FAIRCHILD SGH23N60UF

SGH23N60UF
FEATURES
N-CHANNEL IGBT
TO-3P
* High Speed Switching
* Low Saturation Voltage
: VCE(sat) = 1.95 V (@ Ic=12A)
* High Input Impedance
APPLICATIONS
* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast
C
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Units
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
±20
V
IC
Collector Current @ Tc = 25°C
23
A
Collector Current @ Tc = 100°C
12
A
ICM (1)
Pulsed Collector Current
92
A
PC
Maximum Power Dissipation @Tc = 25°C
100
W
Maximum Power Dissipation @Tc = 100°C
40
W
Symbol
Characteristics
VCES
Tj
Operating Junction Temperature
-55 ~ 150
°C
Tstg
Storage Temperature Range
-55 ~ 150
°C
TL
Maximum Lead Temp. For Soldering
300
°C
Purposes, 1/8” from case for 5 seconds
Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature
Rev.B
1999 Fairchild Semiconductor Corporation
N-CHANNEL IGBT
SGH23N60UF
ELECTRICAL CHARACTERISTICS
(Tc=25°C,Unless Otherwise Specified)
Symbol
Characteristics
Test Conditions
Min
Typ Max
Units
BVCES
C - E Breakdown Voltage
VGE = 0V , IC = 250uA
600
-
-
V
∆VCES/
Temperature Coeff. of
VGE = 0V , IC = 1mA
-
0.6
-
V/°C
∆TJ
Breakdown Voltage
VGE(th)
G - E threshold voltage
IC = 12mA , VCE = VGE
4.0
5.5
7.5
V
ICES
Collector cutoff Current
VCE = VCES , VGE = 0V
-
-
250
uA
IGES
G - E leakage Current
VGE = VGES , VCE = 0V
-
-
100
nA
VCE(sat)
Collector to Emitter
Ic=12A, VGE = 15V
-
1.95
2.6
V
saturation voltage
Ic=23A, VGE = 15V
-
2.6
-
V
Cies
Input capacitance
VGE = 0V , f = 1MHz
-
720
-
pF
Coes
Output capacitance
VCE = 30V
-
65
-
pF
Cres
Reverse transfer capacitance
-
26
-
pF
td(on)
Turn on delay time
VCC = 300V , IC = 12A
-
12
-
ns
tr
Turn on rise time
VGE = 15V
-
20
-
ns
td(off)
Turn off delay time
RG = 23Ω
-
55
85
ns
tf
Turn off fall time
Inductive Load
-
100
220
ns
Eon
Turn on Switching Loss
-
0.11
-
mJ
Eoff
Turn off Switching Loss
-
0.19
-
mJ
Ets
Total Switching Loss
-
0.3
0.5
mJ
Qg
Total Gate Charge
Vcc = 300V
-
48
72
nC
Qge
Gate-Emitter Charge
VGE = 15V
-
11
16
nC
Qgc
Gate-Collector Charge
Ic = 12A
-
14
21
nC
Le
Internal Emitter Inductance
Measured 5mm from PKG
-
7.5
-
nH
SGH23N60UF
N-CHANNEL IGBT
THERMAL RESISTANCE
Symbol
Characteristics
Min
Typ
Max
Units
RθJC
Junction-to-Case
-
-
1.2
°C/W
RθJA
Junction-to-Case
-
-
40
°C/W
RθCS
Case-to-Sink
-
0.24
-
°C/W
N-CHANNEL IGBT
SGH23N60UF
20
100
Vcc = 300V
Load Current : peak of square wave
80
&
15
&
60
Tc = 100
Ic [A]
Load Current [A]
Tc = 25
10
40
5
20
Duty cycle : 50%
Tc = 100
Power Dissipation = 21W
&
0
0.1
0
1
10
100
1000
0
2
4
Fig.1 Typical Load Current vs. Frequency
30
6
8
10
Vce [V]
Frequency [kHz]
Fig.2 Typical Output Characteristics
3.2
Vge = 15V
3.0
Ic = 23A
25
2.8
2.6
Vce(sat) [V]
Max DC Current [A]
20
15
2.4
2.2
10
Ic = 12A
2.0
5
1.8
1.6
0
25
50
75
&]
100
125
Tc [
Fig.3 Maximum Collector Current vs.
Case Temperature
150
20
40
60
80
&]
100
120
140
Tc [
Fig.4 Collector to Emitter Voltage vs.
Case Temperature
N-CHANNEL IGBT
SGH23N60UF
T hermal Response [Zthjc]
10
1
0 .5
0 .2
0 .1
Pdm
0 .1
0 .0 5
t1
t2
0 .0 2
0 .0 1
Duty factor D = t1 / t2
Peak Tj = Pdm x Zthjc + Tc
s ingle puls e
0 .0 1
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
Rectangular Pulse Duration [sec]
Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case
18
1200
Vcc = 300V
Ic = 12A
16
1000
14
12
Cies
VGE [V]
Capacitance [pF]
800
600
10
8
6
400
4
200
Coes
2
Cres
0
0
1
10
Vce [V]
Fig.6 Typical Capacitance vs.
Collector to Emitter Voltage
0
10
20
30
Qg [nC]
Fig.7 Typical Gate Charge vs.
Gate to Emitter Voltage
40
N-CHANNEL IGBT
SGH23N60UF
700
1.4
Vcc = 300V
Rg = 23Ω
Vge = 15V
Esw
600
1.2
500
1.0
Eon
400
Energy [mJ]
Energy [uJ]
Vcc = 300V
Ic = 12A
300
Eoff
Ic =24A
0.8
0.6
Ic = 12A
200
0.4
100
0.2
Ic = 6A
0
0
40
80
0.0
+]
120
160
200
20
&]
40
60
Rg [
80
100
Tc [
Fig.9 Typical Switching Loss vs.
Case Temperature
Fig.8 Typical Switching Loss vs.
Gate Resistance
1.2
Vcc = 300V
Rg =23Ω
Tc = 100
Esw
&
1.0
100
Eoff
Ic [A]
Energy [mJ]
0.8
0.6
10
Eon
0.4
0.2
&
Safe Operating Area
Vge = 20V, Tc = 100
0.0
1
4
8
12
16
20
Ic [A]
Fig.10 Typical Switching loss vs.
Collector to Emitter Current
24
1
10
100
Vce [V]
Fig.11 Turn-off SOA
1000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEXTM
CoolFETTM
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FAST
FASTrTM
GTOTM
HiSeCTM
ISOPLANAR TM
MICROWIRETM
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PowerTrenchTM
QSTM
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can be
systems which, (a) are intended for surgical implant
reasonably expected to cause the failure of the life support
into the body, or (b) support or sustain life, or © whose
device or system, or to affect its safety or effectiveness.
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
LIFE SUPPORT POLICY
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without
notice.
Preliminary
First Production
This datasheet contains preliminary data, and supplementary data
will be published at a later data.
Fairchild Semiconductor reserves the right to make changes at any
time without notices in order to improve design.
No Identification Needed
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This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice in
order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.