ONSEMI MBR30H100CT

MBR30H100CT,
MBRF30H100CT
SWITCHMODE™
Power Rectifier
100 V, 30 A
http://onsemi.com
Features and Benefits
•
•
•
•
•
•
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
100 VOLTS
Low Forward Voltage: 0.67 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
Pb−Free Package is Available
1
2, 4
Applications
3
• Power Supply − Output Rectification
• Power Management
• Instrumentation
MARKING
DIAGRAM
4
Mechanical Characteristics:
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating:
Human Body Model = 3B
Machine Model = C
TO−220AB
CASE 221A
PLASTIC
1
2
AYWW
B30H100G
AKA
3
AYWW
B30H100G
AKA
MAXIMUM RATINGS
ISOLATED TO−220
CASE 221D
STYLE 3
Please See the Table on the Following Page
1
2
3
A
Y
WW
B30H100
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 4
1
Publication Order Number:
MBR30H100CT/D
MBR30H100CT, MBRF30H100CT
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(TC = 156°C)
Per Diode
Per Device
IF(AV)
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 151°C)
IFM
30
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
250
A
Operating Junction Temperature (Note 1)
TJ
+175
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
WAVAL
200
mJ
> 400
> 8000
V
Controlled Avalanche Energy (see test conditions in Figures 13 and 14)
A
15
30
ESD Ratings: Machine Model = C
Human Body Model = 3B
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
(MBR30H100CT)
(MBRF30H100CT)
Symbol
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
− Junction−to−Ambient
Value
2.0
60
4.2
75
RqJC
RqJA
RqJC
RqJA
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 15 A, TJ = 25°C)
(iF = 15 A, TJ = 125°C)
(iF = 30 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ = 125°C)
(Rated DC Voltage, TJ = 25°C)
iR
Min
Typ
Max
−
−
−
−
0.76
0.64
0.88
0.76
0.80
0.67
0.93
0.80
−
−
1.1
0.0008
6.0
0.0045
V
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
DEVICE ORDERING INFORMATION
Package Type
Shipping†
TO−220
50 Units / Rail
MBR30H100CTG
TO−220
(Pb−Free)
50 Units / Rail
MBRF30H100CTG
TO−220FP
(Pb−Free)
50 Units / Rail
Device Order Number
MBR30H100CT
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2
Unit
i , INSTANTANEOUS FORWARD CURRENT (AMPS
F
i , INSTANTANEOUS FORWARD CURRENT (AMPS
F
MBR30H100CT, MBRF30H100CT
100
175°C
10
TJ = 150°C
1.0
125°C
25°C
0.1
0.0
0.2
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
100
175°C
10
TJ = 150°C
1.0
125°C
0.1
0.0
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
IR, MAXIMUM REVERSE CURRENT (AMPS)
TJ = 150°C
1E−03
1E−03
TJ = 125°C
1E−04
0.7
0.8
0.9
1.0
1.1
TJ = 125°C
1E−04
1E−05
1E−05
1E−06
TJ = 25°C
1E−06
TJ = 25°C
1E−07
1E−07
40
20
60
80
100
1E−08
0
60
80
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
, AVERAGE FORWARD CURRENT (AMPS)
VR, REVERSE VOLTAGE (VOLTS)
dc
SQUARE WAVE
135
40
20
VR, REVERSE VOLTAGE (VOLTS)
F (AV)
, AVERAGE FORWARD CURRENT (AMPS)
0.6
TJ = 150°C
1E−02
140
145
150
155
160
165
170
175
I
IR, REVERSE CURRENT (AMPS)
1E−02
F (AV)
0.5
1E−01
1E−08
0
I
0.4
Figure 2. Maximum Forward Voltage
1E−01
4.0
2.0
0
130
0.3
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
26
24
22
20
18
16
14
12
10
8.0
6.0
25°C
0.2
0.1
180
26
24
22
20
18
16
14
12
10
8.0
6.0
4.0
2.0
0
RATED VOLTAGE APPLIED
RqJA = 16° C/W
RqJA = 60° C/W
(NO HEATSINK)
dc
SQUARE WAVE
dc
0
TC, CASE TEMPERATURE (C°)
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Case Per Leg
Figure 6. Current Derating, Ambient Per Leg
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3
100
175
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
10000
TJ = 25°C
TJ = 175°C
SQUARE WAVE
C, CAPACITANCE (pF)
P
, AVERAGE FORWARD POWER DISSIPATION (WATTS
F (AV)
MBR30H100CT, MBRF30H100CT
dc
1000
100
10
0
4
2
6
8
10 12 14 16 18 20 22 24 26 28 30
0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
80
60
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Forward Power Dissipation
R(t), TRANSIENT THERMAL RESISTANCE
40
20
Figure 8. Capacitance
100
D = 0.5
10
0.2
0.1
1
0.05
P(pk)
0.01
t1
0.1
t2
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
DUTY CYCLE, D = t1/t2
0.001
0.1
0.01
1
10
100
1000
t1, TIME (sec)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 9. Thermal Response Junction−to−Ambient for MBR30H100CT
10
1
D = 0.5
0.2
0.1
0.05
P(pk)
0.1
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
t1, TIME (sec)
Figure 10. Thermal Response Junction−to−Case for MBR30H100CT
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4
100
1000
R(t), TRANSIENT THERMAL RESISTANCE
MBR30H100CT, MBRF30H100CT
10
D = 0.5
1.0
0.1
0.2
0.1
0.05
0.02
P(pk)
0.01
0.01
t1
SINGLE PULSE
0.001
0.000001
0.00001
t2
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.1
0.01
1.0
ZqJC(t) = r(t) RqJC
RqJC = 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
10
100
1000
t1, TIME (sec)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 11. Thermal Response Junction−to−Case for MBRF30H100CT
100
10
D = 0.5
0.2
0.1
0.05
0.02
1.0
0.01
P(pk)
0.1
0.01
0.001
0.000001
t1
SINGLE PULSE
0.00001
t2
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.01
0.1
1.0
ZqJC(t) = r(t) RqJC
RqJC = 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
10
t1, TIME (sec)
Figure 12. Thermal Response Junction−to−Ambient for MBRF30H100CT
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5
100
1000
MBR30H100CT, MBRF30H100CT
+VDD
IL
10 mH COIL
BVDUT
VD
MERCURY
SWITCH
ID
ID
IL
DUT
S1
VDD
t0
Figure 13. Test Circuit
t1
t2
t
Figure 14. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
The unclamped inductive switching circuit shown in
Figure 13 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
EQUATION (1):
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
V
BV
DUT DD
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
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6
Ǔ
MBR30H100CT, MBRF30H100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
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7
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MBR30H100CT, MBRF30H100CT
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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Phone: 81−3−5773−3850
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8
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Sales Representative
MBR30H100CT/D