SGH23N60UF FEATURES N-CHANNEL IGBT TO-3P * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=12A) * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast C G E ABSOLUTE MAXIMUM RATINGS Rating Units Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ±20 V IC Collector Current @ Tc = 25°C 23 A Collector Current @ Tc = 100°C 12 A ICM (1) Pulsed Collector Current 92 A PC Maximum Power Dissipation @Tc = 25°C 100 W Maximum Power Dissipation @Tc = 100°C 40 W Symbol Characteristics VCES Tj Operating Junction Temperature -55 ~ 150 °C Tstg Storage Temperature Range -55 ~ 150 °C TL Maximum Lead Temp. For Soldering 300 °C Purposes, 1/8” from case for 5 seconds Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature Rev.B 1999 Fairchild Semiconductor Corporation N-CHANNEL IGBT SGH23N60UF ELECTRICAL CHARACTERISTICS (Tc=25°C,Unless Otherwise Specified) Symbol Characteristics Test Conditions Min Typ Max Units BVCES C - E Breakdown Voltage VGE = 0V , IC = 250uA 600 - - V ∆VCES/ Temperature Coeff. of VGE = 0V , IC = 1mA - 0.6 - V/°C ∆TJ Breakdown Voltage VGE(th) G - E threshold voltage IC = 12mA , VCE = VGE 4.0 5.5 7.5 V ICES Collector cutoff Current VCE = VCES , VGE = 0V - - 250 uA IGES G - E leakage Current VGE = VGES , VCE = 0V - - 100 nA VCE(sat) Collector to Emitter Ic=12A, VGE = 15V - 1.95 2.6 V saturation voltage Ic=23A, VGE = 15V - 2.6 - V Cies Input capacitance VGE = 0V , f = 1MHz - 720 - pF Coes Output capacitance VCE = 30V - 65 - pF Cres Reverse transfer capacitance - 26 - pF td(on) Turn on delay time VCC = 300V , IC = 12A - 12 - ns tr Turn on rise time VGE = 15V - 20 - ns td(off) Turn off delay time RG = 23Ω - 55 85 ns tf Turn off fall time Inductive Load - 100 220 ns Eon Turn on Switching Loss - 0.11 - mJ Eoff Turn off Switching Loss - 0.19 - mJ Ets Total Switching Loss - 0.3 0.5 mJ Qg Total Gate Charge Vcc = 300V - 48 72 nC Qge Gate-Emitter Charge VGE = 15V - 11 16 nC Qgc Gate-Collector Charge Ic = 12A - 14 21 nC Le Internal Emitter Inductance Measured 5mm from PKG - 7.5 - nH SGH23N60UF N-CHANNEL IGBT THERMAL RESISTANCE Symbol Characteristics Min Typ Max Units RθJC Junction-to-Case - - 1.2 °C/W RθJA Junction-to-Case - - 40 °C/W RθCS Case-to-Sink - 0.24 - °C/W N-CHANNEL IGBT SGH23N60UF 20 100 Vcc = 300V Load Current : peak of square wave 80 & 15 & 60 Tc = 100 Ic [A] Load Current [A] Tc = 25 10 40 5 20 Duty cycle : 50% Tc = 100 Power Dissipation = 21W & 0 0.1 0 1 10 100 1000 0 2 4 Fig.1 Typical Load Current vs. Frequency 30 6 8 10 Vce [V] Frequency [kHz] Fig.2 Typical Output Characteristics 3.2 Vge = 15V 3.0 Ic = 23A 25 2.8 2.6 Vce(sat) [V] Max DC Current [A] 20 15 2.4 2.2 10 Ic = 12A 2.0 5 1.8 1.6 0 25 50 75 &] 100 125 Tc [ Fig.3 Maximum Collector Current vs. Case Temperature 150 20 40 60 80 &] 100 120 140 Tc [ Fig.4 Collector to Emitter Voltage vs. Case Temperature N-CHANNEL IGBT SGH23N60UF T hermal Response [Zthjc] 10 1 0 .5 0 .2 0 .1 Pdm 0 .1 0 .0 5 t1 t2 0 .0 2 0 .0 1 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + Tc s ingle puls e 0 .0 1 0 .0 0 0 0 1 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 Rectangular Pulse Duration [sec] Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case 18 1200 Vcc = 300V Ic = 12A 16 1000 14 12 Cies VGE [V] Capacitance [pF] 800 600 10 8 6 400 4 200 Coes 2 Cres 0 0 1 10 Vce [V] Fig.6 Typical Capacitance vs. Collector to Emitter Voltage 0 10 20 30 Qg [nC] Fig.7 Typical Gate Charge vs. Gate to Emitter Voltage 40 N-CHANNEL IGBT SGH23N60UF 700 1.4 Vcc = 300V Rg = 23Ω Vge = 15V Esw 600 1.2 500 1.0 Eon 400 Energy [mJ] Energy [uJ] Vcc = 300V Ic = 12A 300 Eoff Ic =24A 0.8 0.6 Ic = 12A 200 0.4 100 0.2 Ic = 6A 0 0 40 80 0.0 +] 120 160 200 20 &] 40 60 Rg [ 80 100 Tc [ Fig.9 Typical Switching Loss vs. Case Temperature Fig.8 Typical Switching Loss vs. Gate Resistance 1.2 Vcc = 300V Rg =23Ω Tc = 100 Esw & 1.0 100 Eoff Ic [A] Energy [mJ] 0.8 0.6 10 Eon 0.4 0.2 & Safe Operating Area Vge = 20V, Tc = 100 0.0 1 4 8 12 16 20 Ic [A] Fig.10 Typical Switching loss vs. Collector to Emitter Current 24 1 10 100 Vce [V] Fig.11 Turn-off SOA 1000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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