[ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel, Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdf- RFL1N08, RFL1N10 Semiconductor 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs September 1998 Features Description • 1A, 80V and 100V These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 1.200Ω Ordering Information PART NUMBER PACKAGE BRAND RFL1N08 TO-205AF RFL1N08 RFL1N10 TO-205AF RFL1N10 Formerly developmental type TA09282. NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-204AA DRAIN (CASE) SOURCE GATE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 1385.2 RFL1N08, RFL1N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . .TL RFL1N08 80 80 1 5 ±20 8.33 0.0667 -55 to 150 RFL1N10 100 100 1 5 ±20 8.33 0.0667 -55 to 150 UNITS V V A A V W W/oC oC 260 260 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP RFL1N08 80 - - V RFL1N10 100 - - V VDS = VGS, ID = 250µA, (Figure 8) 2 - 4 V VGS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 25 µA VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 1 - - A VGS = ±20V - - ±100 nA 1.200 Ω Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current SYMBOL BVDSS VGS(TH) IDSS On-State Drain Current (Note 2) ID(ON) Gate to Source Leakage Current IGSS Drain to Source On Resistance Turn-On Delay Time rDS(ON) td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time TEST CONDITIONS MAX UNITS ID = 250µA, VGS = 0V ID = 5.6A, VGS = 10V, (Figures 6, 7) VDD = 50V, VGS = 10V, ID ≈ 1A, RG = 50Ω, RL = 50Ω (Figures 10, 11, 12) MOSFET Switching Times are Essentially Independent of Operating Temperature tf - 17 25 ns - 30 45 ns - 30 45 ns - 30 50 ns - - 200 pF Input Capacitance CISS Output Capacitance COSS - - 80 pF Reverse Transfer Capacitance CRSS - - 25 pF Thermal Resistance Junction to Case RθJC - - MIN TYP MAX UNITS TJ = 25oC, ISD = 1A, VGS = 0V - - 1.4 V TJ = 25oC, ISD = 1A, dISD/dt = 100A/µs - 100 - ns VDS = 25V, VGS = 0V, f = 1MHz (Figure 9) oC/W Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 5-2 RFL1N08, RFL1N10 1.2 1.2 1.0 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves Unless Otherwise Specified 0.8 0.6 0.4 0.8 0.6 0.4 0.2 0.2 0 0 25 50 75 100 125 0 25 150 50 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 10 TC =25oC TJ = MAX RATED PULSE DURATION = 80µs ID, DRAIN CURRENT (A) Id, DRAIN CURRENT, AMPS 1 RFL1N10 RFL1N08 0.1 1 VGS = 10V VGS = 20V VGS = 8V 2 VGS = 4V 1000 0 9 10 C rDS(ON), DRAIN TO SOURSE ON RESISTANCE C = 25 o T T C = -4 0o C 25 o C =1 VGS = 10V PULSE DURATION = 80µs 1.4 TC = 25oC 1.2 CASE TEMPERATURE (TC) = 125oC 1 0.8 TC = 25oC 0.6 TC = -40oC 0.4 0.2 0.5 TC = 125oC 0 2 3 4 5 6 7 8 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. SATURATION CHARACTERISTICS 2.5 TC IDS(0N), DRAIN TO SOURCE CURRENT (A) 3.0 1 1 1.6 PULSE DURATION = 80µs VDS = 10V TC = -40oC VGS = 6V 1A 4.0 1.5 VGS = 7V VGS = 5V 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 VGS = 9V 2.5 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 3.5 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE OPERATION IN THIS AREA LIMITED BY RDS(ON) 0.01 75 100 125 TC, CASE TEMPERATURE (oC) 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 0 10 0 0.5 1 1.5 2.0 ID, DRAIN CURRENT (A) FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 2.5 RFL1N08, RFL1N10 Typical Performance Curves Unless Otherwise Specified 1.4 ID = 1A, VGS = 10V NORMALIZED GATE THRESHOLD VOLTAGE 1.5 1.0 0.5 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 1.2 1.0 0.8 0.6 -50 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 100 240 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 200 C, CAPACITANCE (pF) VGS = VDS, ID = 250µA 160 120 CISS 80 COSS 40 CRSS 0 0 10 20 30 40 50 60 10 VDD = BVDSS 75 GATE SOURCE VOLTAGE 8 VDD = BVDSS 50 RL = 50Ω IG (REF) = 0.095 mA VGS = 10V 25 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 6 4 2 DRAIN SOURCE VOLTAGE 0 70 VGS, GATE TO SOURCE VOLTAGE (v) ON RESISTANCE NORMALIZED DRAIN TO SOURCE 2.0 (Continued) 0 I (REF) 20 G IG (ACT) VDS, DRAIN TO SOURCE (V) t, TIME (µs) I (REF) 20 G IG (ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4