MBR10L60CT, MBRF10L60CT SWITCHMODE™ Power Rectifier 60 V, 10 A http://onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 60 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 10 A Total (5 A Per Diode Leg) Guard−Ring for Stress Protection These are Pb−Free Devices 1 2, 4 3 Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: • • • • • MARKING DIAGRAMS 4 Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−220AB CASE 221A PLASTIC 1 2 3 MAXIMUM RATINGS TO−220 FULLPAK] CASE 221D STYLE 3 Please See the Table on the Following Page 1 2 AYWW B10L60G AKA AYWW B10L60G AKA 3 A Y WW B10L60 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 December, 2008 − Rev. 0 1 Publication Order Number: MBR10L60CT/D MBR10L60CT, MBRF10L60CT MAXIMUM RATINGS (Per Diode Leg) Symbol Value Unit VRRM VRWM VR 60 V IF(AV) 5 10 A IFSM 200 A Operating Junction Temperature (Note 1) TJ −55 to +150 °C Storage Temperature Tstg −65 to +175 °C > 400 > 8000 V Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 140°C (Per Leg) (Per Device) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance MBR10L60CT Junction−to−Case Junction−to−Ambient Junction−to−Case Junction−to−Ambient MBRF10L60CT Symbol Value RqJC RqJA RqJC RqJA 2.8 70 5.7 75 Typ Max 0.49 0.43 0.60 0.53 0.57 0.49 0.66 0.61 77 33 220 60 Unit °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 5 A, TC = 25°C) (IF = 5 A, TC = 125°C) (IF = 10 A, TC = 25°C) (IF = 10 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Package Type Shipping MBR10L60CTG Device Order Number TO−220AB (Pb−Free) 50 Units / Rail MBRF10L60CTG TO−220FP (Pb−Free) 50 Units / Rail http://onsemi.com 2 Unit V mA mA MBR10L60CT, MBRF10L60CT 100 10 1 IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 100 125°C 85°C 150°C TJ = 25°C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 125°C 10 150°C TJ = 25°C 0.1 0 Figure 1. Typical Forward Voltage 1.0E+00 150°C 125°C 1.0E−02 125°C 1.0E−02 85°C 1.0E−03 150°C 1.0E−01 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 1.0E−01 85°C 1.0E−03 1.0E−04 1.0E−04 TJ = 25°C 1.0E−05 10 20 30 TJ = 25°C 1.0E−05 40 50 60 1.0E−06 0 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current dc 7 6 20 30 40 VR, REVERSE VOLTAGE (V) 50 60 6 RqJC = 2.8°C/W 9 10 Figure 4. Maximum Reverse Current IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 10 8 0.2 0.4 0.6 0.8 1 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Forward Voltage 1.0E+00 1.0E−06 0 85°C 1 SQUARE WAVE 5 4 3 2 1 0 110 115 120 125 130 135 140 145 150 155 160 RqJA = 70°C/W 5 4 dc 3 SQUARE WAVE 2 1 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case per Leg MBR10L60CT Figure 6. Current Derating, Ambient per Leg MBR10L60CT http://onsemi.com 3 MBR10L60CT, MBRF10L60CT 6 RqJC = 5.7°C/W 9 IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 10 dc 8 7 6 SQUARE WAVE 5 4 3 2 1 0 80 90 100 110 120 130 140 TC, CASE TEMPERATURE (°C) 150 160 RqJA = 75°C/W 5 dc 4 3 2 SQUARE WAVE 1 0 0 R(t), TRANSIENT THERMAL RESISTANCE 8 140 160 10000 TJ = 150°C 7 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) Figure 8. Current Derating, Ambient per Leg MBRF10L60CT TJ = 25°C 6 5 C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (W) Figure 7. Current Derating, Case per Leg MBRF10L60CT 20 SQUARE WAVE 4 dc 3 2 1000 100 1 0 0 1 2 3 4 5 6 7 8 9 10 10 0 10 20 30 40 50 IO, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 9. Forward Power Dissipation Figure 10. Capacitance 60 10 D= 0.5 0.2 1 0.1 0.05 0.1 P(pk) 0.01 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Thermal Response Junction−to−Case for MBR10L60CT http://onsemi.com 4 100 1000 R(t), TRANSIENT THERMAL RESISTANCE MBR10L60CT, MBRF10L60CT 100 10 1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 10 100 1000 R(t), TRANSIENT THERMAL RESISTANCE Figure 12. Thermal Response Junction−to−Ambient for MBR10L60CT 10 D= 0.20.5 1 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 13. Thermal Response Junction−to−Case for MBRF10L60CT 100 D= 0.5 0.2 0.1 10 1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 PULSE TIME (sec) Figure 14. Thermal Response Junction−to−Ambient for MBRF10L60CT http://onsemi.com 5 100 1000 MBR10L60CT, MBRF10L60CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. http://onsemi.com 6 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR10L60CT, MBRF10L60CT PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE J −T− −B− F SEATING PLANE C S Q U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE FULLPAK and SWITCHMODE are trademarks of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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