NPN BUX11 HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR The BUX11 is silicon multiepitaxial planar NPN transistors in Jedec TO-3. They are intended for use in switching and linear appications in military and industrial equipments. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX IC ICM IB Pt TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature IB = 0 IE = 0 IC = 0 VBE = -1.5V tp = 10ms @ TC = 25° Value Unit 200 250 7.0 250 20 25 4 150 200 -65 to +200 V V V V A A A Watts °C °C Value Unit 1.17 °C/W THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case COMSET SEMICONDUCTORS 1/3 NPN BUX11 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICEO Collector-Emitter Sustaining Voltage (1) Emitter-Base Breakdown Voltage (1) Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain (1) VCEO(SUS) VEB0(SUS) VCE(SAT) VBE(SAT) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) Symbol 200 - - V IC=0A , IE=50 mA 7 - - V VCE=160 V , IB=0A VCE= VCEX , VBE= -1.5V VCE= VCEX , VBE= -1.5V, Tcase = 125°C VEB=5.0 V, IC=0 - - 1.5 1.5 6 1 mA IC=12 A , IB=1.5 A 20 10 - 0.3 0.6 60 0.6 1.5 IC=12 A , IB=1.5 A - 1.3 1.5 IC=200 mA IC=6 A , VCE=2.0 V IC=12 A , VCE=4.0 V IC=6 A , IB=0.6 A Ratings Test Condition(s)Sec - - 12 - - VCE=15 V , IC=1 A , f=10 MHz 8 - - IC=12 A , IB=1.5 A , VCC=150 V - 0.3 1.0 - 1.2 1.8 - 0.24 0.4 VCE=30 V , ts = 1s VCE=140 V , ts = 1s fT ton Turn-on time ts Storage time tf File time ES/B Vclamp=200 V , L=500 µH IC=12 A , VCC=150 V IB1 = -IB2 =1.5 A (1) Pulse Duration = 300 µs, Duty Cycle <= 2% COMSET SEMICONDUCTORS mA - V Min Typ Mx Unit 5 0.15 Second breakdown collector current Clamped ES/B Collector current Transition frequency IS/B Min Typ Mx Unit 2/3 A MHz µs NPN BUX11 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D F G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 typ - Pin 1 : Pin 2 : Case : max 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3