MJD29/29C MJD29/29C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP29 and TIP29C D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : MJD29 : MJD29C 40 100 V V Collector-Emitter Voltage : MJD29 : MJD29C 40 100 V V V Collector-Base Voltage VEBO Emitter-Base Voltage 5 IC Collector Current (DC) 1 A ICP Collector Current (Pulse) 3 A IB Base Current 0.4 A PC Collector Dissipation (TC=25°C) 15 W Collector Dissipation (Ta=25°C) 1.56 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO ICES Parameter *Collector-Emitter Sustaining Voltage : MJD29 : MJD29C Test Condition IC = 30mA, IB = 0 Min. Max. 40 100 Units V V Collector Cut-off Current : MJD29 : MJD29C VCE = 40V, IB = 0 VCE = 60V, IB = 0 50 50 µA µA : MJD29 : MJD29C VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 20 20 µA µA 1 mA Collector Cut-off Current IEBO Emitter Cut-off Current VBE = 5V, IC = 0 hFE *DC Current Gain VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A VCE(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 125mA 0.7 V VBE(on) *Base-Emitter ON Voltage VCE = 4A, IC = 1A 1.3 V fT Current Gain Bandwidth Product VCE = 10V, IC = 200mA 40 15 3 75 MHz * Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2% ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD29/29C Typical Characteristics 10 1000 IC=10IB tF, tSTG,[µs],TURN OFF TIME hFE, DC CURRENT GAIN VCE = 2V 100 10 1 0.01 0.1 1 tSTG 1 tF, VCC=30V tF, VCC=10V 0.1 0.01 0.01 10 IC[A], COLLECTOR CURRENT 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Turn On Time 10 100 tR, VCC=30V tR, VCC=10V 0.1 tD, VBE(off)=2V 10 10 1m 1 50 s 0µ s 0µ s DC 0.1 MJD29C 1 MJD29 IC[A], COLLECTOR CURRENT tR, tD[µs],TURN ON TIME IC=10IB 0.01 0.01 0.01 0.1 1 10 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Turn Off Time Figure 4. Safe Operating Area PC[W], POWER DISSIPATION 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD29/29C Package Demensions D-PAK 0.50 ±0.10 MIN0.55 0.91 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (2XR0.25) (1.00) (3.05) 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.70) 2.30 ±0.20 (0.90) 6.10 ±0.20 2.30 ±0.10 (0.10) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 9.50 ±0.30 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3