INFRA-RED Item No.: 126244 1. This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed) 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy p-Electrode p-Epitaxy GaAlAs 160 typ. 120 365 Active Layer n-Epitaxy GaAlAs n-Electrode 365 Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Symbol Conditions Forward voltage Parameter VF IF = 20 mA Reverse voltage VR IR = 10 µA 5 output Power Φe IF = 20 mA IF = 50 mA IF = 20 mA 2,6 6,5 Switching time tr, tf min Peak wavelength λP IF = 20 mA Power measurement at OSA on gold plate 5. typ max Unit 1,30 1,50 V V 3,0 7,5 20 870 mW ns nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]