FJC2098 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC1386 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 2 0 9 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) PC Power Dissipation(TC=25°C) TJ TSTG 5 A 0.5 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 50µA, IE = 0 50 V BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 20 V BVEBO Emitter-Base Breakdown Voltage IE = 50µA, IC = 0 6 ICEO Collector Cut-off Current VCE = 40V, VB = 0 IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE DC Current Gain VCE = 2V, IC = 0.5A VCE(sat) Collector-Emitter Saturation Voltage IC = 4A, IB = 0.1A VBE(sat) Base-Emitter Saturation Voltage IC = 4A, IB = 0.1A COB Collector Output Capacitance VCB = 20V, IE = 0, f = 1MHz ©2005 Fairchild Semiconductor Corporation FJC2098 Rev. B2 1 V 120 0.5 µA 0.5 µA 390 1.0 1.2 23 V V pF www.fairchildsemi.com FJC2098 NPN Epitaxial Silicon Transistor July 2005 Classification Q R hFE 120 ~ 270 180 ~ 390 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 2098 FJC2098 SOT-89 13” -- 4,000 FJC2098 Rev. B2 2 www.fairchildsemi.com FJC2098 NPN Epitaxial Silicon Transistor hFE Classification Figure 1. Static Characteristic Figure 2. DC Current Gain 1000 14 IB=200mA VCE=2V hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 12 10 8 6 IB=20mA 4 o Ta=125 C o Ta=25 C o Ta=-40 C 100 2 0 0 2 4 6 8 10 0.01 10 0.1 1 10 Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 10 VBE(sat)[V], SATURATION VOLTAGE VCE(sat)[V], SATURATION VOLTAGE IC=40IB 1 o Ta=125 C 0.1 o Ta=25 C o 0.01 Ta=-40 C 1E-3 0.01 0.1 1 IC=40IB 1 o Ta=-40 C o Ta=25 C o Ta=125 C 0.1 0.01 10 Figure 5. Base-Emitter On Voltage 1 10 Figure 6. Common-Base Open-Circuit Output Capacitance 1.8 100 VCE=2V IE=0,f=1MHZ Cob[pF], OUTPUT CAPACITANCE IC[A], COLLECTOR CURRENT 1.6 1.4 1.2 o Ta=125 C 1.0 o 25 C o -40 C 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1.0 1.2 80 60 40 20 0 1.4 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE VBE[V], BASE-EMITTER VOLTAGE FJC2098 Rev. B2 0.1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 0.0 0.0 100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 3 www.fairchildsemi.com FJC2098 NPN Epitaxial Silicon Transistor Typical Performance Characteristics FJC2098 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters FJC2098 Rev. B2 4 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 FJC2098 Rev. B2 www.fairchildsemi.com FJC2098 NPN Epitaxial Silicon Transistor TRADEMARKS