NTMS4939N Power MOSFET 30 V, 12.5 A, N−Channel, SO−8 Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS Applications • • • • http://onsemi.com DC−DC Converters Points of Loads Power Load Switch Motor Controls RDS(ON) MAX 8.4 mW @ 10 V 30 V Symbol N−Channel Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 10.3 A Continuous Drain Current RqJA (Note 1) Steady State TA = 25°C Power Dissipation RqJA (Note 1) Steady State TA = 25°C PD 1.35 W Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C ID 8.0 A TA = 70°C PD W TA = 25°C Power Dissipation RqJA, t v 10 s(Note 1) Steady State TA = 25°C PD 2.0 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 100 A TJ, Tstg −55 to 150 °C IS 2.0 A EAS 60.5 mJ TA = 70°C 12.5 A 10 Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) MARKING DIAGRAM/ PIN ASSIGNMENT TL 1 SO−8 CASE 751 STYLE 12 Source Source Source Gate 1 8 Drain Drain Drain Drain Top View 4939N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION 260 °C THERMAL RESISTANCE MAXIMUM RATINGS Parameter S 4939N AYWWG G ID 0.8 Steady State Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 11 Apk, L = 1.0 mH, RG = 25 W) G 6.4 Continuous Drain Current RqJA, t v 10 s (Note 1) Operating Junction and Storage Temperature D 8.3 TA = 70°C TA = 25°C Power Dissipation RqJA (Note 2) 12.5 A 11 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter ID MAX Symbol Value Unit Junction−to−Ambient – Steady State (Note 1) RqJA 92.7 °C/W Junction−to−Ambient – t v 10 s (Note 1) RqJA 61.7 Junction−to−Foot (Drain) RqJF 23.5 Junction−to−Ambient – Steady State (Note 2) RqJA 155.6 Device NTMS4939NR2G Package Shipping† SO−8 (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surfacemounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2009 September, 2009 − Rev. 0 1 Publication Order Number: NTMS4939N/D NTMS4939N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 13.8 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA ±100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance 1.0 2.5 5.0 VGS = 10 V, ID = 7.5 A gFS V mV/°C 7.0 8.4 mW VGS = 4.5 V, ID = 6.5 A 9.0 11 VDS = 1.5 V, ID = 7.5 A 23.8 S 2000 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 16 Total Gate Charge QG(TOT) 12.4 Threshold Gate Charge QG(TH) 3.3 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 4.5 V, VDS = 15 V, ID = 7.5 A 620 nC 5.3 1.85 VGS = 10 V, VDS = 15 V, ID = 7.5 A 25 nC td(on) 10.6 ns tr 3.1 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(off) VGS = 10 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W tf 36.7 21.5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = 2.0 A TJ = 25°C 0.73 TJ = 125°C 0.57 tRR 36.3 Charge Time ta 17.8 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 100 A/ms, IS = 2.0 A 1.0 V ns 18.5 QRR 32 nC LS 0.66 nH PACKAGE PARASITIC VALUES Source Inductance Drain Inductance LD Gate Inductance LG Gate Resistance RG TA = 25°C 0.2 1.5 0.4 3. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 1.0 W NTMS4939N TYPICAL PERFORMANCE CURVES 10V/4.5 V 3.8 V 3.4 V 3V 20 16 45 TJ = 25°C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 24 2.8 V 12 2.6 V 8 2.4 V 4 2.2 V 0 1.0 2.0 4.0 3.0 5.0 25 20 15 TJ = 125°C 10 TJ = 25°C 5 0 4 Figure 2. Transfer Characteristics 0.015 0.010 4 3 5 6 7 8 9 TJ = 25°C 0.010 VGS = 4.5 V 0.008 VGS = 10 V 0.006 0.004 0.002 4.5 10 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 5 0.012 6.5 8.5 10.5 12.5 14.5 16.5 18.5 20.5 22.5 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage 10000 1.8 VGS = 0 V ID = 7.5 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3 2 Figure 1. On−Region Characteristics 0.020 1.6 1 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TJ = 25°C ID = 7.5 A 2 30 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.025 0.000 35 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 VDS ≥ 10 V 40 1.4 1.2 1.0 TJ = 150°C 1000 TJ = 125°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 100 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTMS4939N TYPICAL PERFORMANCE CURVES C, CAPACITANCE (pF) 2000 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2400 Ciss 1600 TJ = 25°C VGS = 0 V 1200 Coss 800 400 0 Crss 0 5 10 15 25 20 DRAIN−TO−SOURCE VOLTAGE (VOLTS) 30 10 QT 9 8 7 VGS 6 5 4 2 VGS = 10 V ID = 7.5 A TJ = 25°C 1 0 0 5 Figure 7. Capacitance Variation IS, SOURCE CURRENT (AMPS) td(off) 100 t, TIME (ns) 25 2 VDD = 15 V ID = 1 A VGS = 10 V tf td(on) tr 1 10 0.5 0 0.4 0.5 0.6 0.7 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 10 0.01 0.01 1 RG, GATE RESISTANCE (OHMS) 100 0.1 1.5 100 1000 1 VGS = 0 V TJ = 25°C 100 ms VGS = 20 V SINGLE PULSE TC = 25°C 1 ms 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 dc 1 10 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 10 ID, DRAIN CURRENT (AMPS) 10 20 15 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 1000 1 QGD QGS 3 70 60 ID = 11 A 50 40 30 20 10 0 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 NTMS4939N PACKAGE DIMENSIONS SOIC−8 CASE 751−07 ISSUE AJ −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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