NL27WZU04 Dual Unbuffered Inverter The NL27WZU04 is a high performance dual unbuffered inverter operating from a 1.65 to 5.5 V supply. These devices are well suited for use as oscillators, pulse shapers, and in many other applications requiring a high−input impedance amplifier. For digital applications, the NL27WZ04 is recommended. http://onsemi.com Features • • Designed for 1.65 V to 5.5 V VCC Operation Unbuffered for Crystal Oscillator and Analog Applications LVCMOS Compatible Source/Sink $16 mA @ 4.5 V VCC Near Zero Static Supply Current Substantially Reduces System Power Requirements Chip Complexity: FET = 72; Equivalent Gate = 18 Pb−Free Packages are Available MARKING DIAGRAMS 6 SC−88 / SOT−363/SC−70 DF SUFFIX CASE 419B M • • • • • M6 M G G 1 6 TSOP−6/SOT−23/SC−59 DT SUFFIX CASE 318G M6 M G G 1 IN A1 1 6 OUT Y1 GND 2 5 VCC IN A2 3 4 M6 M G (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. OUT Y2 Figure 1. Pinout (Top View) PIN ASSIGNMENT 1 IN A1 1 IN A2 1 = Device Code = Date Code* = Pb−Free Package OUT Y1 OUT Y2 IN A1 2 GND 3 IN A2 4 OUT Y2 5 VCC 6 OUT Y1 Figure 2. Logic Symbol ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. FUNCTION TABLE A Input L H Y Output H L © Semiconductor Components Industries, LLC, 2007 February, 2007 − Rev. 5 1 Publication Order Number: NL27WZU04/D NL27WZU04 MAXIMUM RATINGS Symbol VCC Characteristics Value Unit *0.5 to )7.0 V *0.5 ≤ VI ≤ VCC V *0.5 to 7.0 V VI < GND *50 mA VO < GND VO > VCC *50 +50 mA DC Supply Voltage VI DC Input Voltage VO DC Output Voltage IIK DC Input Diode Current IOK DC Output Diode Current IO DC Output Sink Current ±50 mA ICC DC Supply Current per Supply Pin ±100 mA IGND DC Ground Current per Ground Pin ±100 mA TSTG Storage Temperature Range *65 to )150 °C PD Power Dissipation in Still Air SC−88, TSOP−6 200 mW qJA Thermal Resistance SC−88, TSOP−6 333 °C/W TL Lead Temperature, 1 mm from case for 10 s 260 °C TJ Junction Temperature under Bias VESD ILatchup ESD Withstand Voltage Latchup Performance Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) Above VCC and Below GND at 85°C (Note 4) )150 °C > 2000 > 200 N/A V ±500 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22−A114−A. 2. Tested to EIA/JESD22−A115−A. 3. Tested to JESD22−C101−A. 4. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage VI Input Voltage VO Output Voltage TA Operating Free−Air Temperature Dt/DV Input Transition Rise or Fall Rate Operating Data Retention Only (High or LOW State) VCC = 2.5 V ± 0.2 V VCC = 3.0 V ± 0.3 V VCC = 5.0 V ± 0.5 V http://onsemi.com 2 Min Max Unit 1.65 1.5 5.5 5.5 V 0 5.5 V 0 VCC V *40 )85 °C 0 0 0 20 10 5 ns/V NL27WZU04 DC ELECTRICAL CHARACTERISTICS Symbol VIH Parameter Condition High−Level Input Voltage Min 1.65 to 1.85 0.85 VCC 0.85 VCC 2.3 to 5.5 0.8 VCC 0.8 VCC Typ 1.65 to 1.85 VIL Low−Level Input Voltage VOH High−Level Output Voltage VIN = VIL IOH = −100 mA VIN = GND Max Min Max 0.15 VCC 0.2 VCC VCC−0.1 IOH = −3 mA 1.65 1.29 1.52 1.29 IOH = −4 mA 2.3 1.9 2.1 1.9 IOH = −6 mA 2.7 2.2 2.3 2.2 IOH = −8 mA 3.0 2.4 2.6 2.4 IOH = −12 mA 3.0 2.3 2.5 2.3 3.8 4.2 IOH = −16 mA 4.5 IOL = 100 mA 1.65 to 5.5 VIN = VCC IOL = 3 mA 1.65 IOL = 4 mA 2.3 IOL = 6 mA IOL = 8 mA V 0.2 VCC 1.65 to 5.5 Low−Level Output Voltage VIN = VIH Unit V 0.15 VCC 2.3 to 5.5 VOL *40°C ≤ TA ≤ 85°C TA = 25°C VCC (V) VCC−0.1 V 3.8 0.1 0.1 0.08 0.24 0.24 0.12 0.3 0.3 2.7 0.20 0.4 0.4 3.0 0.24 0.4 0.4 IOL = 12 mA 3.0 0.26 0.55 0.55 0.31 V IOL = 16 mA 4.5 0.55 0.55 IIN Input Leakage Current VIN = VCC or GND 5.5 $0.1 $1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 1.65 to 5.5 1.0 10 mA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W *40°C ≤ TA ≤ 85°C TA = 25°C Symbol tPLH tPHL Parameter Propagation Delay Input A to Y (Figure 3 and 4) VCC (V) Min Typ Max Min Max Unit RL = 1 MW, CL = 50 pF 1.8$0.15 1.5 5.5 1.8 1.5 11.0 ns RL = 1 MW, CL = 15 pF 2.5$0.2 1.2 3.3 5.7 1.2 6.3 RL = 1 MW, CL = 15 pF 3.3$0.3 0.8 2.7 4.1 0.8 4.5 1.2 4.0 6.4 1.2 7.0 0.5 2.2 3.3 0.5 3.6 0.8 3.4 5.6 0.8 6.2 Condition RL = 500 W, CL = 50 pF RL = 1 MW, CL = 15 pF 5.0$0.5 RL = 500 W, CL = 50 pF CAPACITIVE CHARACTERISTICS Symbol Condition Typical Unit Input Capacitance VCC = 5.5 V, VI = 0 V or VCC 7 pF COUT Output Capacitance VCC = 5.5 V, VI = 0 V or VCC 8 pF CPD Power Dissipation Capacitance (Note 5) 10 MHz, VCC = 5.5 V, VI = 0 V or VCC 25 pF CIN Parameter 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 NL27WZU04 VCC A or B 50% GND tPLH Y tPHL 50% VCC PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns Figure 3. Switching Waveforms VCC PULSE GENERATOR DUT RT CL RL CL = 50 pF or equivalent (includes jig and probe capacitance) RL = R1 = 500 W or equivalent RT = ZOUT of pulse generator (typically 50 W) Figure 4. Test Circuit ORDERING INFORMATION Device Package NL27WZU04DFT2 SC−88 / SOT−363 / SC−70 NL27WZU04DFT2G SC−88 / SOT−363 / SC−70 (Pb−Free) NL27WZU04DTT1 TSOP−6 / SOT−23 / SC−59 NL27WZU04DTT1G TSOP−6 / SOT−23 / SC−59 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NL27WZU04 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 NL27WZU04 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e q c A 0.05 (0.002) L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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