KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature Range -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 75 V BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6 ICBO Collector Cut-off Current VCB = 60V, IE = 0 hFE DC Current Gain * VCE = 10V, IC = 0.1mA VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA V 0.01 35 50 75 100 40 µA 300 VCE (sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.3 1.0 V V VBE (sat) Base-Emitter Saturation Voltage * IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.6 1.2 2.0 V V fT Current Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz 300 Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8 pF NF Noise Figure IC = 100µA, VCE = 10V RS = 1KΩ, f = 1MHz 4 dB tON Turn On Time VCC = 30V, IC = 150mA VBE = 0.5V, IB1 = 15mA 35 ns tOFF Turn Off Time VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 285 ns MHz * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation KST2222A Rev. B 1 www.fairchildsemi.com KST2222A NPN Epitaxial Silicon Transistor May 2006 KST2222A NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage 0.4 V ce=5V 250 B=10 Vce(sat), Saturation Current,[V] hfe, Current Gain 125C 200 75C 25C 150 100 50 0.3 0.2 125C 0.1 75C 25C 1 10 1 100 10 C o lle c to r C u rre n t, [m A ] Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current 1.0 Leakage current of Collector - Base(nA) 100 B=10 Vbe(sat), Saturation Current,[V] 0.9 0.8 0.7 0.6 25C 0.5 75C 0.4 125C 0.3 0.1 100 Collector Current, [mA] 1 10 V C B = 60V 10 1 25 100 50 75 100 125 150 Tem perature, ['C ] Collector Current, [m A] Figure 5. Output Capacitance Figure 6. Power Dissipation vs Ambient Temperature 0.4 IE = 0 f = 1M Hz PD - Power Dissipation (W) Cob [pF], Capacitance 10 1 0.3 0.2 0.1 0.0 0.1 1 10 0 100 50 75 100 125 150 Temperature, [ C] 2 KST2222A Rev. B 25 O V C B [V ], C o lle cto r-B a se V o lta g e www.fairchildsemi.com KST2222A NPN Epitaxial Silicon Transistor Mechanical Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters 3 KST2222A Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST® ACEx™ FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ Build it Now™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ I2C™ EcoSPARK™ 2 i-Lo™ E CMOS™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 4 KST2222A Rev. B www.fairchildsemi.com KST2222A NPN Epitaxial Silicon Transistor TRADEMARKS