FGPF120N30 300V, 120A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential. High Current Capability Low saturation voltage : VCE(sat) = 1.1 V @ IC = 25A High input impedance Fast switching Application PDP SYSTEM C G TO-220F 1.Gate 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol VCES VGES IC IC_pulse (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulse Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 25°C @ TC = 25°C @ TC = 100°C FGPF120N30 300 ± 20 120 180 * 60 24 -55 to +150 -55 to +150 Units V V A A W W °C °C 300 °C Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --- Max. 2.1 62.5 Units °C/W °C/W Notes (1) Repetitive test , pulse width=100usec , Duty=0.5 * Ic_pulse limited by max Tj ©2006 Fairchild Semiconductor Corporation FGPF120N30 Rev. A 1 www.fairchildsemi.com FGPF120N30 300V, 120A PDP IGBT January 2006 Device Marking Device Package Packaging Type FGPF120N30 FGPF120N30TU TO-220F Rail / Tube Electrical Characteristics Symbol Qty per Tube 50ea Max Qty per Box - TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250uA 300 -- -- V VGE = 0V, IC = 250uA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 100 ± 250 uA nA 2.5 -- 4.0 1.1 5.0 1.4 V V -- 1.9 -- V -- 2.1 -- V ---- 2190 310 98 ---- pF pF pF ------------ 35 140 120 140 35 140 130 280 112 14 50 ---350 ----168 21 75 ns ns ns ns ns ns ns ns nC nC nC Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC = 25A, VGE = 15V IC = 120A, VGE = 15V TC = 25°C IC = 120 A, VGE = 15V TC = 125°C Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge FGPF120N30 Rev. A VCC = 200 V, IC = 25A, RG = 8.7Ω, VGE = 15V, Resistive Load, TC = 25°C VCC = 200 V, IC = 25 A, RG = 8.7Ω, VGE = 15V, Resistive Load, TC = 125°C VCE = 200 V, IC =25A, VGE = 15V 2 www.fairchildsemi.com FGPF120N30 300V, 120A PDP IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 120 20V Figure 2. Typical Output Characteristics 120 o 15V 100 o T C = 125 C 20V T C = 25 C 15V 100 12V 10V Collector Current, IC [A] Collector Current, IC [A] 12V 10V 80 8V 60 40 80 8V 60 40 20 20 V GE = 6V V GE= 6V 0 0 0 0 1 2 3 4 5 1 6 Collector-Emitter Voltage, V CE [V] Figure 3 Typical Saturation Voltage Characteristics Tc = 25 C o Tc = 125 C Collector Current, IC [A] Collector Current, IC [A] 5 6 100 o 80 60 40 80 60 o 125 C 40 o 25 C 20 20 0 0 0 1 2 0 3 2 4 6 8 Figure 5. Saturation Voltage vs Case Temperature at Variant Current Level 12 Figure 6. Saturation Voltage vs. Vge 2.2 6 C om m on E m itter o TC = 25 C 120A [V] 2.0 10 G ate -E m itte r V olta ge, V G E [V ] C o llector-E m itte r V o lta ge , V C E [V ] 5 CE 1.8 Collector - Emitter Voltage, V Collector-Emitter Voltage, VCE [V] 4 V CE = 2 0 V C o m m o n E m itter V Ge = 1 5 V 100 3 Figure 4. Transfer Characteristics 120 120 2 C ollector-E m itter V oltage, V C E [V ] 1.6 1.4 50A 1.2 25A 1.0 I c = 12.5A 0.8 0.6 0 25 50 75 100 125 3 120A 50A 2 25A 1 12.5A 0 150 6 o 8 10 12 14 16 18 20 G ate - E m itter V oltage, V G E [V ] C ase Tem perature, T C ( C ) FGPF120N30 Rev. A 4 3 www.fairchildsemi.com FGPF120N30 300V, 120A PDP IGBT Typical Performance Characteristics C o m m o n E m itte r o TC = 125 C Cies 5 Capacitance [pF] Collector - Emitter Voltage, V CE [V] 6 Figure 8. Capacitance Characteristics 4 3 120A 2 1000 Coes Cres 50A 25A 100 1 Com m on Em itter V GE = 0V, f = 1M Hz 1 2 .5 A o T C = 25 C 0 6 8 10 12 14 16 18 0 20 5 10 Figure 9. Gate Charge 15 20 25 30 Figure 10. SOA Characteristics C o m m o n E m itte r RL = 10 ohm o TC = 25 C * 100 Ic M A X (P u ls e d ) Ic M A X (C o n tin u o u s ) 50µs 10 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 15 C ollector-Emitter Voltage, V CE [V] G a te - E m itter V oltage, V G E [V ] Vcc = 200V 5 0 0 20 40 60 80 100 100µs 1m s 10 D C O p e ra tio n 1 S in g le N o n re p e titiv e o P u ls e T c = 2 5 C C u rv e s m u s t b e d e ra te d lin e a rly w ith in c re a s e in te m p e ra tu re 0 .1 120 0 .1 1 G ate C harge, Q g [nC ] 10 100 1000 C o lle c to r - E m itte r V o lta g e , V C E [V ] Figure 11. Turn-On Characteristics vs. Gate Resistance Figure 12. Turn-Off Characteristics Gate Resistance 1000 Com m on Em itter V C C = 200V, V GE = 15V Com m on Em itter V C C = 200V, V GE = 15V I C = 25A o T C = 25 C I C = 25A 1000 o T C = 25 C o o tr T C = 125 C Switching Time [ns] Switching Time [ns] T C = 125 C 100 td(on) tf tf 100 td(off) 10 1 10 100 1 FGPF120N30 Rev. A 10 100 Gate Resistance, R G [Ω ] Gate Resistance, R G [Ω ] 4 www.fairchildsemi.com FGPF120N30 300V, 120A PDP IGBT Figure 7. Saturation Voltage vs. Vge Figure 14. Turn-Off Characteristics vs. Collector Current 1000 1000 Com m on Em itter V GE = 15V, R G = 10 Ω o T C = 25 C tf o Switching Time [ns] Switching Time [ns] T C = 125 C 100 tr tf 100 td(off) Com m on Em itter V GE = 15V, R G = 8.7 Ω td(on) o T C = 25 C o 10 10 10 100 T C = 125 C 10 C ollector Current , Ic [A] 100 Collector Current , Ic [A] Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current 1000 1000 100 Switching Loss [uJ] Switching Loss [uJ] Eoff Eon Com m on Em itter V CC = 200V, V GE = 15V IC = 25A Eoff 100 Eoff Com m on Em itter V GE = 15V, R G = 8.7 Ω Eon o T C = 25 C o T C = 25 C o T C = 125 C 10 1 o 10 T C = 125 C 10 100 10 Gate Resistance, R G [Ω ] 100 Collector Current , Ic [A] Figure 17. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 1 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 Pdm s in g le p u ls e t1 0 .0 1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1 E -3 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e c ta n g u la r P u ls e D u r a tio n [s e c ] FGPF120N30 Rev. A 5 www.fairchildsemi.com FGPF120N30 300V, 120A PDP IGBT Figure 13 Turn-On Characteristics vs. Collector Current TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 FGPF120N30 Rev. A +0.10 0.50 –0.05 4.70 ±0.20 0.35 ±0.10 6 www.fairchildsemi.com FGPF120N30 300V, 120A PDP IGBT Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 7 FGPF120N30 Rev. A www.fairchildsemi.com FGPF120N30 300V, 120A PDP IGBT TRADEMARKS