2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Low Collector-Emitter Saturation Voltage – VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347 • Collector-Emitter Sustaining VoltageVCEO(sus) = 120 Vdc (Min) – 2N4347 140 Vdc (Min) – 2N3442 • Excellent Second-Breakdown Capability ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO #Collector-Emitter Voltage VCB Collector-Base Voltage VEB Emitter-Base Voltage Continuous IC Collector Current Peak Continuous IB Base Current Peak Total Device Dissipation PD TJ TS @ TC = 25° Derate above 25° Junction Temperature Storage Temperature Value 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 120 140 140 160 7.0 5.0 10 10 15 (**) 3.0 7.0 8.0 100 117 0.57 0.67 Unit V Vdc Vdc Adc Adc Watts W/°C °C -65 to +200 °C (**) This data guaranteed in addition to JEDEC registered data. COMSET SEMICONDUCTORS 1/3 2N3442 2N4347 THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case 2N4347 2N3442 Value Unit 1.75 1.5 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCEO(SUS) Collector-Emitter Sustaining Voltage (1) VCER(SUS) RBE=100Ω Ω Collector-Emitter Sustaining Voltage ICEO Min Typ Mx Unit Test Condition(s) 2N4347 120 - - 2N3442 140 - - IC=0.1 Adc 2N4347 130 - - IC=0.2 Adc 2N3442 150 - - VCE=100 Vdc, IB=0 2N4347 - 200 VCE=140 Vdc, IB=0 2N3442 Vdc IC=200 mAdc, IB=0 V Collector-Emitter Current mAdc ICEX VCE=120 Vdc, VEB(off)=1.5 Vdc, TC = 150°C 10 mAdc - 5.0 - - 30 - - 5.0 15 - 60 IC=5.0 Adc, VCE=4.0 Vdc 10 - - IC=3.0 Adc, VCE=4.0 Vdc 20 - 70 4.0 - - - - 1.0 2.0 1.0 5.0 VBE=7.0 Vdc, IC=0 2N3442 2N4347 2N3442 IC=2.0 Adc, VCE=4.0 Vdc 2N4347 hFE DC Current Gain 2N3442 IC=2.0 Adc, IB=200 mAdc Collector-Emitter saturation Voltage mAdc IC=10 Adc, VCE=4.0 Vdc VCE(SAT) 2.0 - VCE=140 Vdc, VEB(off)=1.5 Vdc, TC = 150°C Emitter Cutoff Current - 2N4347 VCE=140 Vdc, VEB(off)=1.5 Vdc IEBO 200 - VCE=125 Vdc, VEB(off)=1.5 Vdc Collector Cutoff Current - IC=5.0 Adc, IB=0.63 Adc IC=3.0 Adc, IB=0.3 Adc IC=10 Adc, IB=0.2 Adc COMSET SEMICONDUCTORS 2N4347 2N3442 2/3 Vdc 2N3442 2N4347 Symbol Ratings Base-Emitter Voltage VBE(on) Small Signal Current Gain hfe Current Gain – Bandwith Product (2) fT Second Breakdown Collector Current Is/b Min Typ Mx Unit Test Condition(s) - - 2.0 3.0 1.7 5.7 2N4347 40 - - 2N3442 12 - 72 2N4347 200 - - 2N3442 80 - - VCE=67 Vdc, IC=1.5 Adc 2N4347 1.0 - - VCE=78 Vdc, IC=1.5 Adc 2N3442 1.0 - - IC=2.0 Adc, VCE=4.0 Vdc IC=5.0 Adc, VCE=4.0 Vdc IC=3.0 Adc, VCE=4.0 Vdc IC=10 Adc, VCE=4.0 Vdc VCE=4.0 Vdc, IC=0.5 Adc, f=1.0 kHz VCE=4.0 Vdc, IC=2.0 Adc, f=1.0 kHz VCE=4.0 Vdc, IC=0.5 Adc, ftest = 50 kHz VCE=4.0 Vdc, IC=2.0 Adc, ftest = 40 kHz 2N4347 2N3442 - kHz s (1) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (2) fT = |hfe| * ftest MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 Vdc inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3