NTMFS4701N Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package Features •Thermally and Electrically Enhanced Packaging Compatible with Standard SOIC-8 http://onsemi.com •New Package Provides Capability of Inspection and Probe After Board Mounting •Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG •Optimized for High Side Control Applications •High Speed Switching Capability •These are Pb-Free Devices V(BR)DSS RDS(on) Typ ID Max 6.0 mW @ 10 V 30 V 20 A 8.0 mW @ 4.5 V Applications •Notebook Computer VCORE Applications •Network Applications •DC-DC Converters N-Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1 ) Steady State TA = 25°C t v10 s TA = 25°C Power Dissipation (Note 1) Pulsed Drain Current VDSS 30 V VGS $20 V ID 12.3 A ID PD 6.0 TA = 25°C ID 7.7 TA = 70°C tp = 10 ms Operating and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 V, VGS = 10 V, IPK = 7.5 A, L = 10 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) D July, 2007 - Rev. 3 S S S G 1 W A 6.2 PD 0.9 W IDM 60 A TJ, Tstg -55 to 150 °C IS 6.0 A EAS 280 mJ TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area 1.127 in sq. [1 oz} including traces). 2. Surface-mounted on FR4 board using minimum recommended pad size (Cu area 0.412 in sq.). © Semiconductor Components Industries, LLC, 2007 MARKING DIAGRAM & PIN ASSIGNMENT 20 TA = 25°C TA = 25°C S 9.8 2.3 t v10 s Power Dissipation (Note 2) Unit PD TA = 25°C Steady State Value TA = 70°C Steady State Continuous Drain Current (Note 2) G Symbol 1 SOIC-8 FLAT LEAD CASE 488AA STYLE 1 4701N A Y WW G D 4701N AYWWG G D D = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTMFS4701NT1G SOIC-8 FL 1500/T ape & Reel (Pb-Free) NTMFS4701NT3G SOIC-8 FL 5000/T ape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4701N/D NTMFS4701N THERMAL RESISTANCE RATINGS Symbol Value Unit Junction-to-Case - Steady State Rating RqJC 4.0 °C/W Junction-to-Ambient - Steady State (Note 2) RqJA 140 Junction-to-Ambient - t v10 s (Note 1) RqJA 21 Junction-to-Ambient - Steady State (Note 1) RqJA 55 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 7.2 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 50 IGSS VDS = 0 V, VGS = $20 V VGS(TH) VGS = VDS, ID = 250 mA mA $100 nA 3.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance Forward Transconductance RDS(on) gFS 1.0 5.0 mV/°C VGS = 4.5 V, ID = 17 A 8.0 11 VGS = 10 V, ID = 20 A 6.0 8.0 VDS = 15 V, ID = 20 A 70 S 1280 pF mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance VGS = 0 V, f = 1.0 MHz, VDS = 24 V 500 CRSS 120 Total Gate Charge QG(TOT) 11 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 6.0 RG 1.4 W 9.0 ns Gate Resistance 15 nC 1.1 VGS = 4.5 V, VDS = 15 V, ID = 20 A 2.0 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) VGS = 10 V, VDD = 15 V, ID = 1.0 A, RG = 6.0 W tf 4.0 29 19 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = 6.0 A TJ = 25°C 0.75 TJ = 125°C 0.55 tRR 34 Charge Time ta 16 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 100 A/ms, IS = 6.0 A QRR http://onsemi.com 2 V ns 18 27 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 1.0 nC NTMFS4701N TYPICAL PERFORMANCE CURVES 42 VGS = 10 V 6V 4V 3.4 V 36 30 VDS ≥ 10 V TJ = 25°C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 42 3V 24 18 2.6 V 12 6 36 30 24 18 12 TJ = 25°C 6 TJ = 125°C 2.2 V 0 1 2 3 5 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 1 2 3 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 0.01 TJ = 125°C 0.008 0.006 TJ = 25°C 0.004 TJ = -55°C VGS = 10 V 0.002 0 6 12 24 20 30 ID, DRAIN CURRENT (AMPS) 36 42 TJ = 25°C VGS = 4.5 V 0.008 VGS = 10 V 0.006 0.004 0.002 0 6 20 12 30 24 36 42 ID, DRAIN CURRENT (AMPS) Figure 4. On-Resistance vs. Drain Current and Gate Voltage 2 100000 VGS = 0 V ID = 20 A VGS = 10 V IDSS, LEAKAGE (nA) 1.5 TJ = 150°C 10000 1 0.5 0 -50 5 0.01 Figure 3. On-Resistance vs. Drain Current and Temperature RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = -55°C 0 TJ = 125°C 1000 100 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTMFS4701N 2500 C, CAPACITANCE (pF) VDS = 0 V VGS, GATE-TO-SOURCE VOLTAGE (V) TYPICAL PERFORMANCE CURVES TJ = 25°C VGS = 0 V 2000 Ciss 1500 Ciss 1000 Crss Coss 500 Crss 0 10 5 0 VGS 5 10 15 20 10 8 VGS 6 QT 4 QGS 2 ID = 20 A TJ = 25°C 0 0 25 2 VDS Figure 7. Capacitance Variation 100 IS, SOURCE CURRENT (AMPS) t, TIME (ns) td(off) tf td(on) tr 10 22 8 6 4 2 0 1 10 RG, GATE RESISTANCE (OHMS) 100 0 100 ms 1 ms 10 ms VGS = 20 V SINGLE PULSE TC = 25°C dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 10 100 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 10 ms 10 0.2 0.4 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1 Figure 10. Diode Forward Voltage vs. Current 100 ID, DRAIN CURRENT (AMPS) 20 VGS = 0 V TJ = 25°C Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.1 6 8 10 12 14 16 18 QG, TOTAL GATE CHARGE (nC) 10 VDD = 15 V ID = 1 A VGS = 4.5 V 1 4 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 QGD 280 ID = 7.5 A 240 200 160 120 80 40 0 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 125 100 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 NTMFS4701N PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO8 FL) CASE 488AA-01 ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 6 2X 0.20 C 5 4X E1 q E 2 c 1 2 3 A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --4.22 6.15 BSC 5.50 5.80 6.10 3.45 --4.30 1.27 BSC 0.51 0.61 0.71 0.51 ----0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --12 _ 0.10 C SOLDERING FOOTPRINT* SIDE VIEW 8X DETAIL A b 0.10 C A B 0.05 c 3X 4X 1.270 0.750 4X STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN e/2 L 1 4 K 1.000 0.965 1.330 2X 0.905 2X 0.495 E2 L1 6 G M 4.530 3.200 0.475 5 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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