MJD112 tm NPN Silicon Darlington Transistor Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) Equivalent Circuit C B D-PAK 1 1.Base 2.Collector R1 3.Emitter R2 R1 ≅ 10kΩ R2 ≅ 0.6kΩ Absolute Maximum Ratings* Symbol E Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 2 A ICP Collector Current (Pulse) 4 A IB Base Current 50 mA PC Collector Dissipation (TC=25°C) 20 W Collector Dissipation (Ta=25°C) 1.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units µA VCEO(sus) Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 ICEO Collector Cut-off Current VCE = 50V, IB = 0 20 ICBO Collector Cut-off Current VCB = 100V, IB = 0 20 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA hFE * DC Current Gain VCE = 3V, IC = 0.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A VCE(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 8mA IC = 4A, IB = 40mA VBE(sat) * Base-Emitter Saturation Voltage VBE(on) * Base-Emitter On Voltage fT Current Gain Bandwidth Product VCE = 10V, IC = 0.75A Cob Output Capacitance VCB = 10V, IE = 0 f = 0.1MHz 100 500 1000 200 V 12K 2 3 V V IC = 4A, IB = 40mA 4 V VCE = 3A, IC = 2A 2.8 V 25 MHz 100 pF * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation MJD112 Rev. B 1 www.fairchildsemi.com MJD112 NPN Silicon Darlington Transistor November 2006 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10000 hFE, DC CURRENT GAIN VCE = 3V 1000 100 10 0.01 0.1 1 10 10 IC = 250 IB VBE(sat) 1 VCE(sat) 0.1 0.01 0.01 IC[A], COLLECTOR CURRENT 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 tR,tD(µs), TURN ON TIME Cob[pF], CAPACITANCE VCC=30V IC=250IB 100 10 1 tR tD 1 0.1 1 10 0.1 0.01 100 Figure 3. Collector Output Capacitance tSTG 1 tF s 0µ IC[A], COLLECTOR CURRENT 10 tSTG,tF[µS], TURN OFF TIME 10 10 VCC=30V IC=250IB 1 DC 1 5m ms s 0.1 0.01 0.1 1 1 10 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time Figure 6. Safe Operating Area 2 MJD112 Rev. B 1 Figure 4. Turn On Time 10 0.1 0.01 0.1 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE www.fairchildsemi.com MJD112 NPN Silicon Darlington Transistor Typical Characteristics MJD112 NPN Silicon Darlington Transistor Typical Characteristics (Continued) PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 1. Power Derating 3 MJD112 Rev. B www.fairchildsemi.com MJD112 NPN Silicon Darlington Transistor Mechanical Dimensions D-PAK MIN0.55 0.91 ±0.10 0.50 ±0.10 0.89 ±0.10 6.10 ±0.20 2.30 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.90) 2.30 ±0.20 (0.70) 2.30TYP [2.30±0.20] (0.50) 2.70 ±0.20 0.60 ±0.20 0.80 ±0.20 MAX0.96 (4.34) 9.50 ±0.30 5.34 ±0.30 (0.50) 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters 4 MJD112 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21 5 MJD112 Rev. 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