DRAIN-TO-SOURCE VOLTAGE (VOLTS) 5 4 VDS QGS 10 2 5 1 ID = 2.6 A TJ = 25°C 0 0 30 1 0 3 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1.0 A VGS = 4.5 V t, TIME (ns) 2 QG, TOTAL GATE CHARGE (nC) 100 td(off) td(on) tr tf 1 1 15 VGS QGD 3 Figure 7. Capacitance Variation 10 20 QT VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 400 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 100 1.3 VGS = 0 V 1.2 1.1 TJ = 150°C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.4 0.5 0.6 RG, GATE RESISTANCE (OHMS) TJ = 125°C TJ = 25°C TJ = -40°C 0.7 0.8 0.9 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJS4160N PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. D e 6 5 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN 4 HE -E1 2 3 DIM A A1 A3 b C D E e L HE b 6 PL 0.2 (0.008) M E M A3 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 SOLDERING FOOTPRINT* C 0.50 0.0197 A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 L 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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