ONSEMI NTHS4501NT1G

NTHS4501N
Power MOSFET
30 V, 6.7 A, Single N−Channel,
ChipFETt Package
Features
• Planar Technology Device Offers Low RDS(on) and Fast Switching Speed
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in a ChipFET Package
• Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6.
•
•
Ideal Device for Applications Where Board Space is at a Premium.
ChipFET Package Exhibits Excellent Thermal Capabilities Where
Heat Transfer is Required.
Pb−Free Package is Available
V(BR)DSS
RDS(on) Typ
30 mW @ 10 V
30 V
6.7 A
40 mW @ 4.5 V
Applications
D
• Buck and Boost Converters
• Optimized for Battery and Load Management Applications in
•
ID Max
Portable Equipment such as Notebook Computers, MP3 Players,
Cell Phones, Digital Cameras, Personal Digital Assistants and Other
Portable Applications
Charge Control in Battery Chargers
G
S
N−Channel MOSFET
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
4.9
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
TA = 25°C
TA = 85°C
3.5
t≤5s
TA = 25°C
6.7
Steady
State
TA = 25°C
TA = 85°C
0.7
t≤5s
TA = 25°C
2.5
tp = 10 ms
PD
D D D S
1
ChipFET
CASE 1206A
STYLE 1
W
1.3
IDM
20
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
1.1
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
MARKING DIAGRAM
AND PIN ASSIGNMENT
8
D2
M
G
D2 M
G
1
D D D G
= Specific Device Code
= Month Code
= Pb−Free Package
ORDERING INFORMATION
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
95
°C/W
Junction−to−Foot (Drain) Steady State (Note 1)
RqJF
20
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
50
Package
Shipping †
NTHS4501NT1
ChipFET
3000/Tape & Reel
NTHS4501NT1G
ChipFET
(Pb−Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 4
1
Publication Order Number:
NTHS4501N/D
NTHS4501N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Min
Typ
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
31
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
30
mV/°C
Parameter
Max
Units
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V, VDS = 24 V
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
100
nA
2.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On−Resistance
Forward Transconductance
RDS(on)
gFS
1.0
1.6
4.0
mV/°C
mW
VGS = 10 V, ID = 4.9 A
30
38
VGS = 4.5 V, ID = 3.9 A
40
50
VDS = 10 V, ID = 4.9 A
15
S
462
pF
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = 24 V
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
32
Total Gate Charge
QG(TOT)
9.1
Threshold Gate Charge
QG(TH)
0.7
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.8
td(on)
4.0
VGS = 10 V, VDS = 15 V,
ID = 4.9 A
137
nC
1.3
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDS = 15 V,
ID = 1.0 A, RG = 6.0 W
tf
ns
11
17
7.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = 1.1 A
TJ = 25°C
0.75
19.1
VGS = 0 V, IS = 1.1 A,
dIS/dt = 90 A/ms
QRR
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2
V
ns
11.9
7.3
13
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NTHS4501N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10 V
ID, DRAIN CURRENT (AMPS)
9
3.2 V
TJ = 25°C
3.0 V
8
2.8 V
7
6
5
2.6 V
4
3
2.4 V
2
2.2 V
1
1
2
3
4
5
6
7
8
9
6
2
TJ = 100°C
1.5
2.0
0.13
0.11
0.09
0.07
0.05
0.03
3
2
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
3.0
3.5
4.0
4.5
0.06
TJ = 25°C
0.05
VGS = 4.5 V
0.04
VGS = 10 V
0.03
0.02
2
4
6
8
10
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
10000
2
ID = 4.9 A
VGS = 10 V
IDSS, LEAKAGE (nA)
VGS = 0 V
1.6
1.4
1.2
1
TJ = 150°C
1000
100
0.8
0.6
−50
2.5
Figure 2. Transfer Characteristics
0.15
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
25°C
Figure 1. On−Region Characteristics
0.17
1.8
−55°C
4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID = 4.9 A
TJ = 25°C
1
8
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.19
0.01
VDS ≥ 10 V
10
0
1.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
10
TJ = 100°C
10
−25
0
25
50
75
100
125
150
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTHS4501N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
C, CAPACITANCE (pF)
800
600
CISS
400
COSS
200
CRSS
0
0
6
18
12
24
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
30
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
TJ = 25°C
VGS = 0 V
9
16
8
VDS
7
VGS
12
6
5
4
QGS
8
QGD
3
4
2
ID = 4.9 A
TJ = 25°C
1
0
0
2
4
6
8
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
0
10
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
5
IS, SOURCE CURRENT (AMPS)
VDD = 15 V
ID = 1.0 A
VGS = 10 V
t, TIME (ns)
20
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
100
td(off)
tr
10
tf
td(on)
1
1
10
VGS = 0 V
TJ = 25°C
4
3
2
1
0
0.3
100
RG, GATE RESISTANCE (OHMS)
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTHS4501N
PACKAGE DIMENSIONS
ChipFETt
CASE 1206A−03
ISSUE H
D
8
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
q
6
L
5
HE
5
6
7
8
4
3
2
1
E
1
2
3
e1
4
b
c
e
MILLIMETERS
NOM
MAX
1.05
1.10
0.30
0.35
0.15
0.20
3.05
3.10
1.65
1.70
0.65 BSC
0.55 BSC
0.28
0.35
0.42
1.80
1.90
2.00
5° NOM
DIM
A
b
c
D
E
e
e1
L
HE
q
A
0.05 (0.002)
MIN
1.00
0.25
0.10
2.95
1.55
INCHES
NOM
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.011
0.014
0.071
0.075
5° NOM
MIN
0.039
0.010
0.004
0.116
0.061
MAX
0.043
0.014
0.008
0.122
0.067
0.017
0.079
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. DRAIN
4. GATE
5. SOURCE
6. DRAIN
7. DRAIN
8. DRAIN
SOLDERING FOOTPRINTS*
1
2.032
0.08
1
2.032
0.08
1.727
0.068
2.362
0.093
0.635
0.025
PITCH
2.362
0.093
8X
8X
0.66
0.026
0.457
0.018
2X
2X
mm Ǔ
ǒinches
0.457
0.018
Basic
0.66
0.026
Style 1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
mm Ǔ
ǒinches
NTHS4501N
ChipFET is a trademark of Vishay Siliconix
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTHS4501N/D