ONSEMI NTJS4160N

NTJS4160N
Power MOSFET
30 V, 3.2 A, Single N-Channel, SC-88
Features
•Offers an Low RDS(on) Solution in the SC-88 Package
•Low Profile (< 1.1 mm) Allows it to fit Easily into Extremely Thin
Environments such as Portable Electronics
•Operates at Standard Logic Level Gate Drive
•Low Gate Charge
•This is a Pb-Free Device
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V(BR)DSS
RDS(on) TYP
ID Max
45 mW @ 10 V
30 V
3.2 A
65 mW @ 4.5 V
Applications
•DC-DC Converters (Buck and Boost Circuit)
•Optimized for Battery Powered Portable Equipment such as,
MARKING DIAGRAM
6
Cell Phones, PDAs, Media Players, etc.
•Load Management
•Battery Charging and OV IC Protection Circuits
SC-88 (SOT 363)
CASE 419B
STYLE 28
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t≤1s
Power Dissipation
(Note 1)
Steady
State
TA = 25 °C
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
2.6
A
TA = 85 °C
1.9
TA = 25 °C
3.2
PD
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
ID
TA = 85 °C
1.3
0.3
W
IDM
10
A
TJ,
TSTG
-55 to
150
°C
Source Current (Body Diode)
IS
1.3
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 1
D
1
6
D
D
2
5
D
G
3
4
S
A
1.8
PD
TA = 25 °C
T7
= Device Code
M
= Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
W
0.62
0.95
TA = 25 °C
Steady
State
1
SC-88
(SOT-363)
TA = 25 °C
t≤1s
T7 MG
G
1
1
Top View
ORDERING INFORMATION
Device
Package
Shipping†
NTJS4160NT1G
SC-88
(Pb-Free)
3000 Units/Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTJS4160N/D
NTJS4160N
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction-to-Ambient – Steady State (Note 3)
RqJA
200
°C/W
Junction-to-Ambient - t ≤ 1 s (Note 3)
RqJA
132
Junction-to-Ambient – Steady State (Note 4)
RqJA
420
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, ref to 25°C
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
VGS = 0 V,
VDS = 24 V
V
20
TJ = 25°C
mV/°C
1.0
TJ = 125°C
mA
10
VDS = 0 V, VGS = +20 V
100
VDS = 0 V, VGS = -20 V
-200
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain-to-Source On Resistance
VGS(TH)
VGS = VDS, ID = 250 mA
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
0.8
2.4
-5.0
VGS = 10 V, ID = 2.6 A
V
mV/°C
45
60
VGS = 4.5 V, ID = 2.2 A
65
85
VGS = 5.0 V, ID = 3.0 A
4.2
S
230
pF
mW
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
62
CRSS
39
Total Gate Charge
QG(TOT)
2.75
Threshold Gate Charge
QG(TH)
VGS = 4.5 V, VDS = 15 V,
ID = 2.6 A
nC
0.37
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
0.87
1.1
td(ON)
8.7
15
7.2
13
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tr
td(OFF)
Fall Time
VGS = 4.5 V, VDD = 15 V,
ID = 1.0 A, RG = 6.0 W
10.9
19
1.9
4.0
TJ = 25°C
0.79
1.2
TJ = 125°C
0.67
tf
ns
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 1.3 A
Reverse Recovery Time
tRR
10.3
Charge Time
Ta
7.2
Discharge Time
Tb
Reverse Recovery Charge
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 1.3 A
QRR
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2
ns
3.1
4.0
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
V
nC
NTJS4160N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
6V
to
10 V
ID, DRAIN CURRENT (AMPS)
9
8
5V
10
VGS = 3.8 V
4.0 V
ID, DRAIN CURRENT (AMPS)
10
3.6 V
7
3.4 V
6
TJ = 25°C
5
3.2 V
4
3.0 V
3
2
2.8 V
1
2.6 V
2.4 V
0
0.5
0
1.5
1
2.5
2
3.5
3
VDS ≥ 4 V
9
8
7
6
5
25°C
4
3
TJ = 150°C
2
1
0
4
TJ = -55°C
1
1.5
2
2.5
3
3.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 1. On-Region Characteristics
0.4
TJ = 25°C
0.35
ID = 2.6 A
0.3
0.25
0.2
0.15
0.1
0.05
0
1.0 2.0
3.0
4.0
6.0 7.0 8.0
5.0
VGS, GATE VOLTAGE (V)
9.0
10
0.1
TJ = 25°C
VGS = 4.5 V
0
0
1.0
2.0
3.0 4.0 5.0 6.0 7.0 8.0
ID, DRAIN CURRENT (AMPS)
9.0
10
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
1.6
1000
1.5
ID = 2.6 A
1.4
4.5 < VGS < 10 V
VGS = 0 V
TJ = 150°C
1.3
IDSS, LEAKAGE (nA)
RDS(on), DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
VGS = 10 V
0.05
Figure 3. On-Resistance vs. Gate Voltage
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
4
100
TJ = 125°C
10
1
-25
0
25
50
75
100
125
150
0
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
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3
NTJS4160N
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
350
300
250
Ciss
200
150
100
Coss
50
Crss
0
0
10
5
15
20
25
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
5
4
VDS
QGS
10
2
5
1
ID = 2.6 A
TJ = 25°C
0
0
30
1
0
3
Figure 8. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
IS, SOURCE CURRENT (AMPS)
VDD = 15 V
ID = 1.0 A
VGS = 4.5 V
t, TIME (ns)
2
QG, TOTAL GATE CHARGE (nC)
100
td(off)
td(on)
tr
tf
1
1
15
VGS
QGD
3
Figure 7. Capacitance Variation
10
20
QT
VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
400
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
100
1.3
VGS = 0 V
1.2
1.1
TJ = 150°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.4
0.5
0.6
RG, GATE RESISTANCE (OHMS)
TJ = 125°C TJ = 25°C
TJ = -40°C
0.7
0.8
0.9
1.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTJS4160N
PACKAGE DIMENSIONS
SC-88 (SOT-363)
CASE 419B-02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B-01 OBSOLETE, NEW STANDARD 419B-02.
D
e
6
5
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
4
HE
-E1
2
3
DIM
A
A1
A3
b
C
D
E
e
L
HE
b 6 PL
0.2 (0.008)
M
E
M
A3
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
SOLDERING FOOTPRINT*
C
0.50
0.0197
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
L
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NTJS4160N/D