ONSEMI MC74HCT138AD

MC74HCT138A
1−of−8 Decoder/
Demultiplexer with LSTTL
Compatible Inputs
High−Performance Silicon−Gate CMOS
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The MC74HCT138A is identical in pinout to the LS138. The
HCT138A may be used as a level converter for interfacing TTL or
NMOS outputs to High Speed CMOS inputs.
The HCT138A decodes a three−bit Address to one−of−eight
active−lot outputs. This device features three Chip Select inputs, two
active−low and one active−high to facilitate the demultiplexing,
cascading, and chip−selecting functions. The demultiplexing function
is accomplished by using the Address inputs to select the desired
device output; one of the Chip Selects is used as a data input while the
other Chip Selects are held in their active states.
MARKING
DIAGRAMS
16
PDIP−16
N SUFFIX
CASE 648
16
1
MC74HCT138AN
AWLYYWWG
1
16
Features
•
•
•
•
•
•
•
•
Output Drive Capability: 10 LSTTL Loads
TTL/NMOS Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0 mA
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 122 FETs or 30.5 Equivalent Gates
Pb−Free Packages are Available*
SOIC−16
D SUFFIX
CASE 751B
16
1
HCT138AG
AWLYWW
1
16
16
1
TSSOP−16
DT SUFFIX
CASE 948F
HCT
138
ALYW
1
A
WL, L
Y, YY
W, WW
G
=
=
=
=
=
Assembly Location
Wafer Lot
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 8
1
Publication Order Number:
MC74HCT138A/D
MC74HCT138A
LOGIC DIAGRAM
A0
ADDRESS
INPUTS
A1
A2
1
15
2
14
3
13
12
11
10
9
7
CHIP−
SELECT
INPUTS
CS1
CS2
CS3
Y0
Y1
PIN ASSIGNMENT
Y2
A0
1
16
VCC
Y3
A1
2
15
Y0
A2
3
14
Y1
CS2
4
13
Y2
CS3
5
12
Y3
CS1
6
11
Y4
Y7
7
10
Y5
GND
8
9
Y6
ACTIVE−LOW
OUTPUTS
Y4
Y5
Y6
Y7
6
4
PIN 16 = VCC
PIN 8 = GND
5
FUNCTION TABLE
Inputs
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Design Criteria
Value
Units
Internal Gate Count*
30.5
ea.
Internal Gate Propagation Delay
1.5
ns
Internal Gate Power Dissipation
5.0
mW
.0075
pJ
Speed Power Product
Outputs
CS1CS2 CS3 A2 A1 A0 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7
*Equivalent to a two−input NAND gate.
X
X
L
X
H
X
H
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
L
H
L
H
L
H
H
H
H
L
H
H
H
H
L
H
H
H
H
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
H
H
H
H
L
L
H
H
L
H
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
H
H
H
H
L
H
H
H
H
L
H
H
H
H
L
H = high level (steady state)
L = low level (steady state)
X = don’t care
ORDERING INFORMATION
Package
Shipping †
MC74HCT138AN
PDIP−16
500 Units / Box
MC74HCT138ANG
PDIP−16
(Pb−Free)
500 Units / Box
MC74HCT138AD
SOIC−16
48 Units / Rail
MC74HCT138ADG
SOIC−16
(Pb−Free)
48 Units / Rail
MC74HCT138ADR2
SOIC−16
2500 Units / Tape & Reel
MC74HCT138ADR2G
SOIC−16
(Pb−Free)
2500 Units / Tape & Reel
MC74HCT138ADTR2
TSSOP−16*
2500 Units / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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2
MC74HCT138A
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MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
– 0.5 to + 7.0
V
V
VCC
DC Supply Voltage (Referenced to GND)
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, TSSOP or SOIC Package)
Plastic DIP†
SOIC Package†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
_C
260
Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
Min
Max
Unit
4.5
5.5
V
0
VCC
V
– 55
+ 125
_C
0
500
ns
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time (Figure 1)
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
VCC
V
– 55 to
25_C
v 85_C
v 125_C
Unit
VIH
Minimum High−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
VIL
Maximum Low−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
VOH
Minimum High−Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 mA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
Vin = VIH or VIL
|Iout| v 4.0 mA
4.5
3.98
3.84
3.7
Vin = VIH or VIL
|Iout| v 20 mA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
Vin = VIH or VIL
|Iout| v 4.0 mA
4.5
0.26
0.33
0.4
Symbol
VOL
Parameter
Maximum Low−Level Output
Voltage
Test Conditions
V
Iin
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
mA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 mA
5.5
4.0
40
160
mA
Vin = 2.4 V, Any One Input
≥ − 55_C
25_C to 125_C
Vin = VCC or GND, Other Inputs
2.9
2.4
lout = 0 mA
5.5
mA
DICC
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
Additional Quiescent Supply
Current
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3
MC74HCT138A
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AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
Parameter
– 55 to
25_C
v 85_C
v 125_C
Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 4)
30
38
45
ns
tPLH,
tPHL
Maximum Propagation Delay, CS1 to Output Y
(Figures 2 and 4)
27
34
41
ns
tPLH,
tPHL
Maximum Output Transition Time, CS2 or CS3 to Output Y
(Figures 3 and 4)
30
38
45
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 2 and 4)
15
19
22
ns
tr, tf
Maximum Input Rise and Fall Time
500
500
500
ns
Cin
Maximum Input Capacitance
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
51
Power Dissipation Capacitance (Per Enabled Output)*
pF
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
EXPANDED LOGIC DIAGRAM
15
14
A0
A1
A2
13
1
12
2
11
3
10
CS3
CS2
Y1
Y2
Y3
Y4
Y5
5
4
9
7
CS1
Y0
6
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4
Y6
Y7
MC74HCT138A
SWITCHING WAVEFORMS
VALID
tr
VALID
3V
INPUT A
GND
tPLH
OUTPUT Y
tPHL
tPHL
90%
1.3 V
10%
tTHL
tTLH
Figure 1.
Figure 2.
tr
tf
3V
2.7 V
1.3 V
0.3 V
INPUT
CS2, CS3
GND
tPHL
tPLH
90%
1.3 V
10%
OUTPUT Y
tTHL
tTLH
Figure 3.
TEST CIRCUIT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
C L*
*Includes all probe and jig capacitance
Figure 4.
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5
GND
tPLH
OUTPUT Y
1.3 V
3V
2.7 V
1.3 V
0.3 V
INPUT CS1
1.3 V
tf
MC74HCT138A
PACKAGE DIMENSIONS
PDIP−16
N SUFFIX
CASE 648−08
ISSUE T
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS
WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE
MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
−A−
16
9
1
8
B
F
C
L
DIM
A
B
C
D
F
G
H
J
K
L
M
S
S
−T−
SEATING
PLANE
K
H
D
M
J
G
16 PL
0.25 (0.010)
T A
M
M
INCHES
MIN
MAX
0.740 0.770
0.250 0.270
0.145 0.175
0.015 0.021
0.040
0.70
0.100 BSC
0.050 BSC
0.008 0.015
0.110 0.130
0.295 0.305
0_
10 _
0.020 0.040
MILLIMETERS
MIN
MAX
18.80 19.55
6.35
6.85
3.69
4.44
0.39
0.53
1.02
1.77
2.54 BSC
1.27 BSC
0.21
0.38
2.80
3.30
7.50
7.74
0_
10 _
0.51
1.01
SOIC−16
D SUFFIX
CASE 751B−05
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
−A−
16
9
−B−
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 _
C
−T−
SEATING
PLANE
J
M
D
16 PL
0.25 (0.010)
M
T B
S
A
S
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6
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
MC74HCT138A
PACKAGE DIMENSIONS
TSSOP−16
DT SUFFIX
CASE 948F−01
ISSUE A
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
K
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
8
1
N
0.15 (0.006) T U
S
0.25 (0.010)
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
M
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
H
D
DETAIL E
G
http://onsemi.com
7
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
MC74HCT138A
ON Semiconductor and
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