ONSEMI 2N3442

2N3442
2N4347
HIGH POWER INDUSTRIAL TRANSISTORS
NPN silicon transistors designed for applications in industrial and commercial equipment including high
fidelity audio amplifiers, series and shunts regulators and power switches.
• Low Collector-Emitter Saturation Voltage –
VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347
• Collector-Emitter Sustaining VoltageVCEO(sus) = 120 Vdc (Min) – 2N4347
140 Vdc (Min) – 2N3442
• Excellent Second-Breakdown Capability
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
#Collector-Emitter Voltage
VCB
Collector-Base Voltage
VEB
Emitter-Base Voltage
Continuous
IC
Collector Current
Peak
Continuous
IB
Base Current
Peak
Total Device Dissipation
PD
TJ
TS
@ TC = 25°
Derate
above 25°
Junction Temperature
Storage Temperature
Value
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
120
140
140
160
7.0
5.0
10
10
15 (**)
3.0
7.0
8.0
100
117
0.57
0.67
Unit
V
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
-65 to +200
°C
(**) This data guaranteed in addition to JEDEC registered data.
COMSET SEMICONDUCTORS
1/3
2N3442
2N4347
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
2N4347
2N3442
Value
Unit
1.75
1.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO(SUS)
Collector-Emitter
Sustaining Voltage (1)
VCER(SUS)
RBE=100Ω
Ω
Collector-Emitter
Sustaining Voltage
ICEO
Min Typ Mx Unit
Test Condition(s)
2N4347 120
-
-
2N3442 140
-
-
IC=0.1 Adc
2N4347 130
-
-
IC=0.2 Adc
2N3442 150
-
-
VCE=100 Vdc, IB=0
2N4347
-
200
VCE=140 Vdc, IB=0
2N3442
Vdc
IC=200 mAdc, IB=0
V
Collector-Emitter Current
mAdc
ICEX
VCE=120 Vdc, VEB(off)=1.5 Vdc,
TC = 150°C
10
mAdc
-
5.0
-
-
30
-
-
5.0
15
-
60
IC=5.0 Adc, VCE=4.0 Vdc
10
-
-
IC=3.0 Adc, VCE=4.0 Vdc
20
-
70
4.0
-
-
-
-
1.0
2.0
1.0
5.0
VBE=7.0 Vdc, IC=0
2N3442
2N4347
2N3442
IC=2.0 Adc, VCE=4.0 Vdc
2N4347
hFE
DC Current Gain
2N3442
IC=2.0 Adc, IB=200 mAdc
Collector-Emitter
saturation Voltage
mAdc
IC=10 Adc, VCE=4.0 Vdc
VCE(SAT)
2.0
-
VCE=140 Vdc, VEB(off)=1.5 Vdc,
TC = 150°C
Emitter Cutoff Current
-
2N4347
VCE=140 Vdc, VEB(off)=1.5 Vdc
IEBO
200
-
VCE=125 Vdc, VEB(off)=1.5 Vdc
Collector Cutoff Current
-
IC=5.0 Adc, IB=0.63 Adc
IC=3.0 Adc, IB=0.3 Adc
IC=10 Adc, IB=0.2 Adc
COMSET SEMICONDUCTORS
2N4347
2N3442
2/3
Vdc
2N3442
2N4347
Symbol
Ratings
Base-Emitter Voltage
VBE(on)
Small Signal Current Gain
hfe
Current Gain – Bandwith
Product (2)
fT
Second Breakdown
Collector Current
Is/b
Min Typ Mx Unit
Test Condition(s)
-
-
2.0
3.0
1.7
5.7
2N4347
40
-
-
2N3442
12
-
72
2N4347 200
-
-
2N3442
80
-
-
VCE=67 Vdc, IC=1.5 Adc
2N4347
1.0
-
-
VCE=78 Vdc, IC=1.5 Adc
2N3442
1.0
-
-
IC=2.0 Adc, VCE=4.0 Vdc
IC=5.0 Adc, VCE=4.0 Vdc
IC=3.0 Adc, VCE=4.0 Vdc
IC=10 Adc, VCE=4.0 Vdc
VCE=4.0 Vdc, IC=0.5 Adc, f=1.0
kHz
VCE=4.0 Vdc, IC=2.0 Adc, f=1.0
kHz
VCE=4.0 Vdc, IC=0.5 Adc, ftest =
50 kHz
VCE=4.0 Vdc, IC=2.0 Adc, ftest =
40 kHz
2N4347
2N3442
-
kHz
s
(1) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(2) fT = |hfe| * ftest
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
4,06
Vdc
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
0,77
0,04
0,16
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/3