COMSET BUX48

NPN BUX48
VERY HIGH VOLTAGE POWER TRANSISTOR
The BUX48 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.
They are a high voltage, high speed and they are intended for use in converters, inverter, switching
regulator, motor control systems.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCESM
VEBO
IC
ICM
IB
IBM
Pt
TJ
TStg
Ratings
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Base Current-Peak Value
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
VBE = 0
IC = 0
@ TC = 25°
Value
Unit
400
850
7.0
15
30
4
20
175
200
-65 to +200
V
V
V
A
A
A
A
Watts
°C
°C
Value
Unit
1.0
K/W
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
Ratings
Thermal Resistance, Junction to Mounting Base
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VEB0(SUS)
Collector-Emitter
Sustaining Voltage (1)
Emitter-Base Breakdown
Voltage (1)
ICER
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCEO(SUS)
*
Min Typ Mx Unit
400
-
-
V
IC=0A , IB=50 mA
7
-
30
V
VCE= VCESM= 850 V , RBE= 10 Ω
VCE= VCESM= 850 V , RBE= 10 Ω,Tj =125°C
VEB=5.0 V, IC=0
-
-
0.5
4
1
IC=200 mA , L=25 mH
COMSET SEMICONDUCTORS
1/2
mA
mA
NPN BUX48
Collector-Emitter
saturation Voltage (1)
Base-Emitter saturation
Voltage (1)
VCE(SAT)
VBE(SAT)
IC=15 A , IB=3 A
-
1.5
5
IC=10 A , IB=2 A
-
1.6
IC=10 A , IB=2 A
(1) Pulse Duration = 300 µs, Duty Cycle <= 2%
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
4,06
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
0,77
0,04
0,16
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
*
COMSET SEMICONDUCTORS
2/2
V